Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 3182 Search Results

    TRANSISTOR 3182 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3182 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222 PDF

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR PDF

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A PDF

    MCP73861

    Abstract: MCP73862 MCP7386X MO-220
    Text: MCP73861/2 Advanced Single or Dual Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers - Integrated Pass Transistor - Integrated Current Sense - Reverse-Blocking Protection


    Original     		MCP73861/2 MCP73861 MCP73862 D-85737 NL-5152 DS21893A-page MCP73861 MCP73862 MCP7386X MO-220 PDF

    2sA1766

    Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
    Text: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.


    Original     		ENN3182B 2SA1766 2SA1766] 25max 2sA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al PDF

    MCP604 pt100 amplifier

    Abstract: pt100 sensor interface WITH ADC "Current to Voltage Converter" pt100 adc microchip mcp602 pt100 jim Williams MCP602 adjustable CMOS Buffer Amplifier amplifier application circuit amplifiers made in korea
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


    Original     		AN682 DS00682C-page MCP604 pt100 amplifier pt100 sensor interface WITH ADC "Current to Voltage Converter" pt100 adc microchip mcp602 pt100 jim Williams MCP602 adjustable CMOS Buffer Amplifier amplifier application circuit amplifiers made in korea PDF

    2sA1766

    Abstract: 31821 MARKING AL
    Text: Ordering number:EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High DC current gain hFE=500 to 1200 . · Large current capacity.


    Original     		EN3182B 2SA1766 2SA1766] 2sA1766 31821 MARKING AL PDF

    MCP604 pt100 amplifier

    Abstract: jim Williams AN-699
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


    Original     		AN682 MCP604 pt100 amplifier jim Williams AN-699 PDF

    MCP604 pt100 amplifier

    Abstract: pt100 pic light follower using microcontroller tutorial operational amplifier rtd temperature instrumentation amplifier circuit Thomas M Frederiksen AN723 pt100 adc microchip 200B AN682
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


    Original     		AN682 D-81739 MCP604 pt100 amplifier pt100 pic light follower using microcontroller tutorial operational amplifier rtd temperature instrumentation amplifier circuit Thomas M Frederiksen AN723 pt100 adc microchip 200B AN682 PDF

    2SA1766

    Abstract: ITR04527 marking al
    Text: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .


    Original     		2SA1766 EN3182C 2SA1766 ITR04527 marking al PDF

    Untitled

    Abstract: No abstract text available
    Text: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


    Original     		100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page PDF

    PNP marking NY sot-223

    Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
    Text: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


    Original     		100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page PNP marking NY sot-223 2N4403 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram PDF

    ZTX458

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX458 ISSUE 2 – MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		ZTX458 100ms ZTX458 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2SA1424

    Abstract: No abstract text available
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and


    OCR Scan     		NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 P lastic Medium Power Silicon NPN Transistor Ulotorola Prtfmrtd Otvtet . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS


    OCR Scan     		BD438 BD442. BD437 BD441 BD441 PDF

    Transistor B C 458

    Abstract: c458 2sa1766
    Text: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity


    OCR Scan     		3182B 250mm2 2SA1766 1200MO/6279MO Transistor B C 458 c458 2sa1766 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    2SC3544

    Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry


    OCR Scan     		NE944 2SC3544 2sc 792 lt 8232 CT 101 K 104 B 1206 PDF

    20W power transistor

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES: . Low Collector Saturation Voltage : VcE(sat)— l-OV(Typ.) (IC=-3A, IB=-0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		2SB906 2SD1221 68MAX. -50mA, 20W power transistor PDF

    ztx458

    Abstract: isoma
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX458 ISSUE 2 -M A R C H 1994_ FEATURES * 400 V olt VCE0 * 0.5 A m p continuous current * P.„.= 1 W att E E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		ZTX458 20MHz -10mA 300ns. ztx458 isoma PDF

    transistor c 3181

    Abstract: ML SOT23 TRANSISTOR 3182
    Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage


    OCR Scan     		650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182 PDF