transistor 342 G
Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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C67078-S3135-A2
transistor 342 G
buz 342 G
C67078-S3135-A2
transistor 342 pf
buz 342 transistor
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C67078-S3135-A2
Abstract: transistor 342 G BUZ342
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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O-218
C67078-S3135-A2
C67078-S3135-A2
transistor 342 G
BUZ342
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318F
Abstract: AN569 MMBT2131T1 MMBT2131T3
Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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MMBT2131T1
MMBT2131T3
MMBT2132T1/T3)
r14525
MMBT2131T1/D
318F
AN569
MMBT2131T1
MMBT2131T3
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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MMBT2132T1/T3)
MMBT2131T1
MMBT2131T3
AN569)
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bipolar junction transistor
Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
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MMBT2131T1/D
MMBT2131T1
MMBT2131T3
MMBT2132T1/T3)
bipolar junction transistor
motorola an569 thermal
MOTOROLA TRANSISTOR
318F
AN569
MMBT2131T1
MMBT2131T3
AN569 in Motorola Power Applications
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CGC SWITCH
Abstract: transistor 342 pf GA200SA60SP
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
CGC SWITCH
transistor 342 pf
GA200SA60SP
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value
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MMBT2131T1/T3)
MMBT2132T1
MMBT2132T3
AN569)
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GA200SA60SP
Abstract: GA200SA60S
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
11-Mar-11
GA200SA60SP
GA200SA60S
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GA200SA60SP
Abstract: smps tig welding transistor 342 G
Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
2002/95/EC
18-Jul-08
GA200SA60SP
smps tig welding
transistor 342 G
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Untitled
Abstract: No abstract text available
Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available
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VS-GA250SA60S
VS-GA200SA60SP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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MOTOROLA TRANSISTOR T2
Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
Text: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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MMBT2132T1/D
MMBT2132T1
MMBT2132T3
MMBT2131T1/T3)
MOTOROLA TRANSISTOR T2
motorola an569 thermal
motorola an569
MOTOROLA TRANSISTOR
TRANSISTOR MOTOROLA
318F
AN569
MMBT2132T1
MMBT2132T3
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Untitled
Abstract: No abstract text available
Text: b3E D 5bM220S GD0Da4S HAP 342 g7 MICROWAVE PULSED POWER TRANSISTOR PH1214-25L REV. NC 10/31/91 n/A-COfl P H M /A-COM PHI, INC. o DESIGN CHARACTERISTICS • • • • • 300 uS Pulse Operation Broadband 1.2 - 1 .4 GHz Operation Common Base Configuration
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5bM220S
PH1214-25L
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b342d
Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Text: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.
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Untitled
Abstract: No abstract text available
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol
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MMBT2131T1
MMBT2132T1/T3)
AN569)
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bd132
Abstract: transistor ALG 20
Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter
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BD132
OT-32
BD131.
bbS3T31
0D34251
BD131
BD132
bb53T31
transistor ALG 20
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J645
Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,
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2010B
UPB2010B
30dBc
130mA
100oC
175oC
J645
J626
transistor J626
ultrarf
UPB2010B
J626 Transistor
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ilpi -115
Abstract: ilpi - 003 3 phase igbt firing circuit for ac servo motor
Text: Make sure the next Card you purchase has. PWR-82340 and PWR-82342 SMART POWER H-BRIDGE MOTOR DRIVES FEATURES • Small Size 2.25” x 2.1” x 0.39” • 200 V and 500 V Capability • 30 A Current Capability • High-Efficiency MOSFET or IGBT Drive
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PWR-82340
PWR-82342
PWR-82342
M-1/10-0
ilpi -115
ilpi - 003
3 phase igbt firing circuit for ac servo motor
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.
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BUZ45A_
bb53T31
0014bS7
T-39-13
T-39-13
D014bST
BUZ45A
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318F
Abstract: AN569 MMBT2131T1
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value
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MMBT2131T1
MMBT2132T1/T3)
MMBT2131T1/D
318F
AN569
MMBT2131T1
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Untitled
Abstract: No abstract text available
Text: S C S T H O M S O N IM^làì 5 HHHCTIsì(5)lfflH(ei_AM82731 -003 RF & MICROW AVE TR A NSISTO R S S-BAND RADAR APPLICATIO NS . R EFR A C TO R Y/G O LD METALLIZATION . EM ITTER SITE BALLASTED • 10:1 VSW R CAPABILITY . LOW THERM AL RESISTANCE ■ IN P U T/O U TP U T IM PEDANCE M A TC HING
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AM82731
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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b53T31
003Db4S
O220AB
K455-100A/B
BUK455
-100A
-100B
BUK455-100A/B
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ZTX601B
Abstract: transistor 5k 180 watt lamp planar FXT601B DSA0037551
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX601B FOR GRAPHS
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FXT601B
ZTX601B
100mA,
20MHz
transistor 5k
180 watt lamp planar
FXT601B
DSA0037551
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super beta pnp transistors
Abstract: Automotive regulator
Text: Micrel Semiconductor Designing With LDO Regulators Section 8. Low-Dropout Voltage Regulator Glossary Dropout Voltage The minimum value of input-to-output voltage differential required by the regulator. Usually defined as the minimum additional voltage needed before the regulator's output voltage dips below its
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ht 25 transistor
Abstract: BUK638-500B
Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK638-500B
711DflSb
ODb431S
ht 25 transistor
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