TRANSISTOR 43B Search Results

TRANSISTOR 43B Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 43B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
AA1A4P Abstract: SC43B PA33 Text: NEC DESCRIPTION NPN SILICON TRANSISTOR AA1A4P The AA1A4P is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit. >c R t = 10 ki2	OCR Scan		PDF
lv 5682 Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837 Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically	OCR Scan	RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837	PDF
2SA1151 Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ \|V\| \| \|J ^• o 2SC2718 1=> yyui)/ > ?>	OCR Scan	2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;	OCR Scan	bbS3R31 bbS3R31 Q02RltlR 7Z88750	PDF
bi 370 transistor Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F9ÜcN P N i 1J 3 > F 5 >•$>;? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o	OCR Scan	CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j	PDF
J6 transistor Abstract: 2SD1513 PA33 2sb1068 2sb10681 Text: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o	OCR Scan	2SD1513 2SB10681 PWS10 J6 transistor 2SD1513 PA33 2sb1068	PDF
2SC3616 Abstract: PA33 ScansUX881 Text: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA	OCR Scan	2SC3616 PWS10 Cycled50 SC-43B 03---in-----in 000--i PA33 ScansUX881	PDF
221A-06 Abstract: AN569 MTP1N50 motorola 585 MOTOROLA N-Channel MOSFET 205 Mosfet MOTOROLA Text: bflE T> • MOTOROLA SC XSTRS/R F b3b72SH OCHflbSM 43b « H O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T T h is T M O S P o w e r FET is designed fo r high voltage, high speed	OCR Scan	3b72SH DDTflb24 MTP1N50 221A-06 AN569 MTP1N50 motorola 585 MOTOROLA N-Channel MOSFET 205 Mosfet MOTOROLA	PDF
Untitled Abstract: No abstract text available Text: KSR1010 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=10KQ) • Complement to KSR2010 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KSR1010 KSR2010	PDF
T2D 24 DIODE Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D	PDF
34B SOT Abstract: NDT455N Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is	OCR Scan	NDT455N NDT455N OT-223 34B SOT	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed	OCR Scan	3b72S4 CHflb24 MTP1N50 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02	PDF
BT 816 transistor Abstract: PA 1515 transistor 9921 transistor Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure	OCR Scan	BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
iw 1688 Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331 Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency	OCR Scan	GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331	PDF
STT 3 SIEMENS Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2 Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage	OCR Scan	O-218AA C67078-A3209-A2 fl23SbOS 6235b05 STT 3 SIEMENS TRANSISTOR 2FE ScansUX7	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent	PDF
Untitled Abstract: No abstract text available Text: b b S B ' m 0054443 STT « A P X Philips Semiconductors PNP general purpose transistor — BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j>— — — • MAX. UNIT -5 0 V -3 0 V PIN CONFIGURATION • High current • S- mini package.	OCR Scan	BC807W; BC808W OT323 MAM037 BC807-16W BC807-25W BC808W: BC808-16W	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IS S U E 1 - A P R IL 94 FEATURES * 200 Volt VCE0 * Gain of 250 at lc=0.3 Amps * Very low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V VCBO -200 Collector-Em itter Voltage	OCR Scan	0Q1Q354 001G35S	PDF
D403 power transistor Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor Text: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.	OCR Scan	2SB1344 2SD2025 2SB1344 2SD2025. 300kQ 100ms O-220FP O-220 O-126 O-220, D403 power transistor D403 transistor TRANSISTOR D403 D403 A 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor	PDF
169800 Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)	OCR Scan	NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb	PDF

TRANSISTOR 43B Search Results

TRANSISTOR 43B Result Highlights (5)

TRANSISTOR 43B Datasheets Context Search

MN1280

oz960

2N2222A 338

AA1A4P

lv 5682

2SA1151

Untitled

bi 370 transistor

J6 transistor

2SC3616

221A-06

Untitled

T2D 24 DIODE

34B SOT

Untitled

BT 816 transistor

JE1100

iw 1688

STT 3 SIEMENS

TIS43

Untitled

Untitled

D403 power transistor

169800