Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. C ・Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1
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KRA551F
KRA554F
KRA553F
KRA552F
KRA551F
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KRA551F
Abstract: KRA552F resistor 554f KRA553F KRA554F
Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.
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KRA551F
KRA554F
KRA553F
KRA552F
KRA551F
KRA552F
resistor 554f
KRA553F
KRA554F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.
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KRA551F
KRA554F
KRA553F
KRA552F
KRA551F
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KTC814U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20
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KTC814U
KTC814U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20
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KTC814U
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SMD transistor A1
Abstract: IC 2003 E001 G003 CHIP COIL siemens matsua smd transistor A1 4 PIN
Text: iC-WD SWITCH-MODE DUAL 5 V REGULATOR Rev A1, Page 1/12 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Input voltage 8 to 36 Vdc Highly efficient step-down regulator Switching transistor and free-wheeling diode integrated Adjustment of the regulator cut-off current with external
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D-55294
SMD transistor A1
IC 2003
E001
G003
CHIP COIL siemens matsua
smd transistor A1 4 PIN
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9V-12V DC INPUT
Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
Text: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data
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HBDM60V600W
OT-363
J-STD-020C
MIL-STD-202,
DS30701
9V-12V DC INPUT
IC marking code D3
CQ212
MMBD4448DW
case 202 transistor pinouts
MMBT2907A
MMBTA06
mbta06
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9V-12V DC INPUT
Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
Text: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data
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HBDM60V600W
OT-363
J-STD-020C
MIL-STD-202,
DS30701
9V-12V DC INPUT
sot-363 u4
IC marking code D3
MARKING R6 SOT-363
MMBT2907A
MMBTA06
hbdm60v600
U5A1
mmbd4448
MARKING HB01
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Untitled
Abstract: No abstract text available
Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N
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HBDM60V600W
MMBT2907A
MMBTA06
OT-363
J-STD-020D
MIL-STD-202,
DS30701
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case 202 transistor pinouts
Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1
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HBDM60V600W
MMBT2907A
MMBTA06
OT-363
J-STD-020D
DS30701
case 202 transistor pinouts
hbdm60v600
TRANSISTOR ARRAY
q2n* npn transistor
L 450 diod
TRANSISTOR ARRAY HBDM60V600W COMPLEX
J-STD-020D
mbta06
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J119 transistor
Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be
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SGA-8543Z
SGA-8543Z
EDS-102583
J119 transistor
bipolar transistor ghz s-parameter
140C
SiGe POWER TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can
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SGA-8543Z
SGA-8543Z
EDS-102583
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QM50DY-H
Abstract: transistor B A O 331
Text: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB . • Ic Collector c u rre n t. BOA • V cex C ollector-em itter v o lta g e 600V • hre DC current g a in . 750
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QM50DY-HB
E80276
E80271
QM50DY-H
transistor B A O 331
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GSA606-12
Abstract: GSA606 InGaP HBT Gain Block MARKING HBT DC9000 ATC520L103KT16T
Text: GSA606-12 InGaP HBT Gain Block Product Features Product Description ● DC to 7GHz Package The GSA606-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz
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GSA606-12
GSA606-12
28dBm
GSA606
InGaP HBT Gain Block
MARKING HBT
DC9000
ATC520L103KT16T
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Amplifier SOT-89 c4
Abstract: No abstract text available
Text: GSA503-89 InGaP HBT Gain Block Product Features Product Description ● DC to 3.5GHz Package The GSA503-89 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 3GHz frequency range with 20 dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz
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GSA503-89
GSA503-89
OT-89
Amplifier SOT-89 c4
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ATC520L103KT16T
Abstract: MARKING HBT GSA612-12
Text: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die
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GSA612-12
12GHz
GSA612-12
12GHz
ATC520L103KT16T
MARKING HBT
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GSA804-12
Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die
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GSA804-12
GSA804-12
s parameters 4ghz
4ghz s parameters transistor
4ghz transistor n
ATC520L103KT16
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GSA603-12
Abstract: GSA-603-12 gsa603
Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die
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GSA603-12
GSA603-12
GSA-603-12
gsa603
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ATC520L103KT16T
Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die
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GSA804-89
OT-89
GSA804-89
ATC520L103KT16T
Amplifier SOT-89 c4
s parameters 4ghz
ATC520L103KT16
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SGA8543Z-EVB2
Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
SGA8543Z-EVB2
marking code 85Z
SGA8543ZSQ
gm 88
140C
rfmd model marking code
PHEMT marking code B
Transistor code zl
HEMT marking P
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Untitled
Abstract: No abstract text available
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
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Untitled
Abstract: No abstract text available
Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin
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LX5512E
19dBm
64QAM,
54Mbps)
LX5512E
16-pin
11b/g
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Untitled
Abstract: No abstract text available
Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin
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LX5512E
45GHz
19dBm
130mA
19dBm
64QAM
54Mbps
LX5512E
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FP6700
Abstract: led tail light pwm dimming capacitor 22uf 450v FP6700SO sop16 pwm sop16 automotive SOP-16EP power factor correction buck topology FP6700-1 flyback led driver with pwm dimming
Text: FP6700 fitipower integrated technology lnc. Universal High Brightness LED Driver Description The FP6700 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs from voltage sources ranging from 8VDC up to 450VDC. The FP6700 controls an
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FP6700
FP6700
450VDC.
300kHz.
MS-012.
FP6700-1
2-JUN-2009
led tail light pwm dimming
capacitor 22uf 450v
FP6700SO
sop16 pwm
sop16 automotive
SOP-16EP
power factor correction buck topology
flyback led driver with pwm dimming
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