Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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2SC5551A
ENA1118A
300mA)
250mm2Ã
A1118-6/6
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A11182
Abstract: 2sc5551a A1118-4/4
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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ENA1118A
2SC5551A
300mA)
250mm2
A1118-6/6
A11182
2sc5551a
A1118-4/4
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IC 7419
Abstract: ic marking 4410 ic 4026
Text: 15GN03NA Ordering number : ENA1110 SANYO Semiconductors DATA SHEET 15GN03NA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications • VHF, RF, MIXER, OSC, IF amplifier. Features • • High cutoff frequency : fT=1.5GHz typ.
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15GN03NA
ENA1110
S21e2
A1110-6/6
IC 7419
ic marking 4410
ic 4026
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A1111
Abstract: No abstract text available
Text: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .
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ENA1111
55GN01CA
S21e2
A1111-6/6
A1111
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CRE 6203
Abstract: IC163 Transistor NP 3773
Text: 55GN01NA Ordering number : ENA1116 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01NA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =7dB typ f=1GHz .
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55GN01NA
ENA1116
S21e2
400MHz)
A1116-6/6
CRE 6203
IC163
Transistor NP 3773
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transistor A1111
Abstract: a1111 transistor npn Epitaxial Silicon zs 35 a1111 8 DATASHEET OF IC 741 1 307 329 082 IC 741 data sheet uA 741 IC data sheet 55GN01CA
Text: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .
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55GN01CA
ENA1111
S21e2
A1111-6/6
transistor A1111
a1111
transistor npn Epitaxial Silicon zs 35
a1111 8
DATASHEET OF IC 741
1 307 329 082
IC 741 data sheet
uA 741 IC data sheet
55GN01CA
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transistor A1111
Abstract: free ic 7404 transistor 5104 db
Text: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz
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ENA1111A
55GN01CA
S21e2
013A-009
SC-59,
O-236ement,
A1111-8/8
transistor A1111
free ic 7404
transistor 5104 db
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Untitled
Abstract: No abstract text available
Text: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz
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55GN01CA
ENA1111A
A1111-8/8
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2SC5551
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
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2SC5551A
ENA1118
300mA)
250mm20
A1118-4/4
2SC5551
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Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
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ENA1118
2SC5551A
300mA)
250mm20
A1118-4/4
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55GN01MA
Abstract: ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
Text: 55GN01MA Ordering number : ENA1114 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =10dB typ f=1GHz .
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55GN01MA
ENA1114
S21e2
250mm20
A1114-6/6
55GN01MA
ic 4518 applications
491 marking transistor
SANYO DC 303
temperature control IM 314 IM 304
zo 103 ma
A1114
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functions of ic 4528
Abstract: A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156
Text: 55GN01SA Ordering number : ENA1115 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA UHF Wide-band Low-noise Amplifier Applications Features • • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ f=1GHz .
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55GN01SA
ENA1115
S21e2
A1115-6/6
functions of ic 4528
A1115
TRANSISTOR 6019
transistor 7929
55GN01SA
A11156
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TLE 4984
Abstract: transistor mcp 6723
Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ f=1GHz
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ENA1114A
55GN01MA
S21e2
250mm2
023A-009
A1114-8/8
TLE 4984
transistor mcp 6723
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Untitled
Abstract: No abstract text available
Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ f=1GHz
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55GN01MA
ENA1114A
250mm2Ã
A1114-8/8
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IC 8256
Abstract: A1113
Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .
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ENA1113
55GN01FA
S21e2
400MHz)
A1113-8/8
IC 8256
A1113
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Untitled
Abstract: No abstract text available
Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TN2529
125pF
DSFP-TN2529
A111407
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transistor A1111
Abstract: IC-7404 A1111
Text: Ordering number : ENA1111A 55GN01CA RF Transistor http://onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1111A
55GN01CA
S21e2
A1111-8/8
transistor A1111
IC-7404
A1111
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55GN01FA-TL-H
Abstract: 7308 IC
Text: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz
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ENA1113A
55GN01FA
S21e2
400MHz)
A1113-9/9
55GN01FA-TL-H
7308 IC
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a1113
Abstract: application of ic 7489 55GN01FA
Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .
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55GN01FA
ENA1113
S21e2
400MHz)
A1113-8/8
a1113
application of ic 7489
55GN01FA
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TN1L
Abstract: 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code
Text: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0104
DSFP-TN0104
A111708
TN1L
125OC
TN0104
TN0104N3-G
TN0104N8-G
A1117
fet sot-89 marking code
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Untitled
Abstract: No abstract text available
Text: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2535
125pF
DSFP-TN2535
A111908
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1118A
2SC5551A
300mA,
300mA)
250mm2
A1118-6/6
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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41003
Abstract: No abstract text available
Text: SOLID STATE CURRENT SENSORS LDA100/LDA101/LDA110/LD A111 D E S C R IP T IO N M The LDA100/LDA101/LDA110/LDA111 are optocouplers with a single or darlirigton transistor outputs. A bi-directional or uni-directional input is available depending on which model you choose.
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LDA100/LDA101/LDA110/LD
LDA100/LDA101/LDA110/LDA111
100mA
00/LDA101/LDA110/LDA111
LDA10
/LDA101
LOA100/LDA101
LDA10M
DA101
LDA100/LDA101
41003
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