BUK75
Abstract: BUK7E11-55B
Text: I2P AK BUK7E11-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7E11-55B
BUK75
BUK7E11-55B
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Untitled
Abstract: No abstract text available
Text: I2P AK BUK7E11-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7E11-55B
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GR-1089-CORE
Abstract: PEB4264 TISP8200M TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor
Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View
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TISP8200M,
TISP8201M,
TISP8200M
TISP8201M
TISP8200M
GR-1089-CORE
PEB4264
TISP8200MDR
TISP8201M
TISP8201MDR
transistor k44
tip 416 transistor
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DATA SHEET SCR TRANSISTOR
Abstract: PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR
Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View
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TISP8200M,
TISP8201M,
TISP8200M
TISP8201M
TISP8200M
DATA SHEET SCR TRANSISTOR
PEB4264
k44 transistor
SCR 213
specifications of scr
GR-1089-CORE
TISP8200MDR
TISP8201M
TISP8201MDR
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GR-1089-CORE
Abstract: PEB4264 TISP8200M TISP8200MDR TISP8200MDR-S TISP8201M TISP8201MDR TISP8201MDR-S K45 S2
Text: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery
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TISP8200M,
TISP8201M,
TISP8200M
TISP8201M
TISP8200M
GR-1089-CORE
PEB4264
TISP8200MDR
TISP8200MDR-S
TISP8201M
TISP8201MDR
TISP8201MDR-S
K45 S2
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TRANSISTOR BL 560
Abstract: 79R241 D008 GR-1089-CORE infineon slic TISP6NTP2C
Text: H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP6NTP2C *R o QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors
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array resistor bourns
Abstract: D008 infineon slic 79R241 GR-1089-CORE SLIC10 K1 transistor array TISP6NTP2C
Text: TISP6NTP2C QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V
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TISP6NTP2C
Abstract: No abstract text available
Text: TISP6NTP2C QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V
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Ro510
06/03/PI0269
TISP6NTP2C
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping
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LBCX70GLT1G
LBCX70JLT1G
LBCX70KLT1G
LBCX70GLT3G
LBCX70JLT3G
3000/Tape
10000/Tape
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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AAT3693-AA
Abstract: AAT3693 CRCW04021002F CRCW04021501F TDFN-10 Lithium-Ion Battery Charger 23-6 1471K
Text: PRODUCT DATASHEET AAT3693 BatteryManagerTM 1.6A Lithium-Ion/Polymer Battery Charger in 2.2x2.2 TDFN General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input
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AAT3693
AAT3693
AAT3693-AA
CRCW04021002F
CRCW04021501F
TDFN-10
Lithium-Ion Battery Charger 23-6
1471K
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AAT3693
Abstract: AAT3693-AA CRCW04021002F CRCW04021501F TDFN-10
Text: PRODUCT DATASHEET AAT3693 BatteryManagerTM 1.6A Lithium-Ion/Polymer Battery Charger in 2.2x2.2 TDFN General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input
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AAT3693
AAT3693
AAT3693-AA
CRCW04021002F
CRCW04021501F
TDFN-10
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1336-WB035
Abstract: 1336-MOD-KB005 1321-3RB400-B 1336-WB110 dynamic brake bulletin 1336 1336-WB110 manual circuit 1336-MOD-KB050 20S-RFC AC drives regenerative braking circuits 1200 kVA, 690V transformers
Text: Common DC Bus Selection Guide Common DC Bus Applications Introduction Contents Overview this page Typical Common DC Bus Configuration this page Non-Regen Bus Supplies 3 Line Regeneration Solutions 8 Choppers & Dynamic Brakes 15 DC Input Drives 21 Power Components
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DRIVES-SG001B-EN-P
DRIVES-SG001A-EN-P
1336-WB035
1336-MOD-KB005
1321-3RB400-B
1336-WB110
dynamic brake bulletin 1336
1336-WB110 manual circuit
1336-MOD-KB050
20S-RFC
AC drives regenerative braking circuits
1200 kVA, 690V transformers
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201896B
Abstract: No abstract text available
Text: DATA SHEET AAT3693 1.6A Li-Ion/Polymer Battery Charger in a 2.2x2.2 TDFN Package General Description Features The AAT3693 BatteryManager is a highly integrated single-cell lithium-ion/polymer Li-Ion battery charger which operates from a USB port, or an AC adapter input
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AAT3693
AAT3693
201896B
201896B
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MQ 6 SENSOR pin diagram
Abstract: MQ 5 SENSOR pin diagram MQ 6 SENSOR
Text: W fipl HEWLETT mLftm PACKARD Low Current Bar Code D igitizer IC Technical Data HBCC-0500 Features • Compatible with HP Bar Code Sensors -H B C C -1570- 0.013 in. 0.33 mm - HBCC-1580 - 0.007 in. 0.185 mm - HBCC-1590 - 0.005 in. 0.13 mm • Ambient Light Rejection
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HBCC-0500
HBCC-1580
HBCC-1590
MQ 6 SENSOR pin diagram
MQ 5 SENSOR pin diagram
MQ 6 SENSOR
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tip 420 transistor
Abstract: QRC1133 st178 silicon diode temperature sensor Reflective Optical Sensor with Transistor Output
Text: so REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 PACKAGE DIMENSIONS DESCRIPTION Th e Q RC1133 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting
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QRC1133
QRC1133
ST1781
tip 420 transistor
st178
silicon diode temperature sensor
Reflective Optical Sensor with Transistor Output
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QRB1134
Abstract: QRB1133 LF 833
Text: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1133/1134
QRB1133/1134
QRB1133
QRB1134
LF 833
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CLC207AI
Abstract: THERMALLOY 2268b CLC205 CLC207
Text: Low Distortion Wideband Op Amp APPLICATIONS: • fast, precision A/D conversion • wide dynamic range IF amps • test waveform generation • VCO drivers • DDS postamps • radar/communication receivers • line drivers FEATURES typical : • -8 0 /-8 5 d B c 2nd/3rd harmonics at 20MHz
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CLC207
CLC207
20MHz
CLC207.
CLC207AI
THERMALLOY 2268b
CLC205
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Untitled
Abstract: No abstract text available
Text: 4SE D ISOCOM COMPONENTS LTD • MôfibSlD ÜD0030E Q B I S O MOC 8100X ' Wfc*mms*»?hw crv •?v t ^ .’îîäfl'^1- M i ï 1 * 3 1' v ?:!'■■vc*i ^ :"'-I-.':.!!hJ - ^ € Jr " iJ'-aHlaV M dfti'i '■’Üil5>»iyiyrf'iîi, w’1,^ m - n % æ >frf C J^Iya- y*:
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D0030E
8100X
8100X
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Transistor BFR 96
Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar
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fl235bD
QQQMb70
BFR34A
2N6620.
Q62702-F346-S1
Q68000-A4668
0Q0Mb73
Transistor BFR 96
2SC 930 AF
transistor 2Sc 2053
Transistor BFR34a
Transistor BFr 99
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Untitled
Abstract: No abstract text available
Text: 45E D ISOCOM COMPONENTS LTD • MflfibSlO □□□□274 T « I S O . IS 204X I»},.lu,■K-'n»."s *«»»■■g».$'ji 'r * v H » ^ ^ ^ ^ I* .i£ ï OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The IS 204X is a optically coupled isolator consisting
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BFQ60
Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal
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fl23Sb05
QQ04b43
-TZ3/-33_
Q62702-F655
fl23SbOS
BFQ60
BFQ60
BI10-M30T-AP6X
Q62702-F655
bfq 85
Siemens Microwave
S12PS2
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OPB706B
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB804 PACKAGE DIMENSIONS 500 12.70; PIN 1 -.175 (4.45 _L .250 (6.35) T I FEATURES — — rt .070(1.78) J_ 'SEE NOTE 4 .350 (8.89) MIN J_ .300 (7.62)- I I-SEE NOTE 3 (-.125 (3.18) ±.005 .460 (11.68) .100 (2.54)- j I-S E E NOTE 3
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OPB804
OPB804
OPB706B
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zo 107 NA P 611
Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal
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fl23Sb05
QQQ4b43
Q62702-F655
023SbQS
BFQ60
zo 107 NA P 611
TRANSISTOR 2SC 2026
642p
2sc 643
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