TRANSISTOR B 764 Search Results

TRANSISTOR B 764 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR B 764 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am	OCR Scan	BLW77 28The	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
TRIMMER cap no-2222 809 07015 Abstract: BD433 BLW77 Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am	OCR Scan	BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77	PDF
A 7800 Abstract: a7800 Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module	OCR Scan	00Q2D25 A 7800 a7800	PDF
A7800 Abstract: a 7800 Text: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module	OCR Scan	34032T7 00Q2D25 A7800 a 7800	PDF
BLW77 Abstract: neutralization push-pull philips Trimmer 60 pf Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am	OCR Scan	D0b3277 BLW77 7110flSh 7Z77473 7Z77475 BLW77 neutralization push-pull philips Trimmer 60 pf	PDF
BFQ 42 transistor Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES	OCR Scan	BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	OCR Scan	BUK452-100A/B BUK472-100A/B BUK472 -100A -100B PINNING-SOT186A -ID/100	PDF
8 pin ic lm 745 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.	OCR Scan	BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors b b s a 'm D D B D D B fl IT T M APX Product specification VHF push-pull power MOS transistor BLF278 N AUER PHILIPS/DISCRETE b'lE 1> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	BLF278 OT262 OT262A1 MCA982	PDF
transistor B 764 Abstract: No abstract text available Text: UMA1N/FMA1A h 7 y' V 7s £ /Transistors /Dual Mini-Mold Transistor U M A F M 1 N A 1 A i M$ * y —yf& PNP y \|J 3 > h 7 > y ^ i ' Epitaxial Planer PNP Silicon Transistor «f M/Inverter Driver • ii-ffi^tÜ /Dimensions U nit: mm 2 l B r o x '> '$ ; u ir t j®	OCR Scan	200mW transistor B 764	PDF
TRANSISTOR C 2577 Abstract: transistor A62 Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector	OCR Scan	PRF957 OT323 AM062 /printrun/ed/pp14 TRANSISTOR C 2577 transistor A62	PDF
SG 2058 Abstract: transistor A62 Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector	OCR Scan	PRF947 OT323 MAM062 /printrun/ed/pp14 SG 2058 transistor A62	PDF
MARKING CODE 24 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDTC114TE PDTC114TE 115104/00/02/pp8 MARKING CODE 24	PDF

ic 7824 Abstract: 7824 BT T460-8525 Text: -T — S • S /— h Com pound Transistor BN1L4L S # lF 3M P N P J i b ° ^ i s - D V M i s ' □ > & ft o '< 4 fa m i t 2.0 +0.2 R i = 47 kQ, R 2= 22 kQ) o B A 1 L 4 L £ n > Y>J / > ? 'J t f f f l t è HO & ÌÌi5È tè (Ta = 25 °C) 9.9 • B& fé	OCR Scan	PWS10 CycleS50 ic 7824 7824 BT T460-8525	PDF
MRF517 Abstract: 2761 l transistor 336 motorola OB2200 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n	OCR Scan	MRF517 MRF517 2761 l transistor 336 motorola OB2200	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
transistor 2038 Abstract: 2SA1729 S60S6 Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage	OCR Scan	2SA1729 -T-37-/Ã 250mm2 transistor 2038 2SA1729 S60S6	PDF
CMOS drum generator Abstract: HT3020D 7465 holtek drum Text: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package	OCR Scan	HT3020A/B/C/D HT3020A/B/C/D HT3020A 240Kn HT3020B HT3020C HT3020D HT3020A, CMOS drum generator HT3020D 7465 holtek drum	PDF
ic 7465 Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator Text: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators	Original	HT3020A/B/C/D HT3020A/B/C/D HT3020A HT3020B HT3020C HT3020D ic 7465 HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator	PDF
BUZ171 Abstract: No abstract text available Text: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs 1D flbS on Package Ordering Code BUZ171 -50 V -8 A 0.3 n TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 30 °C	OCR Scan	BUZ171 O-220 C67078-S1450-A2 BUZ171	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs	OCR Scan	125002/00/03/pp12	PDF
2SC3773 Abstract: SANYO SS 1001 Text: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band	OCR Scan	n707b 2SC3773 1946B 2SC3773 SANYO SS 1001	PDF
Untitled Abstract: No abstract text available Text: BUZ 272 In fin e o n technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs b BDS on Package Ordering Code BUZ 272 -100 V -15 A 0.3 Q. TO-220 AB C67078-S1454-A2 Maximum Ratings Symbol Parameter Continuous drain current	OCR Scan	O-220 C67078-S1454-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5	PDF

TRANSISTOR B 764 Search Results

TRANSISTOR B 764 Result Highlights (5)

TRANSISTOR B 764 Datasheets Context Search

Untitled

2sb504

TRIMMER cap no-2222 809 07015

A 7800

A7800

BLW77

BFQ 42 transistor

Untitled

8 pin ic lm 745

Untitled

transistor B 764

TRANSISTOR C 2577

SG 2058

MARKING CODE 24

ic 7824

MRF517

CT 1975 sam

transistor 2038

CMOS drum generator

ic 7465

BUZ171

Untitled

2SC3773

Untitled