2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
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fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
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Q62702-D1070
Abstract: TRANSISTOR D 1785 BD430
Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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T-33-/7
Q62702-D1070
fl23Sb05
Q0043b2
BD430
Q62702-D1070
TRANSISTOR D 1785
BD430
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Untitled
Abstract: No abstract text available
Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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235b05
G0G4352
Q62702-D1068
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transistor BD 424
Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets
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235b05
G0G4352
Q62702-D1068
QDQ43SM
BD424
transistor BD 424
a06 transistor
000M353
BD424
Q62702-D1068
S100
transistor A08
A07 NPN transistor
transistor bd 202
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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BD136
BD138
BD140
BD140-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
pin configuration transistor bd140
2SD669 equivalent
BUV44
bd140 equivalent transistor
MJE15020
bd140 equivalent
BD250C EQUIVALENT
RCA122
2N6045 NPN POWER DARLINGTON
TRANSISTOR BD 136
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transistor k 975
Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors
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023SbOS
T-33-29
Q62702-D902
Q62702-D903
Q62702-D904
Q62902-B63
Q62902-B62
25imi
BD977
transistor k 975
c 879 transistor
afe 1000
BD880
darlington bd 876
BD876
d966 transistor
bd 975 transistor
BD878
BD 875
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transistor d2118
Abstract: IB1011S190 d2118 D2118 transistor
Text: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this
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IB1011S190
IB1011S190
IB1011S190-REV-NC-DS-REV-D
transistor d2118
d2118
D2118 transistor
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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BD 676
Abstract: BD33KA5WFP BD00KA5WF BD00KA5WFP BD15KA5WFP
Text: Secondary LDO Regulator Series for Local Power Supplies 500mA Secondary LDO Regulators for Local Power Supplies BD□□KA5,BD□□KA5W Series,BD00KA5W Series No.09024EAT01 ●General Description The BD□□KA5 series are low-saturation regulators that are available for output currents up to 500mA. The output voltage
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500mA
BD00KA5W
09024EAT01
500mA.
R0039A
BD 676
BD33KA5WFP
BD00KA5WF
BD00KA5WFP
BD15KA5WFP
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3000S200 TECHNOLOGIES, INC. Pulsed Medical Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of
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IB3000S200
IB3000S200
IB3000S200-REV-NC-DS-REV-A
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IL311ANM
Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Secondary LDO Regulator Series for Local Power Sources 500mA Secondary LDO Regulator Vin Max. 7V BD□□KA5 and BD□□KA5W Series ●General Description The BD□□KA5 series are low-saturation regulators that are available for output currents up to 500mA. The output voltage
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500mA
500mA.
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742 8pin ic
Abstract: 45100 BD00KA5WF BD 140 transistor BD00KA5WFP BD15KA5WFP BD33KA5WFP
Text: TECHNICAL NOTE Secondary LDO Regulator Series for Local Power Sources 500mA Secondary LDO Regulator Vin Max. 7V BD□□KA5 and BD00KA5W Series ●General Description The BD□□KA5 series are low-saturation regulators that are available for output currents up to 500mA. The output voltage
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500mA
BD00KA5W
500mA.
742 8pin ic
45100
BD00KA5WF
BD 140 transistor
BD00KA5WFP
BD15KA5WFP
BD33KA5WFP
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transistor BD 512
Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern
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12-VAkku
/50Hz
III/18/379
transistor BD 512
transistor kt 801
transistor kt
Diode KD 202
junost 603
kt801b
GT 404
GT313B
MP 41 transistor
MP42A
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100MHZ
Abstract: BCW61D
Text: RECTRON BCW61D SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed
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BCW61D
OT-23
OT-23
MIL-STD-202E
100MHZ
BCW61D
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230V ac to 5V dc usb charger circuit
Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5
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ACT36X,
ACT33X
2012-Octâ
ACT365-02
EPC17)
85-264Vac
2200mA
230V ac to 5V dc usb charger circuit
D13005
TRANSISTOR SMD p1
DIODE SMD d8
EE20 core Flyback transformer
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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WM30AV53H
Abstract: WM14-96 three phase energy meter C1220 TRANSISTOR Wm30 UDM60 MC485232 bacnet protocol tachometer with analog voltage as output kwh meter panel
Text: 1477-2012.qxp:QuarkCatalogTempNew 8/31/12 3:58 PM Page 1477 16 Energy Meters and Panel Meters RoHS The 96 x 96 mm 1/4 DIN WM30 Series is a three-phase modular smart power analyzer capable of energy metering as well as complete load monitoring including harmonic analysis. It provides 0.2 accuracy. A large LCD display offers a single
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001Hz
Pt100,
Pt250,
Pt500,
Pt1000,
Ni100
WM30AV53H
WM14-96
three phase energy meter
C1220 TRANSISTOR
Wm30
UDM60
MC485232
bacnet protocol
tachometer with analog voltage as output
kwh meter panel
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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REGULATOR sw 13003
Abstract: 13003 switch mode circuit
Text: ACT334 Rev 2, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator FEATURES over temperature conditions. • Ultra Low Standby Power < 30mW The ACT334 ActivePSRTM is optimized for high performance, cost-sensitive applications, and utilizes Active-Semi’s proprietary primary-side
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ACT334
14-Nov-12
ACT334
REGULATOR sw 13003
13003 switch mode circuit
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Untitled
Abstract: No abstract text available
Text: ADE-202-038 0 Mar. 1990 HD404678,HD4074678 4-B it Single-Chip Microcomputer 0 H ITA C H I Description The HD404678 and HD4074678 are 4-bit single chip HMCS400-series microcomputers for tele phone applications which are designed to increase program productivity and incorporate a highprecision dual tone multi-frequency (D TM F)
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ADE-202-038
HD404678
HD4074678
HD4074678
HMCS400-series
192-word
10-bit
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ic 6 pin smd for power supply led
Abstract: transistor D13003 X D13003
Text: Innovative PowerTM ACT364 DESIGN GUIDE Mar 2011 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs August 2012 Copyright 2012 Active-Semi, Inc. - - www.active-semi.com www.active-semi.com LED DESIGN GUIDE
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ACT364
ACT801
120VAC)
350mA
700mA
G/16V,
ic 6 pin smd for power supply led
transistor D13003 X
D13003
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