TRANSISTOR BI 185 Search Results

TRANSISTOR BI 185 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR BI 185 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2U37 Abstract: BU2520af BY228 TRANSISTOR BO 345 Text: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3331 DDEöBbR 514 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in	OCR Scan	BU2520AF OT199; 2U37 BU2520af BY228 TRANSISTOR BO 345	PDF
transistor 2028 Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353 Text: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter	OCR Scan	BFE540 OT353 MBG192 711002b OT353. 71iafi2h transistor 2028 bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353	PDF
TRANSISTOR MARKING 3D 6PIN Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30 Text: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.	OCR Scan	BFM540 OT363 OT363A OT363. 711005b TRANSISTOR MARKING 3D 6PIN bi 370 transistor BFM540 transistor 2028 transistor code t30	PDF
T1800GB45A Abstract: No abstract text available Text: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T1800GB45A T1800GB45A	PDF
TTL 7457 Abstract: BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice Text: Philips Semiconductors Preliminary specification NPN wideband cascode transistor BFC540 FEATURES PINNING • Small size PIN SYMBOL • High reverse isolation 1 t>2 base 2 • High linearity 2 ei emitter 1 • Low noise figure 3 bi base 1 • Gold metallization ensures excellent reliability.	OCR Scan	BFC540 OT353 TTL 7457 BFC540 XFK7 NPN Transistor 13007 NPN power transistor spice	PDF
T1800GB Abstract: T1800GB45A D-68623 IC500A westcode t1800 westcode t1800gb45a Text: WESTCODE An Date:- 1 Sep, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T1800GB45A T1800GB45A T1800GB D-68623 IC500A westcode t1800 westcode t1800gb45a	PDF
TF-450 Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am	Original	ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761	PDF
transistor bI 240 Abstract: transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG Text: 0.25um 1P5M Logic 2.5V / 5.0V / 30V updated in 2005.03.21 Features Vdd Core/IO/HV Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization	Original	V/30V 30um2 36um2 transistor bI 240 transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG	PDF
672047 Abstract: 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132	Original	OPA660 MOPA660 OPA660. 672047 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design	PDF
bi 370 transistor Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features Vdd Core/IO/HV Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization	Original	V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
Gan transistor Abstract: No abstract text available Text: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and	OCR Scan		PDF
672047 Abstract: BUF600 low-pass Passive filter design AN181 OPA660 AB-190 cc18d AN-180 Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132	Original	OPA660 672047 BUF600 low-pass Passive filter design AN181 OPA660 AB-190 cc18d AN-180	PDF
TIPL773A Abstract: TIPL773B TRANSISTOR tipl773A TIPL773 NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor Text: TE XA S I N S T R -COPTO} 8961726 bE TEXAS IN S T R Î FJ flTbl7 ab Q 0 3 7 D 77 fi 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature	OCR Scan	Q037D77 TIPL773, TIPL773A, TIPL773B T-33-29 TIPL773 TIPL773A TIPL773B TRANSISTOR tipl773A NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor	PDF

5a2 zener diode Abstract: ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422 Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and	Original	750CX, 750CXe, 750CX/CXe PPC750 5a2 zener diode ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422	PDF
TIPL773 Abstract: B 773 transistor TIPL773A Text: TEXAS INSTR -COPTO} 8961726 b E Î F J f l T b l 7 ab Q0 3 7 D77 TEXAS IN S T R I 62C 37077 O P T O ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 • 180 W a t 2 5 °C Case Temperature	OCR Scan	TIPL773, TIPL773A, TIPL773B TIPL773 T-33-29 B 773 transistor TIPL773A	PDF
diode t25 4 HO Abstract: PO25C 415E BUK456 BUK456-200A BUK456-200B T0220AB Text: PHILIPS INTERNATIONAL bSE D • 7110flEb OObHlEl 5*13 ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is Intended for use in	OCR Scan	7110flEb BUK456-200A/B BUK456 -200A -200B T0220AB b4125 diode t25 4 HO PO25C 415E BUK456-200A BUK456-200B T0220AB	PDF
2T2 transistor Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016 Text: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK456-200A/B T0220AB -100-C -200A -200B 711DA2b DDb41BS 2T2 transistor BUK456 BUK456-200A BUK456-200B PHILIPS 016	PDF
5c2 zener diode Abstract: zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and	Original	750CX, 750CXe, 750CX/CXe 750CXe_ PPC750 5c2 zener diode zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode	PDF
Untitled Abstract: No abstract text available Text: PLASTIC SIDELOOKER PAIR 8PT9 Ëi ECTROlfC 5 H23A1/2 SECTION X~X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting cfiode and a silicon phototransistor. The clear epoxy packaging systern is designed to optimize the mechanical	OCR Scan	H23A1/2 ST1342 5T1221 ST1222	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
acs sot-343 Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560	PDF
620 sot-343 Abstract: acs sot-343 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343	PDF
Transistor BC 1078 Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425 Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain	Original	BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425	PDF

TRANSISTOR BI 185 Search Results

TRANSISTOR BI 185 Result Highlights (5)

TRANSISTOR BI 185 Datasheets Context Search

2U37

transistor 2028

TRANSISTOR MARKING 3D 6PIN

T1800GB45A

TTL 7457

T1800GB

TF-450

transistor bI 240

672047

bi 370 transistor

rjp6065

Gan transistor

672047

TIPL773A

5a2 zener diode

TIPL773

diode t25 4 HO

2T2 transistor

5c2 zener diode

Untitled

BFP620 acs

acs sot-343

620 sot-343

Transistor BC 1078