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    TRANSISTOR C5D Search Results

    TRANSISTOR C5D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C5D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5089 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q89 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm Low Noise Figure, High Gain. +G.5 3.5- a s N F —l.ldB , |S2 le|2—13dB f—1GHz •i a ii5 1 . 0 - 0.15 C5d MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC5089 2SC5Q89 2--13dB SC-59 --j50 PDF

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


    OCR Scan     		BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330 PDF

    KTA1666

    Abstract: KTC4379 OB2 SOT-89
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)


    OCR Scan     		KTC4379 KTA1666. KTC4379 250mm 250mm2 KTA1666 OB2 SOT-89 PDF

    philips resistor 2322-153

    Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
    Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


    OCR Scan     		711002b BLV97CE OT171 philips resistor 2322-153 philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN2112,RN2113 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112, RN2113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors


    OCR Scan     		RN2112 RN2113 RN2112, RN1112, RN1113 RN2112 PDF

    KTA1504S

    Abstract: KTC3875S
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1504S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 0.1m A /hF E (2m A )= 0.95(T yp.). DIM A B C D E G H J • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		KTA1504S KTC3875S. KTA1504S KTC3875S PDF

    IGBT K 40 T 1202

    Abstract: No abstract text available
    Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.


    OCR Scan     		TF1207 TF1207 IGBT K 40 T 1202 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2716 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i 7 1 fi U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 3 .5 - Q 3 AM FREQUENCY CONVERTER APPLICATIOS. + 0.25 i.5-ai 5 f—


    OCR Scan     		2SC2716 PDF

    2SK210

    Abstract: marking ADMI
    Text: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure


    OCR Scan     		2SK210 100MHz) SC-59 100MHz 200i----- 2SK210 marking ADMI PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •


    OCR Scan     		2SA1362 -400m 961001EAA2' PDF

    2SK211

    Abstract: 2SK211Y 2SK211GR 2L2 marking
    Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)


    OCR Scan     		2SK211 100MHz) SC-59 100MHz 2SK211 2SK211Y 2SK211GR 2L2 marking PDF

    SC-59 marking c5d

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 w êêf m m • 31 1 m tr ■ AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm • High Voltage : V q e q = —120V + 0.5 3.5-as • Excellent h pg Linearity


    OCR Scan     		2SA1312 --120V 2SC3324 SC-59 marking c5d PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK362 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK362 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D .5.1 MAX. IM PEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : VGD g = —50V


    OCR Scan     		2SK362 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 5 Unit in mm TOSHIBA TF1205 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


    OCR Scan     		TF1205 TF1205 PDF

    TRANSISTOR SMD MARKING CODE

    Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
    Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose


    Original     		100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE PDF

    transistor marking 44 sot23

    Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
    Text: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most


    Original     		CMSH1-20ML CMSH2-20M CMSH2-20L CMSH3-20MA CMSH3-20L CMSH5-20 CS20ML CS220M 200mA CMDSH05-4 transistor marking 44 sot23 marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100 PDF

    TCD101AC

    Abstract: toshiba linear image sensor DS0026CN T-41-55 toshiba linear ccd photo transistor til 32 CCD-Sensor TOSHIBA Memory SN74LS04 ccd linear toshiba
    Text: TOSHIBA -CLOGIC/flENOim T? » T | ci D cl 7a4f l OOCHSll 9097248 TOSHIBA LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) — — 6 7C T Ç Q 1Û 1 A C T-41-55 0 9 5 11 The TCD101AC is a high resolution and h i g h s e nsitivity 1728 element linear


    OCR Scan     		D101AC T-41-55 TCD101AC 15/im TCD101AC 4D22E-C) l5ftmX1788) toshiba linear image sensor DS0026CN T-41-55 toshiba linear ccd photo transistor til 32 CCD-Sensor TOSHIBA Memory SN74LS04 ccd linear toshiba PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2272 RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS  C • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED POUT = 350W MINIMUM


    Original     		MS2272 1234567869ABC 1234567869ABC MS2272 C8238C4654 DA64DFC1D8DC PDF

    BA6805A

    Abstract: kd 506 transistor VU peak hold square root amplifier BA6800A AC Voltage comparator circuit diagram audio peak level meter Transistor AC 188 VU meter transistor Transistor AC 141
    Text: BA6800A BA6800AF BA6805A Fluorescent display tube level meter driver, 16-point x 2 channel, VU scale, bar display The BA6800A, BA6800AF, and BA6805A monolithic ICs are two-channel, 16-point, bar-type fluorescent level meter drivers. The grid output and duty cycle are 1/8.


    OCR Scan     		BA6800A BA6800AF BA6805A 16-point BA6800A, BA6800AF, 16-point, DIP28 DD1343M kd 506 transistor VU peak hold square root amplifier AC Voltage comparator circuit diagram audio peak level meter Transistor AC 188 VU meter transistor Transistor AC 141 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator


    Original     		MAX16813 350kHz 600mA 150mA 100mA 150mA 400ms. MAX16813 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator


    Original     		MAX16813 350kHz 600mA 150mA 100mA 150mA 400ms. MAX16813 PDF

    IC 7481 pin configuration

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction


    OCR Scan     		16/SCLK^ KI-9711 GD37fi7fi IC 7481 pin configuration PDF

    stc5dnf30v

    Abstract: JESD97
    Text: STC5DNF30V Dual N-channel 30V - 0.032Ω - 4.5A - TSSOP8 2.7V-Driver STripFET Power MOSFET General features Type VDSS RDS on ID STC5DNF30V 30V < 0.035Ω (@4.5V) < 0.040Ω (@2.7V) 4.5A • Standard outline for easy automated surface mount assembly ■


    Original     		STC5DNF30V stc5dnf30v JESD97 PDF