Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR CB550 Search Results

    TRANSISTOR CB550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CB550 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8mm pitch BGA 256 pin 14x14

    Abstract: CB45000 CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10
    Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV


    Original     		CB55000 8mm pitch BGA 256 pin 14x14 CB45000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10 PDF

    b55qs

    Abstract: CB45000 ultra fine pitch BGA CB55Q CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics
    Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV


    Original     		CB55000 b55qs CB45000 ultra fine pitch BGA CB55Q D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics PDF

    0.25-um CMOS standard cell library inverter

    Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
    Text: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided


    Original     		CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI PDF

    0.18-um CMOS technology characteristics

    Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original     		CB65000 85K/mm 30nanoWatt/Gate/MHz/ 0.18-um CMOS technology characteristics CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V PDF

    CB55000

    Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original     		CB65000 85K/mm 30nanoWatt/Gate/MHz/ CB55000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST PDF

    ST100

    Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
    Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.


    Original     		CB65000 85K/mm2, 30nanoWatt/Gate/MHz/Stdload. ST100 CB55000 D950 ST10 ST20 tristate nand gate PDF

    24c02 wp

    Abstract: transistor CB550 nForce4 G781-1P8F intel DG 31 crb c3421 transistor intel dg 41 crb nvidia ck804 nForce4 sli c3751 transistor
    Text: 5 4 GPU on Normal Mode conduct MXM on master slot only,link to PCIE x16 lanes . PAGE INDEX: 01_BLOCK_DIAGRAM 02_CLOCK_BLOCK_DIAGRAM GPU SLAVE 09_CK804 1/7 _HT/CPU_IF 10_CK804(2/7)_PCIE 11_CK804(3/7)_PCI/LPC 12_CK804(4/7)_SATA/PATA/XTAL-IN 13_CK804(5/7)_USB/MAC/AC97/RTC/SMB


    Original     		26pins CK804 USB/MAC/AC97/RTC/SMB 8LANESdsn0403 2200P. 24c02 wp transistor CB550 nForce4 G781-1P8F intel DG 31 crb c3421 transistor intel dg 41 crb nvidia ck804 nForce4 sli c3751 transistor PDF