BUK474-600B
Abstract: No abstract text available
Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.
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BUK474-600B
DMML24
OT186A
BUK474-600B
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Untitled
Abstract: No abstract text available
Text: 7 ^ 3 9 - 0 ? Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE international GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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BUK442-60A/B
BUK442
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BUK426-800A
Abstract: No abstract text available
Text: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-800A/B
BUK426
-800B
T-39-11
7110fl5tj
BUK426-800A
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Untitled
Abstract: No abstract text available
Text: Philips Components D ata sheet status Preliminary specification d ate of Issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK441-60A/B
7110flEb
BUK441
T-39-09
BUK441-60A/B
711Gfl2fc.
004MSb3
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TL-250
Abstract: tl250 BUK993-60A BUK9y3-60A transistor tic 698 vmk 5 pin
Text: ' 7 ^ 3 >9 ~ ? D Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK993-60A PowerMOS transistor Logic Level SensorfET philips international 5bE D I_ GENERAL DESCRIPTION N-channel enhancement mode
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BUK993-60A
OT263
0G447b4
BUK993-60A
TL-250
tl250
BUK9y3-60A
transistor tic 698
vmk 5 pin
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BUK551-60A
Abstract: BUK551-60B T0220AB WY transistor
Text: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor Logic level FET 5 INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in
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T0220AB
BUK551-60A/B
7110fl2b
BUK551
T-39-11
711QflSb
00M4bfifl
BUK551-60A
BUK551-60B
T0220AB
WY transistor
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Transistor Bo 17
Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
Text: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK426-50A/B
G0N4115
K426-60A/B
PINNING-SOT199
BUK426
Transistor Bo 17
BUK426-50A
BUK426-60A
BUK426-60B
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BVJ 47
Abstract: transistor B42 BUK442 BUK442-60A BUK442-60B 3909 d044
Text: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor SbE T> INTERNATIONAL PHILIPS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope,
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BUK442-60A/B
711002b
-SOT186
BUK442
BVJ 47
transistor B42
BUK442-60A
BUK442-60B
3909
d044
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BUK442
Abstract: BUK442-60A BUK442-60B 1e47
Text: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,
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BUK442-60A/B
711002b
-SOT186
BUK442
BUK442-60A
BUK442-60B
1e47
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BUK475-400B
Abstract: LD25C BUK475 3909
Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode
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OT186A
475-400B
711002b
0d44b4"
BUK475-400B
LD25C
BUK475
3909
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TRansistor L 701
Abstract: vmk 5 pin BUK995-60A
Text: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic
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OT263
BUK995-60A
004M7b5
TRansistor L 701
vmk 5 pin
BUK995-60A
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TRANSISTOR P3
Abstract: BUK427-400B philips kt
Text: Philips Components D ata sheet status Product specification date of issue March 1991 PowerMOS transistor SbE PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channe! enhancem ent mode field-effect pow er transistor in a plastic full pack envelope. The device is intended fo r use in
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BUK427-400B
DD44ma
OT199
TRANSISTOR P3
BUK427-400B
philips kt
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BUK426-1000A
Abstract: BUK426-1000B BUK426-100
Text: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION
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BUK426-1OOOA/B
711002b
BUK426
-1000A
-1000B
-SOT199
T-39-11
K426-10OOA/B
BUK426-1000A
BUK426-1000B
BUK426-100
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DH47
Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Text: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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BUK541-100A/B
-SOT186A
BUK571-100A/B
DH47
BUK571
BUK571-100A
BUK571-100B
buk541-100
K571
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Untitled
Abstract: No abstract text available
Text: SbE D PHILIPS INTERNATIONAL Philips Components_ D a ta s h e e t status Preliminary specification d a te o f issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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7110fl2b
0G4470H
BUK572-60A/B
BUK572
BUK542-60A/B
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D4MB
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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711Qfl2b
76-1000A/B
BUK446-1000A/B
BUK476
-1000A
-1000B
-SOT186A
T-39-09
BUK476-1000A/B
7110fi2b
D4MB
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Untitled
Abstract: No abstract text available
Text: 7 = 5 ? Philips Components D ata sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor SbE D P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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BUK427-500B
PINNING-SOT199
7110fl2fc>
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harris 3096
Abstract: No abstract text available
Text: H A R R IS SEfllCOND SECTOR HARRIS 40E D B 4 3 D 2 2 7 1 0D3S30M T I IHAS GA3096, CA 3096A CA3096C N -P -N /P -N -P Transistor Arrays August 1991 CA3096A, CA309G, CA3096C Essentia/ Differences Applications • Five-Independent Transistors ►Three N-P-N and
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0D3S30M
GA3096,
CA3096C
CA3096A,
CA309G,
CA3096
A3096
CA3096A
harris 3096
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES
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BS107
-TO-92
MBB073
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BUK451-60A
Abstract: No abstract text available
Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L SbE D I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK451-60A/B
BUK451
711Gfi2ti
BUK451-60A
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k426
Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Text: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode
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BUK426-50A/B
K426-60A/B
-39-i/
PINNING-SOT199
BUK426
k426
bu 515
BUK426-50A
transistor 03e
Transistor Bo 17
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BUK427-600B
Abstract: No abstract text available
Text: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.
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BUK427-600B
7110fl5fc.
-SOT199
T-39-11
711Qfl2b
BUK427-600B
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D0447
Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Text: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK542-60A/B
711002b
00M4704
K572-60A/B
PINNING-SOT186A
BUK572
D0447
K572
00M4
Scans-00501
12VBS
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FUH -29A001B
Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Text: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in
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BUK638-800A/B
BUK638
-800A
1E-09
BUK638-80Ã
FUH -29A001B
BUK638-800A
BUK638-800B
WO 02S
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