Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ß PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel M O S Field Effect Transistor designed for D C /D C converter and power m anagem ent applications of notebook computers.
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PA1710A
PA1710AG
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02p SMD TRANSISTOR
Abstract: No abstract text available
Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application
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bbS3131
BST82
175DSon
02p SMD TRANSISTOR
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BFR93AW
Abstract: B 1359 marking A3 amplifier 449
Text: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2
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BFR93AW
D-74025
07-Nov-97
BFR93AW
B 1359
marking A3 amplifier 449
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BFR92AW
Abstract: No abstract text available
Text: BFR92AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 13 652 2 13 570 3 Marking: WP2
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BFR92AW
D-74025
07-Nov-97
BFR92AW
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d 1879 TRANSISTOR
Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471
Text: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in
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BFP91A.
BFQ23C
711Gfl5b
d 1879 TRANSISTOR
transistor D 1666
BFQ23C
transistor d 1557
BFP91A
B 1449 transistor
TRANSISTOR D 471
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Untitled
Abstract: No abstract text available
Text: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D | 7^4142 0007300 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA64
T-29-29
OT-23
MMBTA63
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Untitled
Abstract: No abstract text available
Text: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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bb53T31
D03D675
BUK638-500B
bb53331
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2929 transistor
Abstract: MMBTA63 MMBTA64 t2929
Text: SAMSUNG SEMICONDUCTOR D | 7^4,4142 0007300 3 | INC MMBTA64 PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBTA64
T-29-29
MMBTA63
OT-23
100fjA
100mA
100mA,
2929 transistor
t2929
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BUX88
Abstract: IEC134 9a 1b
Text: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 ’g OIIOSÌ S ■ BUX88 - ,- - - _ A r - 3 3 - | g SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope intended for
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bbS3T31
BUX88
r-33-Iff
T-33-15
7z88899
BUX88
7z8822s
IEC134
9a 1b
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PDF
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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blw86
Abstract: 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke
Text: N AMER PHILIPS/DISCRETE bbSB'îai DDSTHbl 071 • APX BLW86 b'ïE D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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BLW86
7Z77783
blw86
43120203664
BY206
431202036640 choke
IEC134
pdst47q
sot-123-2
ferroxcube wideband hf choke
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PDF
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.
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PHPT610030NPK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610030PK.
AEC-Q101
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A1489 TRANSISTOR
Abstract: No abstract text available
Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure
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BFR93A/BFR93AR/BFR93AW
BFR93A
BFR93AR
BFR93AW
D-74025
20-Jan-99
A1489 TRANSISTOR
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transistor p2a
Abstract: No abstract text available
Text: • Philips Semiconductors bbSB'lBl ODBSTB? 7Tfl « A P X N AUER PHILIPS/DISCRETE Product specification b?E D PNP switching transistor FEATURES PMST3906 PIN CONFIGURATION • S-mini package • Short switching time. H* H* DESCRIPTION PNP transistor in a plastic SOT323
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PMST3906
OT323
MAM096
transistor p2a
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BFR92A P2
Abstract: BFR92A BFR92AR BFR92AW 706 TRANSISTOR sot-23
Text: BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency
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BFR92A/BFR92AR/BFR92AW
BFR92A
BFR92AR
BFR92AW
20-Jan-99
BFR92A/BFR9sign
D-74025
BFR92A P2
706 TRANSISTOR sot-23
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BFR92A P2
Abstract: BFR92A BFR92AR BFR92AW BFR92a MARKING P2
Text: BFR92A/BFR92AR/BFR92AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency
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BFR92A/BFR92AR/BFR92AW
BFR92A
BFR92AR
BFR92AW
D-74025
20-Jan-99
BFR92A P2
BFR92a MARKING P2
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ZS 633
Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure
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BFR93A/BFR93AR/BFR93AW
BFR93A
BFR93AR
BFR93AW
D-74025
20-Jan-99
ZS 633
BFR93A application board
MARKING WR2 SOT-23
B 1359
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TRANSISTOR D 570
Abstract: BF 145 transistor transistor bf
Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled
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23SLQS
0GQ4S23
TRANSISTOR D 570
BF 145 transistor
transistor bf
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BFR93A
Abstract: BFR93A application board ZS 1052 AC BFR93AR BFR93AW transistor BFR93A MARKING WR2 SOT-23
Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure
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Original
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BFR93A/BFR93AR/BFR93AW
BFR93A
BFR93AR
BFR93AW
20-Jan-99
BFR93A/BFR93design
D-74025
BFR93A application board
ZS 1052 AC
transistor BFR93A
MARKING WR2 SOT-23
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BFR92a MARKING P2
Abstract: BFR92A BFR92AR BFR92AW
Text: BFR92A/BFR92AR/BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency
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BFR92A/BFR92AR/BFR92AW
BFR92A
BFR92AR
BFR92AW
D-74025
20-Jan-99
BFR92a MARKING P2
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PDF
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BFR93AW
Abstract: BFR93A application board transistor BFR93A ZS 1052 AC BFR93A BFR93AR BFR93A VISHAY ZS 633
Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure
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Original
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BFR93A/BFR93AR/BFR93AW
BFR93A
BFR93AR
BFR93AW
D-74025
20-Jan-99
BFR93A application board
transistor BFR93A
ZS 1052 AC
BFR93A VISHAY
ZS 633
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PDF
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1e47
Abstract: BUK638-500B SI3090
Text: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in
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BUK638-500B
Tt-25
1e47
BUK638-500B
SI3090
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