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    TRANSISTOR FOR POWER AMPLIFIER FREQ UMTS Search Results

    TRANSISTOR FOR POWER AMPLIFIER FREQ UMTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FOR POWER AMPLIFIER FREQ UMTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    RF5187

    Abstract: RF5187PCBA-41X
    Text: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It


    Original     		PDF RF5187 14GHz RF5187 2140MHz, RF5187PCBA-41X

    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


    Original     		PDF SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    UGF21090

    Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		PDF UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100ain 28VDC, 2140MHz 84MHz UGF21090 UGF21090F UGF21090P 50 watts amplifier 10mhz

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) 28VSpace 28VDC 350mA 2140Mhz 84MHz UGF21030F UGF21030 UGF21030P 300GP

    Untitled

    Abstract: No abstract text available
    Text: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features        Applications    Battery Powered 3G


    Original     		PDF RF3229 00mmx6 00mmx1 GSM850/EGSM900/DCS/ J-STD-033. RF3229TR13 RF3229TR7 DS110819

    Untitled

    Abstract: No abstract text available
    Text: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS Package Style: Module, 7.00 mm x 6.00 mm x 1.00 mm Features             Three High Linearity, Low Loss, UMTS Switch Ports UMTS Port to Port Isolation > 20 dB Improved Power Flatness Into


    Original     		PDF RF3229 GSM850 EGSM900 DCS1800 PCS1900 GSM850/EGSM900/DCS/ RF3229 RF3229TR13 RF3229TR7 DS110124

    Untitled

    Abstract: No abstract text available
    Text: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2        Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/


    Original     		PDF RF3229 00mmx6 00mmx1 GSM850 EGSM900 DCS1800 PCS1900 J-STD-033. RF3229TR13 RF3229TR7

    C1237

    Abstract: C1220 TRANSISTOR C1201 C1220 C1221 CX65101 CX65105 CX65105-11
    Text: DATA SHEET CX65105: 1700 – 2200 MHz Linear Power Amplifier Applications Description • PCS/DCS/UMTS Skyworks CX65105 Power Amplifier PA is a fully matched, 8-pin Leadless Chip Carrier (LCC) surface mount module, developed for Personal Communications System (PCS), Digital Communications


    Original     		PDF CX65105: CX65105 101476F C1237 C1220 TRANSISTOR C1201 C1220 C1221 CX65101 CX65105-11

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET CX65101: 1700 – 2200 MHz Linear Power Amplifier Applications Description • PCS/DCS/UMTS Skyworks CX65101 Power Amplifier PA is a fully matched, 8-pin Leadless Chip Carrier (LCC) surface mount module, developed for Personal Communications System (PCS), Digital Communications


    Original     		PDF CX65101: CX65101 101472F

    Untitled

    Abstract: No abstract text available
    Text: RF5187 LOW POWER LINEAR AMPLIFIER Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It


    Original     		PDF RF5187 14GHz RF5187 2140MHz

    Untitled

    Abstract: No abstract text available
    Text: RF5187 LOW POWER LINEAR AMPLIFIER Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It


    Original     		PDF RF5187 14GHz RF5187 2140MHz

    MICROWAVE OVEN PANASONIC

    Abstract: ECJ-1VB1H102K GRM1885C1H101JA01D RMPA2271
    Text: PRELIMINARY RMPA2271 WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector Features General Description • Temperature compensated, integrated power detector with >20dB dynamic range ■ 41% WCDMA efficiency at +28dBm average output power


    Original     		PDF RMPA2271 28dBm 1980MHz RMPA2271 MICROWAVE OVEN PANASONIC ECJ-1VB1H102K GRM1885C1H101JA01D

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P

    RF3230

    Abstract: 3g UMTS signal Schematic Diagram LOG RX1 DCS1800 EGSM900 GSM900 PCS1900 transistor for power amplifier freq umts PCL 86
    Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 „ „ „ „ „ „ „ „ Applications „ „ „ Battery Powered 3G Handsets GSM850/EGSM900/DCS/ PCS Products


    Original     		PDF RF3230 00mmx6 00mmx1 GSM850/EGSM900/DCS/ EIA-481. DS100406 RF3230 3g UMTS signal Schematic Diagram LOG RX1 DCS1800 EGSM900 GSM900 PCS1900 transistor for power amplifier freq umts PCL 86

    RF3230

    Abstract: No abstract text available
    Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features         Applications    Battery Powered 3G


    Original     		PDF RF3230 00mmx6 00mmx1 GSM850/EGSM900/DCS/ EIA-481. DS110216 RF3230

    3g UMTS signal Schematic Diagram

    Abstract: No abstract text available
    Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/


    Original     		PDF RF3230 00mmx6 00mmx1 GSM850 EGSM900 DCS1800 PCS1900 RF3230TR13 RF3230TR7 EIA-481. 3g UMTS signal Schematic Diagram

    Untitled

    Abstract: No abstract text available
    Text: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It


    Original     		PDF RF5187 14GHz RF5187 2140MHz

    UGF21030F

    Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21030 UGF21030F Cree Microwave MRF21030 UGF21030P 21701

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET CX65105: 1700 – 2200 MHz Linear Power Amplifier Applications Description • PCS/DCS/UMTS Skyworks’ CX65105 Power Amplifier PA is a fully matched, 8-pin Leadless Chip Carrier (LCC) surface mount module, developed for Personal Communications System (PCS), Digital


    Original     		PDF CX65105: CX65105 101476E