TMC57253
Abstract: No abstract text available
Text: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image
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TC254P
244-PIXEL
SOCS060B
TMC57253
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TMC57253
Abstract: ccd color Linear Image Sensor TC254P TMC57750 CM500 BY121 SRG-10 serial register ABG CHIP TRANSISTOR TOPPAN BARRIER
Text: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image
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TC254P
244-PIXEL
SOCS060B
TMC57253
ccd color Linear Image Sensor
TC254P
TMC57750
CM500
BY121
SRG-10 serial register
ABG CHIP TRANSISTOR
TOPPAN BARRIER
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IRU1205
Abstract: IRU1205-18 IRU1205-18CL IRU1205-25 IRU1205-28 IRU1205-30 IRU1205-33 IRU1205-36 IRU1205CL AT30
Text: Data Sheet No. PD94133 IRU1205 IRU1205-18 / IRU1205-25 / IRU1205-28 IRU1205-30 / IRU1205-33 / IRU1205-36 300mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES SOT-23 Package Stable with 2.2mF Ceramic Capacitor 1% Voltage Reference Accuracy
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PD94133
IRU1205
IRU1205-18
IRU1205-25
IRU1205-28
IRU1205-30
IRU1205-33
IRU1205-36
300mA
OT-23
IRU1205
IRU1205-18CL
IRU1205-28
IRU1205-36
IRU1205CL
AT30
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ABG CHIP TRANSISTOR
Abstract: CCD IMAGE TC255P TMC57253 ABG TRANSISTOR ccd image sensor SN761210 SN761210FR TMC57253DSB TMC57750
Text: TC255P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS057 – JUNE 1996 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost B/W TV Applications 324 H x 243(V) Active Elements in Image Sensing Area 10-µm Square Pixels
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TC255P
244-PIXEL
SOCS057
ABG CHIP TRANSISTOR
CCD IMAGE
TC255P
TMC57253
ABG TRANSISTOR
ccd image sensor
SN761210
SN761210FR
TMC57253DSB
TMC57750
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC MME D B l l M n t b 0D0Ô33S T H A V A LNO-550 Low N oise Varactor-Tuned O scillator E E C -"T -S C u C A FEATURES • Low FM/Pha$e Noise • 10 mW Minimum Output Power • Low Cost • Reliable Thin-Film Hybrid Construction • Hermetic TO-8 Miniature Package
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LNO-550
LNO-550
50-ohm
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M54533P
Abstract: 251C relay 101-100 154 Diode Mitsubishi VKST
Text: • b3E b EM^Û E? D G ISG IB M ITSU B ISH I DGTL f iñb ■ M I T 3 MITSUBISHI BIPOLAR DIGITAL ICs M54533P LOGIC 6-UNIT 320mA TRANSISTOR ARRAY W ITH CLAMP DIODE AND STROBE DESCRIPTION T h e M 54533P, 6 -c h a n n e l sink driver, consists of 12 N P N tran
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D01SQ1B
M54533P
320mA
M54533P,
320mA
M54533P
TS-751C!
251C
relay 101-100
154 Diode Mitsubishi
VKST
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Untitled
Abstract: No abstract text available
Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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D014b33
BUZ63_
bbS3T31
T-39-11
BUZ63
14h3fl
III11
i111111
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FT5764M
Abstract: FT5764 ft5767m FT57 T-43-25
Text: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature
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D01bfc
FT5764M,
FT5767M
Ta-25
Vcc-30V
c/500
FT5764M
FT5764
ft5767m
FT57
T-43-25
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transistor bc 325
Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Text: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.
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h21e-
transistor bc 325
transistor bf 179
Transistor BC 177
TO-18 BC-177 pnp transistor
transistor BC 324
transistor bc 102
low noise transistor bc 179
transistor bc 321
BC 177 transistor
BC 109 Transistor
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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photo transister
Abstract: PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification OC340
Text: O K I electronic components OC340 PHOTO COUPLER GENERAL DESCRIPTION The OC34C is a photo coupler formed by combining a GaAs infrared light emitting diode and a phototransistor. Encased in a 6-pin plastic package, the CKZ340 is suitable for such applications as an
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QC340_
OC34C)
OC340
E86831
b724E40
OC340
photo transister
PHOTO TRANSISTOR
transister
"photo transistor"
photo coupler
photo coupler specification
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bt 44a
Abstract: Transistor 2TY npn photo transistor P042A
Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life
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P040/44A
74bbflSl
GDD4b74
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
74bbfl51
bt 44a
Transistor 2TY
npn photo transistor
P042A
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tfk 325
Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
Text: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A
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Untitled
Abstract: No abstract text available
Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage
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CA3410A,
CA3410
CA3410E
CA3410
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Untitled
Abstract: No abstract text available
Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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PO40/44A
OT90B
PO40/44A
P040A,
P042A,
P043A,
P044A
satur10'
bbS3T31
0D35S50
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Untitled
Abstract: No abstract text available
Text: fZ 7 S G S -T H O M S O N “ [» ^ lU O T Iw r e s 7# L 7 8 M 0 0 A B S E R IE S PRECISION 500mA REGULATORS • OUTPUT CURRENT UP TO 0.5A ■ OUTPUT VO LTAGES OF 5 ; 6 ; 8 ; 12 ; 15 ; 18 ; 20 ; 24V ■ THERM AL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION
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500mA
L78M00AB
O-220
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Untitled
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E
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s2502L1V
PS2502L-1
PS2502L-2
PS2502L-4
b427525
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
46SS452
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Untitled
Abstract: No abstract text available
Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC30S
O-22QAB
S54S2
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KF 517
Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"
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III/18/379
KF 517
transistor KF 517
Transistoren DDR
service-mitteilungen
KF517
transistor gt 322 b1
Ziphona
bauelemente DDR
servicemitteilungen
KT326B
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h22al
Abstract: H22A1 k 1094 transistor transistor 736 H22A2 354A-01 H21A3 IR h22a1 H21A1 H21A2
Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA mmmmmmmmmmmm Slotted O ptical S w itches T ra n sisto r O utput Each d e v ice c o n s is ts o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e fa c in g a s ilic o n N P N p h o to tra n s is to r in a m o ld e d p la stic h o u s in g . A s lo t in th e h o u s in g betw een th e e m itte r
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ITC117
Abstract: No abstract text available
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES
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ITC117P/ITC135P/ITC137P
3750Vrm
ITC117P/ITC135P/1TC137P
ITC117
P/ITC135
P/ITC137
ITC117P/ITC135P/ITC137P
1-800-CP
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC Q 4ME D ^ J ^ N T E B C lm n b b GGOTU? =i B A V A ^ UTO/UTC 504 Series Thln-Fllm Cascadable Amplifier a «0 5 0 . MHZ FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply
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24-Volt
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2SK324
Abstract: f664
Text: TOSHIBA {DISCRETE/OPTO} ^ ß F I ^ D i T a S D 9097250 TOSHIBA DISCRETE/OPTO {/asìùhi D D l b b m 99D f6641 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 4 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in m m
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f6641
2SK324
f664
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