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    TRANSISTOR IR 324 A Search Results

    TRANSISTOR IR 324 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IR 324 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TMC57253

    Abstract: No abstract text available
    Text: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image


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    TC254P 244-PIXEL SOCS060B TMC57253 PDF

    TMC57253

    Abstract: ccd color Linear Image Sensor TC254P TMC57750 CM500 BY121 SRG-10 serial register ABG CHIP TRANSISTOR TOPPAN BARRIER
    Text: TC254P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications 324 H x 243(V) Active Elements in Image


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    TC254P 244-PIXEL SOCS060B TMC57253 ccd color Linear Image Sensor TC254P TMC57750 CM500 BY121 SRG-10 serial register ABG CHIP TRANSISTOR TOPPAN BARRIER PDF

    IRU1205

    Abstract: IRU1205-18 IRU1205-18CL IRU1205-25 IRU1205-28 IRU1205-30 IRU1205-33 IRU1205-36 IRU1205CL AT30
    Text: Data Sheet No. PD94133 IRU1205 IRU1205-18 / IRU1205-25 / IRU1205-28 IRU1205-30 / IRU1205-33 / IRU1205-36 300mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES SOT-23 Package Stable with 2.2mF Ceramic Capacitor 1% Voltage Reference Accuracy


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    PD94133 IRU1205 IRU1205-18 IRU1205-25 IRU1205-28 IRU1205-30 IRU1205-33 IRU1205-36 300mA OT-23 IRU1205 IRU1205-18CL IRU1205-28 IRU1205-36 IRU1205CL AT30 PDF

    ABG CHIP TRANSISTOR

    Abstract: CCD IMAGE TC255P TMC57253 ABG TRANSISTOR ccd image sensor SN761210 SN761210FR TMC57253DSB TMC57750
    Text: TC255P 336- x 244-PIXEL CCD IMAGE SENSOR SOCS057 – JUNE 1996 • • • • • • • • • • • • • • • Medium-Resolution, Solid-State Image Sensor for Low-Cost B/W TV Applications 324 H x 243(V) Active Elements in Image Sensing Area 10-µm Square Pixels


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    TC255P 244-PIXEL SOCS057 ABG CHIP TRANSISTOR CCD IMAGE TC255P TMC57253 ABG TRANSISTOR ccd image sensor SN761210 SN761210FR TMC57253DSB TMC57750 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC MME D B l l M n t b 0D0Ô33S T H A V A LNO-550 Low N oise Varactor-Tuned O scillator E E C -"T -S C u C A FEATURES • Low FM/Pha$e Noise • 10 mW Minimum Output Power • Low Cost • Reliable Thin-Film Hybrid Construction • Hermetic TO-8 Miniature Package


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    LNO-550 LNO-550 50-ohm PDF

    M54533P

    Abstract: 251C relay 101-100 154 Diode Mitsubishi VKST
    Text: • b3E b EM^Û E? D G ISG IB M ITSU B ISH I DGTL f iñb ■ M I T 3 MITSUBISHI BIPOLAR DIGITAL ICs M54533P LOGIC 6-UNIT 320mA TRANSISTOR ARRAY W ITH CLAMP DIODE AND STROBE DESCRIPTION T h e M 54533P, 6 -c h a n n e l sink driver, consists of 12 N P N tran­


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    D01SQ1B M54533P 320mA M54533P, 320mA M54533P TS-751C! 251C relay 101-100 154 Diode Mitsubishi VKST PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


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    D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111 PDF

    FT5764M

    Abstract: FT5764 ft5767m FT57 T-43-25
    Text: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature


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    D01bfc FT5764M, FT5767M Ta-25 Vcc-30V c/500 FT5764M FT5764 ft5767m FT57 T-43-25 PDF

    transistor bc 325

    Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
    Text: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.


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    h21e- transistor bc 325 transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor PDF

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB PDF

    photo transister

    Abstract: PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification OC340
    Text: O K I electronic components OC340 PHOTO COUPLER GENERAL DESCRIPTION The OC34C is a photo coupler formed by combining a GaAs infrared light emitting diode and a phototransistor. Encased in a 6-pin plastic package, the CKZ340 is suitable for such applications as an


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    QC340_ OC34C) OC340 E86831 b724E40 OC340 photo transister PHOTO TRANSISTOR transister "photo transistor" photo coupler photo coupler specification PDF

    bt 44a

    Abstract: Transistor 2TY npn photo transistor P042A
    Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life


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    P040/44A 74bbflSl GDD4b74 OT90B P040/44A P040A, P042A, P043A, P044A 74bbfl51 bt 44a Transistor 2TY npn photo transistor P042A PDF

    tfk 325

    Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
    Text: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage


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    CA3410A, CA3410 CA3410E CA3410 PDF

    Untitled

    Abstract: No abstract text available
    Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.


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    PO40/44A OT90B PO40/44A P040A, P042A, P043A, P044A satur10' bbS3T31 0D35S50 PDF

    Untitled

    Abstract: No abstract text available
    Text: fZ 7 S G S -T H O M S O N “ [» ^ lU O T Iw r e s 7# L 7 8 M 0 0 A B S E R IE S PRECISION 500mA REGULATORS • OUTPUT CURRENT UP TO 0.5A ■ OUTPUT VO LTAGES OF 5 ; 6 ; 8 ; 12 ; 15 ; 18 ; 20 ; 24V ■ THERM AL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION


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    500mA L78M00AB O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E


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    s2502L1V PS2502L-1 PS2502L-2 PS2502L-4 b427525 PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents


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    IRFE430 JANTX2N6802U JANTXV2N6802U MIL-PRF-19500/557] 500Volt, 46SS452 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    IRG4BC30S O-22QAB S54S2 PDF

    KF 517

    Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
    Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"


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    III/18/379 KF 517 transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B PDF

    h22al

    Abstract: H22A1 k 1094 transistor transistor 736 H22A2 354A-01 H21A3 IR h22a1 H21A1 H21A2
    Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA mmmmmmmmmmmm Slotted O ptical S w itches T ra n sisto r O utput Each d e v ice c o n s is ts o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e fa c in g a s ilic o n N P N p h o to tra n s is to r in a m o ld e d p la stic h o u s in g . A s lo t in th e h o u s in g betw een th e e m itte r


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    PDF

    ITC117

    Abstract: No abstract text available
    Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES


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    ITC117P/ITC135P/ITC137P 3750Vrm ITC117P/ITC135P/1TC137P ITC117 P/ITC135 P/ITC137 ITC117P/ITC135P/ITC137P 1-800-CP PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC Q 4ME D ^ J ^ N T E B C lm n b b GGOTU? =i B A V A ^ UTO/UTC 504 Series Thln-Fllm Cascadable Amplifier a «0 5 0 . MHZ FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • High Output Power: +21.0 dBm Typ • Temperature Compensated • 24-Volt Supply


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    24-Volt PDF

    2SK324

    Abstract: f664
    Text: TOSHIBA {DISCRETE/OPTO} ^ ß F I ^ D i T a S D 9097250 TOSHIBA DISCRETE/OPTO {/asìùhi D D l b b m 99D f6641 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 4 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in m m


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    f6641 2SK324 f664 PDF