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    TRANSISTOR IRF730 Search Results

    TRANSISTOR IRF730 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IRF730 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor IRF730

    Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
    Text: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V


    Original     		IRF730 O220AB) IRF730 transistor IRF730 PHP3N50 PHP3N60 PHP5N40 PDF

    MOSFET 400V TO-220

    Abstract: transistor IRF730 400v 5a mosfet IRF73 TRANSISTOR mosfet 400V switching transistor Diode 400V 5A maximum idss transistor mosfet MOSFET 400V
    Text: INCHANGE MOSFET IRF730 N-channel mosfet transistor ‹ Features ・With TO-220 package ・Simple drive requirements ・Fast switching ・VDSS=400V; RDS ON ≤1.0Ω;ID=5.5A ・1.gate 2.drain 3.source 123 ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		IRF730 O-220 O-220 MOSFET 400V TO-220 transistor IRF730 400v 5a mosfet IRF73 TRANSISTOR mosfet 400V switching transistor Diode 400V 5A maximum idss transistor mosfet MOSFET 400V PDF

    irf730

    Abstract: No abstract text available
    Text: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    OCR Scan     		IRF730 irf730 PDF

    Untitled

    Abstract: No abstract text available
    Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF730 0( 2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C I • Drain Source Voltage: VDss= 400V(Min) OCD


    Original     		IRF730 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730 Data Sheet Title F73 bt 5A, 0V, m, July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified


    Original     		IRF730 IRF730 O-220AB TB334 PDF

    transistor IRF730

    Abstract: TA17414 IRF730 TB334 Application of irf730
    Text: IRF730 Data Sheet January 2002 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		IRF730 TA17414. 00opment. transistor IRF730 TA17414 IRF730 TB334 Application of irf730 PDF

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source


    OCR Scan     		IRF730 156x156 PDF

    SEC IRF730

    Abstract: FET IRF730 oni 350 D84DQ2 IRF730 irf731
    Text: [ H IRF730,731 D84DQ2,Q1 f F 5.5 AMPERES 400, 350 VOLTS RDS ON = 10 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF730 D84DQ2 00A///sec, 250MA, SEC IRF730 FET IRF730 oni 350 irf731 PDF

    transistor IRF730

    Abstract: IRF730 TESTING
    Text: I SCS-THOMSON •[LIOTMIg IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x1 56 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A


    OCR Scan     		IRF730 C-0072 transistor IRF730 IRF730 TESTING PDF

    IRF730

    Abstract: TA17414 TB334
    Text: IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		IRF730 TA17414. IRF730 TA17414 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt­ age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and


    OCR Scan     		IRF730 O-220) GlD273b PDF

    IRF730

    Abstract: IRF732 mtm5n35 GR 733
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF730 IRF731 IRF732 IRF733 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T h e se T M O S P o w e r FETs are d es igne d fo r high v o lta g e , high speed p o w e r sw itch in g ap p lication s


    OCR Scan     		IRF730 IRF731 IRF732 IRF733 IBF731 mtm5n35 GR 733 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    AN1001

    Abstract: No abstract text available
    Text: PD - 94976 IRF730APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRF730APbF AN1001) O-220AB AN1001 PDF

    IRF730A

    Abstract: SiHF730A-E3 SiHF730A flyback xfmr 3.5 mh
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A O-220 18-Jul-08 IRF730A SiHF730A-E3 flyback xfmr 3.5 mh PDF

    AN1001

    Abstract: IRF730A
    Text: PD - 91902A IRF730A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		1902A IRF730A AN1001) O-220AB AN1001 IRF730A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91902 IRF730A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PD-91902 IRF730A AN1001) O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		IRF730A, SiHF730A AN1001) O-220 12-Mar-07 PDF

    AN1001

    Abstract: No abstract text available
    Text: PD - 94976 IRF730APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRF730APbF AN1001) O-220AB AN1001 PDF

    AN1001

    Abstract: IRF730A SiHF730A SiHF730A-E3
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		IRF730A, SiHF730A AN1001) O-220 18-Jul-08 AN1001 IRF730A SiHF730A-E3 PDF

    IRF730AL

    Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 18-Jul-08 IRF730AL IRF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		IRF730AS, SiHF730AS IRF730AL, SiHF730AL O-262) O-263) 12-Mar-07 flyback xfmr 3.5 mh PDF

    TRANSISTOR marking ar code

    Abstract: AN1001 AN-994 IRF730A IRL3103L
    Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PD-95114 IRF730AS/LPbF AN1001) O-262 IRF730A AN-994. TRANSISTOR marking ar code AN1001 AN-994 IRL3103L PDF