vhf high gain transistor
Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
Text: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i
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2SC605
2SC605,
200MHz)
530MHz
2SC606
2SC605
vhf high gain transistor
F VHF amplifier
VHF amplifier circuit
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transistor r 606 j
Abstract: transistor s46 sfh606 opto coupling transistor Siemens S35
Text: SIEMENS C M P N T S i OPTO MME D Ô23fe>32b QOGSGbti 5 B S I E X SIEMEMS SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR •Hl- S3 Package Dimensions In Inches mm •307 (7.B) .291 (7.4) 1 .256(6.5) 548(6.3) E E E 1 a 3 3 Ï J base MO D E E
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Ass25eC
transistor r 606 j
transistor s46
sfh606
opto coupling transistor
Siemens S35
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B550 transistor
Abstract: SFH606
Text: SIEMENS AKTIEN6ESELLSCHAF 47E J> • SIEM ENS fl23Sb05 0 0 2 7 2 fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%
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fl23Sb05
SFH606
B550 transistor
SFH606
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B550 transistor
Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Text: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%
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235b05
B550 transistor
diode 606
transistor r 606 j
optocouple
VF125
Not3
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LZ2316AJ
Abstract: 500C LZ2316AR
Text: SHARP SPEC No. ISSUE: E L 0 9 9 1 6 5 A Jan. 29 1998 To ; S P E C I F I C A T I O N S Product Type Model No. 1/3 type solid state B/W imaging device for EIA system Versatile output for mirror and normal image LZ2316AJ (LZ2316AR) j&This specifications contains 22 pages including the cover and appendix.
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EL099165A
LZ2316AJ
78TYP.
LZ2316AJ
LZ2316AR
M00ULE
500C
LZ2316AR
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DH320
Abstract: LZ2416J
Text: SHARP SPEC No. ISSUE: E L 0 9 9 2 4 0 A Oct. 29 1997 To ; REFERENCE S P Product Type Model No. E C I F I C A T T O N S 1/4 type solid state B/W imaging device for EIA system Versatile output for mirror and normal image LZ2 4 1 6 J ^ T h i s specifications contains 22 pages including the cover and appendix.
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EL099240A
LZ241
DH320
LZ2416J
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transistor pr 606 j
Abstract: fah1 13B1 LR38585 LZ2316AR
Text: SHARP LZ2316AR BACK LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels
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LZ2316AR
LZ2316AR
transistor pr 606 j
fah1
13B1
LR38585
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2SC4627
Abstract: LR38585 LZ2316AR T1RD2
Text: BACK LZ2316AR LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION PIN CONNECTIONS The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels
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LZ2316AR
LZ2316AR
16-PIN
2SC4627
LR38585
T1RD2
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LR38580
Abstract: LZ2315A LZ2316AR LZ2315 T1RD2
Text: LZ2315A/LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type CCD Area Sensors with 270 k Pixels LZ2315A/ LZ2316AR DESCRIPTION PIN CONNECTIONS The LZ2315A/LZ2316AR are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices) driven
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LZ2315A/LZ2316AR
LZ2315A/
LZ2316AR
LZ2315A/LZ2316AR
LZ2315A
LZ2316AR)
16-PIN
LR38580
LZ2316AR
LZ2315
T1RD2
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TOP 242 PN
Abstract: 2SC4627 2SC4716 LR38580 LZ2416J
Text: LZ2416J LZ2416J Dual-power-supply 5 V/12 V Operation 1/4-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION PIN CONNECTIONS The LZ2416J is a 1/4-type (4.5 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply . With approximately 270 000 pixels
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LZ2416J
LZ2416J
14-PIN
TOP 242 PN
2SC4627
2SC4716
LR38580
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B159 diode
Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Text: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s
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6DI50B-050
E82988
B-160
B159 diode
le50a
6di50b
B-159
M606
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Untitled
Abstract: No abstract text available
Text: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0
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2SD1563
15Jil
2SB1086Â
2SB1086.
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DS11
Abstract: g10q
Text: ^¡IB5 DT451 A N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /L IT E M ÏI7 I PO W E R S E M IC O N D U C TO R I Features High Cell Density DMOS Technology Low O n-State R esistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance
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DT451
OT-223
OT-223
125-C
DS451
DS11
g10q
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Untitled
Abstract: No abstract text available
Text: Transistors I NPN General Purpose Transistor B C 848B W /B C 848B /B C 848C • F e a tu re s • E x te rn a l dim ensions <Units : mm 1 ) B V ceo< 3 0V 0c= 1m A) BC848BW 2 J C o m p le m e n ts the B C 8 5 8 6 /B C 8 5 8 B W . • P a c k a g e , marking and packaging specifications
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BC848BW
BC848BW
BC848B
BC846C
BC848C
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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photo transistor MEL 11
Abstract: No abstract text available
Text: SHARP ELEK/ M E LE C 1SE D IV 0 § a i â Q 7 <l â 0 0 Û1 S T 7 1 I LZ2111J C C D Area Sensor for 1 /2" N TSC Color T-41-55 LZ2111J • CCD Area Sensor for 1/2" NTSC Color Description Pin Connections The LZ2111J is a 1/2 inch solid-state image sensor comprised of PN-junction photodiodes and
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LZ2111J
T-41-55
l/1000th
l/2000th
LZ2111J
T-41-55
photo transistor MEL 11
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6D120C-050
Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.
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EVF33T-040
6DM0A-050
EVF31T-050A
6DI15A-050
150M603
6DI10A-120
6DI15A-120
6DI30A-120
2DI200A-020
1DI500A-030
6D120C-050
3 phase inverter circuits
M601
6DI30A-050
6DI50A-055
6D120
IC M605
6DI50B-050
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bfq34 application note
Abstract: ON4497 BFQ34 sf 122 transistor
Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a
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DD31S5Ã
BFQ34
OT122A
ON4497)
bfq34 application note
ON4497
BFQ34
sf 122 transistor
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Untitled
Abstract: No abstract text available
Text: T D Digital transistor, NPN, with 2 resistors 1 2 3 E K Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTD123EK; F22 DTD123EK (SMT3) r a built-in bias resistor allows inverter circuit configuration without external
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SC-59)
DTD123EK;
DTD123EK
29x02
19x02
DTD123EK
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2SD588
Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD593
2SD596
2SD608
Ir-25
2SD610
2SD588
2sd586
transistor 2sD586
2sd588 data
2SD587
transistor 2SD587
2SD593
2SB601
2SD560
2SD571
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2n5088 transistor
Abstract: mps8097 2N5088 LC100A I2921 MPS-8097
Text: . SAMSUNG SEMI C O NDU CT OR INC MPS8097 14E D | 7^4142 000733b 5 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C oltector-Em ltter Voltage: Vc*o=40V • C o lle cto r D issipa tion : P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic
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000735b
MPS8097
625mW
2N5088
100/jA,
10KSJ
2n5088 transistor
LC100A
I2921
MPS-8097
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KSP44
Abstract: LB 0,5 mA transistor LA 350 npn transistor 400V KSP45 transistor KSP44
Text: NPN EXITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAGE TRANSISTOR • Colleclor-Emitter Voltage: VCE0 = KSP44: 400V KSP45: 350V • Collector Dissipation: Pc max = 625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit K SP44 500 V K SP45 400 V K SP44 400 V
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KSP44/45
KSP44:
KSP45:
625mW
KSP44
KSP45
KSP44/45
KSP44
LB 0,5 mA transistor
LA 350
npn transistor 400V
KSP45
transistor KSP44
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6d120c-050
Abstract: 6d150c-050 1DI500A-030 6D115A-050 6D175A-050 all type transistor equivalent 6DI30B-050 m605 6D130A-120 6D130A
Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.
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EVF33T-040
6DM0A-050
EVF31T-050A
6DI15A-050
6DI15A-120
6DI30A-120
2DI200A-020
1DI500A-030
6d120c-050
6d150c-050
6D115A-050
6D175A-050
all type transistor equivalent
6DI30B-050
m605
6D130A-120
6D130A
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6d120c-050
Abstract: 6D175A-050 6d150c-050 1DI500A-030 6D115A-050 6DI30B-050 6D130A-120 all type transistor equivalent M605 6D130A
Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.
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EVF33T-040
6DM0A-050
EVF31T-050A
6DI15A-050
6DI15A-120
6DI30A-120
2DI200A-020
1DI500A-030
6d120c-050
6D175A-050
6d150c-050
6D115A-050
6DI30B-050
6D130A-120
all type transistor equivalent
M605
6D130A
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