TRANSISTOR R06 Search Results

TRANSISTOR R06 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR R06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FZ 600 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces ¡c 1200 V 6 00 A Thermal properties RfhJC DC, pro Baustein / per module RlthCK pro Baustein / per module	OCR Scan	R06KF2/3 FZ600R12KF 600ft 3HD32R7 0002G17	PDF
Untitled Abstract: No abstract text available Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties	OCR Scan	FF500	PDF
transistor KF Abstract: No abstract text available Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,175 C/W Rthjc DC, pro Zweig / per arm	OCR Scan	125-C, transistor KF	PDF
ODD1173 Abstract: FF200R06KF2 FF200R06KF FF500 15fis Scans-0031044 FF200R06 Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 0,16 DC, pro Zweig / per arm 0,03 pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties V CES Maximum rated values	OCR Scan	00R600 FF20DN FF500 ODD1173 FF200R06KF2 FF200R06KF 15fis Scans-0031044 FF200R06	PDF
Untitled Abstract: No abstract text available Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties	OCR Scan	FF2MR06KF3.	PDF
Untitled Abstract: No abstract text available Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties	OCR Scan	ZWR06KF3/5 3MQ32T?	PDF
vqe 24 d Abstract: VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d Text: FF 75 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm al properties Therm ische Eigenschaften 0,175 C/W Rthjc DC, pro Baustein / per module 0,35 °C/W DC, pro Zweig / per arm 0,06 “C/W RthCK pro B a u ste in /p e r module	OCR Scan	FF7SR06KF2IÃ 125-C, vqe 24 d VQE 24 vqe 14 vqe 24 e VQE 13 we vqe 24 d	PDF
kf 202 transistor Abstract: No abstract text available Text: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V qes Maximum rated values 600 V 100 A le Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm	OCR Scan	12EFC, kf 202 transistor	PDF
KF 35 transistor Abstract: No abstract text available Text: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 100 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm	OCR Scan		PDF
LDA110 Abstract: optocoupler bi-directional Text: LDA110 Optocoupler, Bidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1	Original	LDA110 LDA110 100mA 3750Vrms E76270 DS-LDA110-R06 optocoupler bi-directional	PDF
LDA111 Abstract: No abstract text available Text: LDA111 Optocoupler, Unidirectional Input Darlington-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1	Original	LDA111 LDA111 100mA 3750Vrms E76270 DS-LDA111-R06	PDF
LDA100 Abstract: LDA100STR B0907 Text: LDA100 Optocoupler, Bidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Units VP % V mA Description The LDA100 is a bidirectional-input optocoupler	Original	LDA100 LDA100 3750Vrms DS-LDA100-R06 LDA100STR B0907	PDF
LDA101 Abstract: No abstract text available Text: LDA101 Optocoupler, Unidirectional Input Single-Transistor Output INTEGRATED CIRCUITS DIVISION Parameter Breakdown Voltage BVCEO Current Transfer Ratio Typical Saturation Voltage Input Control Current Rating 30 300 0.5 1 Units VP % V mA Description The LDA101 is a unidirectional-input optocoupler	Original	LDA101 LDA101 3750Vrms DS-LDA101-R06	PDF
LN800 Abstract: C2E1 F400 diode f400 Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties	OCR Scan	D0DD25fl 34D32CI7 LN800 C2E1 F400 diode f400	PDF

very simple walkie talkie circuit diagram Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23	PDF
double TRANSISTOR SMD MARKING CODE mc Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578	PDF
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H	PDF
Motorola transistor smd marking codes Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,	Original		PDF
2SK43 transistor Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163 Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written	Original		PDF
Motorola transistor smd marking codes Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become	Original		PDF
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
circuit diagram of GSM based home automation system Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF

TRANSISTOR R06 Search Results

TRANSISTOR R06 Result Highlights (5)

TRANSISTOR R06 Datasheets Context Search

Untitled

Untitled

transistor KF

ODD1173

Untitled

Untitled

vqe 24 d

kf 202 transistor

KF 35 transistor

LDA110

LDA111

LDA100

LDA101

LN800

very simple walkie talkie circuit diagram

double TRANSISTOR SMD MARKING CODE mc

MPF102 spice model

Motorola transistor smd marking codes

2SK43 transistor

Motorola transistor smd marking codes

schematic diagram tv sony 21 trinitron

UPC8236

circuit diagram of GSM based home automation system

BB 509 varicap diode