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    TRANSISTOR R1010 Search Results

    TRANSISTOR R1010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R1010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SAR522EB

    Abstract: 2sar522m
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522UB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A PDF

    2SCR522M

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523UB 2SAR523M 2SAR523EB R1010A PDF

    2SAR523EB

    Abstract: 2SCR523
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A 2SCR523 PDF

    2SCR522M

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522UB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A PDF

    2SCR523

    Abstract: 2SCR523EB
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523UB R1010A 2SCR523 PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A PDF

    2SB1237

    Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
    Text: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1


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    2SA1515S 2SB1237 15Min. 65Max. 2SA1515S 500mA 2SD1858 SC-72 R1010A 2SB1237 TRansistor 2SB1237 data 2SD1858 SC-72 PDF

    1AM5

    Abstract: 2SB1240 2SB1182 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor


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    2SD1758 2SD1862 2SD1758 2SB1182 2SB1240 65Max. SC-63 R1010A 1AM5 2SB1240 2SD1862 PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor isolated dual transistors IMX25 Dimensions (Unit : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 Structure Epitaxial planar type NPN silicon transistor (2) (1) +0.1 0.3 −0.05 (3) 0 to 0.1 +0.1 0.15 −0.06


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    IMX25 SC-74 2SD2704K R1010A PDF

    IMX25

    Abstract: 2SD2704K T110
    Text: General purpose transistor isolated dual transistors IMX25 Dimensions (Unit : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 Structure Epitaxial planar type NPN silicon transistor (2) (1) +0.1 0.3 −0.05 (3) 0 to 0.1 +0.1 0.15 −0.06


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    IMX25 SC-74 2SD2704K R1010A IMX25 T110 PDF

    IMX25

    Abstract: 2SD2704K T110 2SD27
    Text: General purpose transistor isolated dual transistors IMX25 Dimensions (Unit : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 Structure Epitaxial planar type NPN silicon transistor (2) (1) +0.1 0.3 −0.05 (3) 0 to 0.1 +0.1 0.15 −0.06


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    IMX25 SC-74 2SD2704K R1010A IMX25 T110 2SD27 PDF

    Untitled

    Abstract: No abstract text available
    Text: High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. Dimensions (Unit : mm) 2SC5659 1.2 0.8


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    300MHz) 2SC5659 2SC4618 2SC4098 2SC2413K 2SC5659 2SC4098 SC-75A 2SC4098, PDF

    2SC2413K

    Abstract: 2SC4098 2SC4618 2SC5659 SC-75A T106 T146 2SC2413
    Text: High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Dimensions (Unit : mm) Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. 2SC5659 1.2 0.8


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    300MHz) 2SC5659 2SC4618 2SC4098 2SC2413K 2SC5659 2SC4098 SC-75A 2SC4098, 2SC2413K SC-75A T106 T146 2SC2413 PDF

    Untitled

    Abstract: No abstract text available
    Text: High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. Dimensions (Unit : mm) 2SC5659 1.2 0.8


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    300MHz) 2SC5659 2SC4618 2SC4098 2SC2413K 2SC5659 2SC4098 SC-75A 2SC4098, PDF

    2SA1576UB

    Abstract: 2SC4081UB
    Text: General purpose small signal amplifier 50V, 0.15A 2SC4081UB Dimensions (Unit : mm) Applications General purpose small signal amplifier UMT3F Structure NPN silicon epitaxial planar transistor 2.0 0.9 0.53 0.32 (3) 0.53 0.425 2.1 1.25 0.425 Features


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    2SC4081UB 2SA1576UB. R1010A 2SA1576UB 2SC4081UB PDF

    2SC4081UB

    Abstract: No abstract text available
    Text: General purpose small signal amplifier 50V, 0.15A 2SC4081UB Applications General purpose small signal amplifier Dimensions (Unit : mm) UMT3F Structure NPN silicon epitaxial planar transistor 2.0 0.9 0.53 0.32 (3) 0.53 0.425 2.1 1.25 0.425 Features


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    2SC4081UB 2SA1576UB. R1010A 2SC4081UB PDF

    2SB1238

    Abstract: No abstract text available
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A PDF

    Untitled

    Abstract: No abstract text available
    Text: AEC-Q101 Qualified High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA Dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 0.2 (2) (3) 0.8 2SC5659FHA 2SC5659 0.4 0.4 Features


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    AEC-Q101 300MHz) 2SC5659 2SC4618 2SC4098 2SC2413K 2SC5659FHA 2SC4618FRA 2SC4098FRA PDF