TRANSISTOR S 623 Search Results

TRANSISTOR S 623 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR S 623 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
2SK659 Abstract: TC-6071 Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #	OCR Scan	2SK659 2SK659Ã 2SK659 TC-6071	PDF
BD 130 NPN transistor Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330 Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly	OCR Scan	00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330	PDF
Bd 130 NPN transistor Abstract: 62702-D394 transistor z5 Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly	OCR Scan	623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5	PDF
field-effect transistors Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684 Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .	OCR Scan	2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684	PDF
pepi c Abstract: MRF426 Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.	OCR Scan	MRF426 pepi c MRF426	PDF
AF 239 S Abstract: AF 239 af239 Germanium power S 239 L siemens Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads	OCR Scan	23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
transistor 1548 b Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads	OCR Scan	235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power	PDF
transistor fp 1016 Abstract: BFQ34T ON4497 FP 801 UBB361 Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The	OCR Scan	ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361	PDF
113ZE Abstract: No abstract text available Text: h "7 > V 7 $ /Transistors DTC113ZE/DTC113ZUA/DTC113ZKA k DTC113ZE/DTC113ZUA/DTC113ZKA > - > '* $ Digital Transistors Includes Resistors) ^-/Transistor Switch ÿ , î / 9 n > b ÿ > * s 7 . $ ( S S ìr tiB t' 7 • • ^ Jf^ Ü lS I/'D im e n s io n s (Unît : mm)	OCR Scan	DTC113ZE/DTC113ZUA/DTC113ZKA 100MHz 113ZE	PDF
Untitled Abstract: No abstract text available Text: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code	OCR Scan	Q62702-F1052 OT-89	PDF
MHQ6100 Abstract: IC AL 6001 Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON	OCR Scan	MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001	PDF
2SC 968 NPN Transistor Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from	OCR Scan	2SC5007 2SC 968 NPN Transistor	PDF

WS300 Abstract: No abstract text available Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo * K S P 5 5 : 60V KSPS6:80V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol C haracteristic Collector-Base Voltage	OCR Scan	KSP55/56 625mW KSP55 KSP56 -10mA -100mA WS300	PDF
MPSA10 Abstract: MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14 Text: SAMS UN G SEMICONDUCTOR INC MPSA10 14E 0 \| 7«lb4iq2 00073Mb S \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	000734b MPSA10 T-29-21 625mW 100/iA, lc-10mA, lc-100mA, MPSA25 MPS-a10 MPSA25 625MW transistor k 620 2929 transistor QS 100 NPN Transistor T-29-29 MPSA12 MPSA14	PDF
transistor Bf 444 Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324 Text: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3	OCR Scan	53SbQS GQa4H73 Q62702-F311 6235bQS 000447b transistor Bf 444 transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in	OCR Scan	b3b72SH 2N6166	PDF
Untitled Abstract: No abstract text available Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage	OCR Scan	23b320 BF622 Q62702-F568 Q62702-F1052	PDF
BUW51.52 Abstract: No abstract text available Text: _ ^2=1237 0G2âôb3 S • ~ X H"'3 3 “ i ' i SGS-THOMSON slLiOTOiOÛS S G S-THOMSON B U W 51 3DE D FAST SWITCHING POWER TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN INTERNAL SCHEMATIC DIAGRAM	OCR Scan		PDF
2SC3733 Abstract: 2SC3733-T La HL33 2SA1460 IMWS1 Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier	OCR Scan	2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1	PDF
AF289 Abstract: Q62701-F92 Germanium Transistor Germanium power Text: ESC D • Ô235b05 DÜQ4QÖ3 ^ « S I E G PIMP Germanium UHF Transistor AF289 - SIEMENS AKTIENGESELLSCHAF - -T-JN07 AF 289 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly intended	OCR Scan	023SbOS AF289 T0119. Q62701-F92 voltage11 Q62701-F92 Germanium Transistor Germanium power	PDF
1.4464 Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S	OCR Scan	2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473	PDF
Untitled Abstract: No abstract text available Text: f Z J *> 7 1 S C S - T H O M S O N 5iO gi \|[Li ìl(Q tMD©i M J D 50 n ^ n V0LTAGE f a s t - s w it c h in g NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")	OCR Scan	O-252 TIP50 MJD50 MJD50	PDF

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TRANSISTOR S 623 Search Results

TRANSISTOR S 623 Result Highlights (5)

TRANSISTOR S 623 Datasheets Context Search

GT30F124

2SK659

BD 130 NPN transistor

Bd 130 NPN transistor

field-effect transistors

pepi c

AF 239 S

sx3704

transistor 1548 b

transistor fp 1016

113ZE

Untitled

MHQ6100

2SC 968 NPN Transistor

WS300

MPSA10

transistor Bf 444

Untitled

Untitled

BUW51.52

2SC3733

AF289

1.4464

Untitled