process 65
Abstract: MMBT3640 PN3640 PN4258
Text: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S
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PN3640
MMBT3640
OT-23
PN4258
process 65
MMBT3640
PN3640
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12N60FI
Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STH12N60
STH12N60FI
ISOWATT218
12N60
12V60/'
12N60FI
12N60F
sth12n60fi
transistor 12n60
st 12N60
12N-60F
12n60 dc
GS 069 7.2 24 v
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Untitled
Abstract: No abstract text available
Text: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage
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MPS-A93
MPS-A93
500mA
625mW
20MHz
Boxfc0477,
QQ3369,
fr99g4g3r3-89S
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PDF
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BF314
Abstract: TRANSISTOR bf314
Text: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F
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BF314
O-92F
120ohm
190MHz
100MHz
200MHz
100MHz
TRANSISTOR bf314
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BF397
Abstract: No abstract text available
Text: BF397 SSî! WíSs. PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage
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BF397
BF397
O-92F
625mW
100mA
10jiA
100mA
Boxi9477,
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2SC5343
Abstract: SUT485J kst60 SUT485
Text: SUT485J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT485J Package Code SS SOT-363 Outline Dimensions unit : mm
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SUT485J
2SC5343
OT-363
OT-363
KST-6003-004
SUT485J
kst60
SUT485
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SS TRANSISTOR
Abstract: SRA2204 SUR502EF TRANSISTOR MARKING CODE ss
Text: SUR502EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2204 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR502EF Marking SS Package Code SOT-563F
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SUR502EF
SRA2204
OT-563F
OT-563F
KST-J002-001
-10mA
-10mA,
SS TRANSISTOR
SUR502EF
TRANSISTOR MARKING CODE ss
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circuit diagram induction heating
Abstract: QID3310002 induction heating circuit diagram
Text: m W EREX QID3310002 « • ‘ SS*# SOT«'6 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID 3310002 • • • • VCES . 3300V
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QID3310002
circuit diagram induction heating
QID3310002
induction heating circuit diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417
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BF416
BF418
-25mA)
-250V
-300V
70MHz
O-126-
CB-16
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2SJ313
Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013
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2SJ313
2SK2013
2SJ313
MARKING SG toshiba
transistor marking 4D
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PDF
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Untitled
Abstract: No abstract text available
Text: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.
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DSDM33Ã
QQ03771
T-91-01
NJ903
050433fl
0G03772
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transistor C1000 Toshiba
Abstract: 2SJ313 2SK2013 SV125
Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013
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2SJ313
2SK2013
transistor C1000 Toshiba
2SJ313
2SK2013
SV125
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c 111 transistor
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200
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2SK1529
2SJ200
Ta-25
Tcm25
SC-65
2-16C1B
c 111 transistor
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PDF
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2SK1356
Abstract: No abstract text available
Text: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V
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2SK1356
Ta-25
VDS-900V,
VDS-25V,
OS-25V,
2SK1356
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PDF
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2SC4691
Abstract: No abstract text available
Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment
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2SC4691
2SC4691
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2SK3321
Abstract: 2SK332
Text: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)
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2SK3321
2SK3321
2SK332
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530
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2SJ201
20-5MAX.
--200V
2SK1530
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PDF
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2SC4691
Abstract: No abstract text available
Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment
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2SC4691
2SC4691
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor BSS123LT1 N-Channel 3 DRAIN Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-Source Voltage V d SS 100 Vdc G ate-Source Voltage
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BSS123LT1/D
BSS123LT1
OT-23
O-236AB)
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PDF
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TAA 785 A IC
Abstract: No abstract text available
Text: HARKTECH INTERNATIONAL ~Û7 I > F | S 7 ci citI SS TRANSISTOR COUPLER 5799655 M A R K T E C H INTERNATIONAL 87D 00124 DOOD1SM D T-H-J-ÏZ M TPC6320 INFRARED LED+PHOXO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL ISOLATOR • PROGRAMMABLE CONTROLLERS A -H • SOLID STATE RELAY
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TPC6320
TPC6320
TAA 785 A IC
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PDF
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Untitled
Abstract: No abstract text available
Text: IDM29703 National Semiconductor ID M 2 9 7 0 3 Open-Collector 64-Bit Random A c c e ss M em ories General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic TTL arrays organized as 16 words of four-bits each. They are
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IDM29703
64-Bit
DM54S/DM74S
IDM29703
IDM29703NC
IDM29703JC
IDM29703JM
IDM29703JM/883
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PDF
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A71B
Abstract: b1202 pt100 multiplexer RTD Embedded Technologies sandisk ultra ii SM3000
Text: Data Sheet SS/SM3000 Issue 18 Multipoint Videographic Recorder SM3000 Large clear display – 31 cm 12.1 in. thin film transistor (TFT) color screen Unsurpassed environmental protection – hosedown to IP66 and NEMA4X standards Multiple point recording – up to 36 universal analog inputs
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SS/SM3000
SM3000
10BaseT
A71B
b1202
pt100 multiplexer
RTD Embedded Technologies
sandisk ultra ii
SM3000
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PDF
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toshiba j200
Abstract: No abstract text available
Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529
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2SJ200
toshiba j200
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PDF
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2N6849
Abstract: No abstract text available
Text: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-
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2N6849
MIL-S-19500/564
O-205AF
P-37010--Rev.
06/06M
2N6849
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PDF
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