Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR T08 Search Results

    TRANSISTOR T08 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T08 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PDTA144E

    Abstract: PDTA144
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144EU NPN resistor-equipped transistor Objective specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Objective specification NPN resistor-equipped transistor


    Original     		M3D102 PDTC144EU SC-70; OT323 PDTA144EU. SCA60 115104/1200/02/pp8 PDTA144E PDTA144 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    IC500A

    Abstract: t0800ta45e D-68623 T0800 transistor D 982
    Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		T0800TA45E T0800TA45E IC500A D-68623 T0800 transistor D 982 PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0800EB45G T0800EB45G PDF

    T0800EB

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0800EB45G T0800EB45G T0800EB PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0800TB45E T0800TB45E PDF

    T0800TB45E

    Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
    Text: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0800TB45E T0800TB45E T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C PDF

    T0850VB

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0850VB25E T0850VB25E T0850VB PDF

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0850VB25E T0850VB25E PDF

    T0800EB

    Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
    Text: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		T0800EB45G T0800EB45G T0800EB 2008AN01 T0800 transistor P1 P 12 MAR 208 transistor PDF

    transistor t08

    Abstract: 1S97 t08 transistor marking CODE 68 transistor PDTC144EU tam resistor marking code t08
    Text: Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS


    OCR Scan     		SC-70; OT323 PDTA144EU. PDTC144EU OT323) transistor t08 1S97 t08 transistor marking CODE 68 transistor PDTC144EU tam resistor marking code t08 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    BUX14

    Abstract: BR 4008 transistor BUX14
    Text: Z E SOLID STATE OÏ 387508 f'G E SOLID STATE . . — . ' DlT| 3fl7S0fll 0017bGD L, | ~ 01E 17600 • File Num ber '1203 Silicon N-P-N r* . . . .i • . Switching Transistor D Pro Electron Power Transistors BUX14 TERMINAL DESIGNATIONS For High-Voltage Switching and


    OCR Scan     		BUX14 O-204AA RCA-BUX14 r-33i3 92CS-304S5 IICS-14HI BUX14 BR 4008 transistor BUX14 PDF

    igbt circuit for induction melting

    Abstract: TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers
    Text: An □ IX VS Company As a pioneer of press-pack Insulated Gate Bi-polar Transistor technology W estcode is able to offer a range of class leading devices with voltage ratings of 2.5 kV 1.25 kV DC link , 4.5 kV (2.8 kV DC link) and 1.7 kV currently in development.


    OCR Scan     		D-68623 igbt circuit for induction melting TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers PDF

    A21E

    Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
    Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.


    OCR Scan     		Q62702-F1104 A21E ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 transistor ZO 103 MA PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    Transistor C107m

    Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
    Text: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845


    OCR Scan     		1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 Transistor C107m t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008 PDF

    TAB429H

    Abstract: TD62803 tab429 p605 diode TA76494P ta7259 T*429H toshiba 8429H ta8102 p605 ic
    Text: 2. MOTOR CON TRO L/D RIVE CIRCUIT LINE UP 2-1 Solenoids/A ctuator Driver IC ’s Various pow er operational am plifiers are available as linear actu a to r drivers for driving VCM, etc. T ransistor arrays fo r driving solenoids and relays as reactance loads.


    OCR Scan     		TD62603P/F TD62604P/F TD62382AP/F TD62551S TD62555S 62501P/F TD62507P/F TD62301P/F TD62302P/F TD62306P/F TAB429H TD62803 tab429 p605 diode TA76494P ta7259 T*429H toshiba 8429H ta8102 p605 ic PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSlS M5M51T08AFP,VP,RV-85VSL,-10VSL p H U lS N A R V 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance quadruple-polysilicon CMOS technology. The


    OCR Scan     		M5M51T08AFP RV-85VSL -10VSL 1048576-BIT 131072-WQRD M5M51 T08AFP 131072-word M5M51T08AVP PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P ,V P ,R V -1 2 V S L ,-1 5 V S L _1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM No«-0 ‘ ¿met'* r': DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using


    OCR Scan     		1048576-BIT 131072-WORD M5M51 T08AFP 1048576-bit PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51 T08AFP,VP,RV-85VSL,-1 OVSL p R tì-' 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM SO'" 1 1‘ DESCRIPTION The M 5M 51T08A FP,VP,RV are a 1048576-bit C M O S static RAM PIN CONFIGURATION (TOP VIEW) organized as 131072-w ord by 8 -bit which are fabricated using


    OCR Scan     		M5M51 T08AFP RV-85VSL 1048576-BIT 131072-WORD 51T08A 1048576-bit 131072-w 32-pin PDF

    x -12sl

    Abstract: No abstract text available
    Text: • bSMRf l es DD24S74 D3 1 ■ M IT I MITSUBISHILSls M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5M 51T08AP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are


    OCR Scan     		DD24S74 M5M51 T08AP RV-70SL -85SL -10SL -12SL 1048576-BIT 131072-WQRD 51T08AP x -12sl PDF