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    Vishay Semiconductors TSFF5410

    EMITTER IR 870NM 100MA RADIAL
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    DigiKey TSFF5410 Bulk 4,000
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    Vishay Semiconductors TSFF5410-CSZ

    EMITTER IR
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    Vishay Semiconductors TSFF5410-ASZ

    EMITTER IR
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    Vishay Intertechnologies TSFF5410

    Infrared Emitter 870Nm T-1 3/4; Peak Wavelength:870Nm; Angle Of Half Intensity:22°; Diode Case Style:T-1 3/4 (5Mm); Radiant Intensity (Ie):15Mw/Sr; Rise Time:15Ns; Fall Time Tf:15Ns; Forward Current If(Av):100Ma; Forward Voltage Vf Rohs Compliant: Yes |Vishay TSFF5410
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    TME TSFF5410 1
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    ComSIT USA TSFF5410 194
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    TSFF5410 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSFF5410 Vishay Siliconix Infrared emitting diodes Original PDF

    TSFF5410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 13-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 04-May-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 03-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm


    Original     		PDF TSFF5410 TSFF5410 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 11-Mar-11

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 23-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 2002/95/Es 08-Apr-05

    21142

    Abstract: TSFF5410
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 18-Jul-08 21142

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 2002/9s 08-Apr-05

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 TSFF5410 2002/95/Etrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    photodiode ge

    Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
    Text: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,


    Original     		PDF 26-Aug-08 photodiode ge TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation

    Physics and Technology

    Abstract: physics pn junction diode structure
    Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original     		PDF 06-Oct-14 Physics and Technology physics pn junction diode structure

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original     		PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    diode SR 360

    Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
    Text: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be


    Original     		PDF 11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet

    751-1201-ND

    Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND
    Text: NEW! Fig. Package Peak Wavelength nm Bandwidth (nm) Collector Light Current Ica (mA) Typ. View Angle (°) On/Off Time (µs) Digi-Key Part No. 850 930 850 925 825 825 920 920 850 850 850 850 950 950 950 830 620 ~ 980 900 ~ 980 620 ~ 980 875 ~ 1000 620 ~ 960


    Original     		PDF 751-1003-ND 751-1004-ND 751-1023-ND 751-1041-ND 751-10TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 751-1201-ND BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND