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    TSM1N60LCP Search Results

    TSM1N60LCP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM1N60LCP Taiwan Semiconductor N-Channel Power Enhancement Mode MOSFET Original PDF
    TSM1N60LCP Taiwan Semiconductor 600V N-Channel Power MOSFET Original PDF

    TSM1N60LCP Datasheets Context Search

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    RG 2006 10A 600V

    Abstract: TSM1N60L TSM1N60LCH TSM1N60LCP
    Text: TSM1N60L N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS on , Vgs @ 10V, Ids @ 0.6A = 10Ω General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original
    PDF TSM1N60L TSM1N60L O-251 RG 2006 10A 600V TSM1N60LCH TSM1N60LCP

    TSM1N60LCP

    Abstract: 18BSC TSM1N60L TSM1N60LCH Mosfet MARKING A1 A07 mosfet sot251
    Text: TSM1N60L 600V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY TO-251 Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original
    PDF TSM1N60L O-252 O-251 TSM1N60L TSM1N60LCP 18BSC TSM1N60LCH Mosfet MARKING A1 A07 mosfet sot251

    TH 2190 mosfet

    Abstract: mosfet 600V 6A N-CHANNEL TSM1N60L TSM1N60LCH TSM1N60LCP MOSFET 4600 N-Channel mosfet 600v 1a 4600 mosfet POWER MOSFET 4600 MOSFET TO-252
    Text: TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original
    PDF TSM1N60L O-252 O-251 TSM1N60L TH 2190 mosfet mosfet 600V 6A N-CHANNEL TSM1N60LCH TSM1N60LCP MOSFET 4600 N-Channel mosfet 600v 1a 4600 mosfet POWER MOSFET 4600 MOSFET TO-252