TSM2312CX Search Results

TSM2312CX Price and Stock

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Taiwan Semiconductor TSM2312CX-RFG MOSFET N-CHANNEL 20V 4.9A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM2312CX-RFG	Cut Tape	152,875		1	1 $1 10 $0.626 100 $1 1000 $0.28481 10000 $0.28481	Buy Now
	TSM2312CX-RFG	Digi-Reel	152,875		1	1 $1 10 $0.626 100 $1 1000 $0.28481 10000 $0.28481	Buy Now
	TSM2312CX-RFG	Reel	150,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.2015	Buy Now
Taiwan Semiconductor TSM2312CX RFG Transistor MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: TSM2312CX RFG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSM2312CX RFG	Reel		30 Weeks	45,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	TSM2312CX RFG					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	TSM2312CX RFG				1	1 $0.738 10 $0.486 100 $0.324 1000 $0.291 10000 $0.291	Get Quote
EBV Elektronik	TSM2312CX RFG			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TSC Electronics Ltd TSM2312CX RFG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TSM2312CX RFG		2,397			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TSC Electronics Ltd TSM2312CXRF 20V N-CHANNEL MOSFET Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TSM2312CXRF		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSM2312CX Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM2312CX		Taiwan Semiconductor	20V N-Channel Enhancement Mode MOSFET		Original	PDF
TSM2312CX RFG		Taiwan Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 4.9A SOT23		Original	PDF

TSM2312CX Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM2312 OT-23 TSM2312CX	PDF
TSM2312 Abstract: TSM2312CX Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM2312 OT-23 TSM2312CX TSM2312	PDF
TSM2312CX Abstract: TSM2312 Text: TSM2312 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 5.0A = 33mΩ RDS (on), Vgs @ 2.5V, Ids @ 4.0A = 40mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities	Original	TSM2312 OT-23 TSM2312CX OT-23 300uS, TSM2312CX TSM2312	PDF
DIODE FS 607 Abstract: marking j9 sot-23 sot-23 package marking J9 TSM2312CX TSM2312 1Q1 SOT 6u sot-23 Text: s TAIWAN pb RoHS TSM2312 S E M IC O N D U C T O R 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SOT-23 3 P in D e fin itio n : V ds (V) 1. Gate 2. Source 3. Drain 20 1 2 Features RDS(on)(mÛ) Id (A) 33 @ Vgs= 4 .5V 4.9 4Û @ Vos = 2.5V 4.4 51 @ V g »= 1.8V	OCR Scan	TSM2312 OT-23 TSM2312CX OT-23 DIODE FS 607 marking j9 sot-23 sot-23 package marking J9 TSM2312 1Q1 SOT 6u sot-23	PDF