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    TSOP 48 THERMAL RESISTANCE JUNCTION TO CASE Search Results

    TSOP 48 THERMAL RESISTANCE JUNCTION TO CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 48 THERMAL RESISTANCE JUNCTION TO CASE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QFP160-P-2828-0

    Abstract: QFP304 TSOP 66 pin Package thermal resistance TSOP 48 thermal resistance bga 208 PACKAGE QFJ32-P-R450-1 SDIP64-P-750-1 SOJ28-P-400-1 QFP208-P-2828-0 TSOP 48 thermal resistance junction to case
    Text: This version: Apr. 2001 Previous version:Jun. 1997 PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE This document is Chapter 5 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS5120P, NVGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • NV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		NTGS5120P, NVGS5120P NTGS5120P/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it


    Original     		NUD3048 40E-05 20E-05 00E-05 80E-05 60E-05 PDF

    MOTOROLA OPTOELECTRONIC

    Abstract: MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 305 Power Mosfet MOTOROLA
    Text: APRIL 1997 BR1491/D TSOP–6 SO–8 MICRO–8 OPTOELECTRONIC & SIGNAL PRODUCTS DIVISION Small components. Big solutions. 5005 East McDowell Road S Phoenix, AZ 85008 http://sps.mot.com/ospd TSOP–6 Selector Guide Maximum Ratings RDS on (W) Part Number VDS (V)


    Original     		BR1491/D MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 MGSF3442VT1 MGSF3442XT1 MOTOROLA OPTOELECTRONIC MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1 305 Power Mosfet MOTOROLA PDF

    CY62157DV30

    Abstract: CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case
    Text: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV30 1024K CY62158DV CY62158DV30 CY62157DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case PDF

    CY62158DV30LL-70BVI

    Abstract: CY62158DV30LL-55ZSXI CY62157DV30 CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL
    Text: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV30 1024K CY62158DV CY62158DV30 CY62158DV30LL-70BVI CY62158DV30LL-55ZSXI CY62157DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL PDF

    NUD3048

    Abstract: NUD3048MT1 FET MARKING TSOP6 Marking Code 17
    Text: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it


    Original     		NUD3048 NUD3048 NUD3048/D NUD3048MT1 FET MARKING TSOP6 Marking Code 17 PDF

    27934

    Abstract: No abstract text available
    Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)


    Original     		CY14B101LA CY14B101NA CY14B101LA) CY14B101NA) 32-pin 44-/54-pin 48-pin 27934 PDF

    CY62167DV30LL-70ZXI

    Abstract: 2057-01 Z48A BV48
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original     		CY62167DV30 16-Mbit 48-ball 48-pin I/O15) 48-lead BV48A BV48B 45-ns CY62167DV30LL-70ZXI 2057-01 Z48A BV48 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • This is a Pb−Free Device http://onsemi.com Applications V(BR)DSS • High Side Load Switch • Power Switch for Printers, Communication Equipment


    Original     		NTGS5120P NTGS5120P/D PDF

    NTGS5120PT1G

    Abstract: No abstract text available
    Text: NTGS5120P Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 Features • 60 V BVds, Low RDS on in TSOP−6 Package • 4.5 V Gate Rating • This is a Pb−Free Device http://onsemi.com Applications V(BR)DSS • High Side Load Switch • Power Switch for Printers, Communication Equipment


    Original     		NTGS5120P NTGS5120P/D NTGS5120PT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns PDF

    TSOP 54 Package

    Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns TSOP 54 Package TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package PDF

    TSOP II 54

    Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N TSOP II 54 TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance PDF

    TSOP 54 PIN

    Abstract: TSOP 54 Package CY14B104L CY14B104N
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N TSOP 54 PIN TSOP 54 Package CY14B104L CY14B104N PDF

    TSOP 54 Package used in where

    Abstract: 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP
    Text: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE


    Original     		CY7C1069BV33 16-Mbit CY7C1069BV33 TSOP 54 Package used in where 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP PDF

    TSOP 54 thermal resistance

    Abstract: CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance
    Text: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE


    Original     		CY7C1069BV33 16-Mbit CY7C1069BV33 TSOP 54 thermal resistance CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance PDF

    NUD3048

    Abstract: NUD3048MT1 NUD3048MT1G TSOP6 Marking Code 17
    Text: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it


    Original     		NUD3048 NUD3048 NUD3048MT1 NUD3048MT1G NUD3048/D NUD3048MT1 NUD3048MT1G TSOP6 Marking Code 17 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)


    Original     		CY14B101LA CY14B101NA 32-pin 44-/54-pin 48-pin 48-ball CY14B101LA) CY14B101NA) PDF

    7688 memory chip

    Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		CY62158EV30 1024K CY62157EV30 7688 memory chip CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157 PDF

    CY62157EV

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62158EV30 1024K CY62158DV30 48-ball 44-pin 48-pin CY62157EV30 CY62157EV PDF

    SRAM 54-PIN TSOP

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns SRAM 54-PIN TSOP PDF

    CY62157EV30

    Abstract: CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		CY62158EV30 1024K CY62157EV30 CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI PDF

    NUD3048

    Abstract: NUD3048MT1 NUD3048MT1G
    Text: NUD3048 FET Switch 100 V, 800 mW, N−Channel, TSOP−6 The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it


    Original     		NUD3048 NUD3048 NUD3048/D NUD3048MT1 NUD3048MT1G PDF