TSOP40
Abstract: M29W004 M29W400 QR120
Text: QUALIFICATION REPORT M29W004 T6-U20: 4Mb 512K x 8 SINGLE SUPPLY FLASH MEMORY in TSOP40 INTRODUCTION The M29W004 is a 4Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in TSOP40 package. It can be programmed and erased in-system or in standard
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M29W004
T6-U20:
TSOP40
TSOP40
T6-U20
100ns
M29W400
QR120
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footprint so44
Abstract: No abstract text available
Text: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per
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M28V841
TSOP40
100ns
TSOP40
footprint so44
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TSOP40 Flash
Abstract: M28F102 QR105
Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially
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M28F102
TSOP40
M28F102
120ns
TSOP40 Flash
QR105
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M28F411
Abstract: No abstract text available
Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28F411
M28F421
TSOP40
20/25mA
M28F411
M28F42patent
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1N914
Abstract: M28F411
Text: M28F411 M28F421 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28F411
M28F421
TSOP40
20/25mA
M28F411
M28F42tent
1N914
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PDF
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footprint so44
Abstract: No abstract text available
Text: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY DATA BRIEFING SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per
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M28V841
TSOP40
100ns
TSOP40
M28V841
AI01496
100ns
AI01498
footprint so44
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M28F211
Abstract: M28F221
Text: M28F211 M28F221 2 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28F211
M28F221
TSOP40
M28F211
M28F221
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M28F211
Abstract: M28F221
Text: M28F211 M28F221 2 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28F211
M28F221
TSOP40
M28F211
M28F221
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M28V411
Abstract: M28V421
Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks
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M28V411
M28V421
TSOP40
120ns
M28V41patent
M28V411
M28V421
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PDF
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially
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M28F102
TSOP40
120ns
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JESD22-A112-A
Abstract: HR-10 af55 c100nf M29W040 M39432 QREE9801 AF4F-M29V040
Text: QREE9801 QUALIFICATION REPORT M39432 T6: FLASH+ Multiple Memory in TSOP40 The purpose of this document is to present the summary of the reliability tests performed to qualify the M39432 device. This multiple-memory device combines a Flash memory and an EEPROM on a single die,
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QREE9801
M39432
TSOP40
M39432
JESD22-A112-A
HR-10
af55
c100nf
M29W040
QREE9801
AF4F-M29V040
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Untitled
Abstract: No abstract text available
Text: M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per
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M28V841
TSOP40
100ns
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CDIP32
Abstract: 0795 M28F102 QR121
Text: QUALIFICATION REPORT M28F102 T5-U20: 1 Mb x16 FLASH MEMORY in TSOP40, AGRATE F8 DIFFUSION LINE INTRODUCTION The M28F102 is a 1 Mb Dual Supply (5/12V) Flash memory organised as 64K bytes x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which
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M28F102
T5-U20:
TSOP40,
5/12V)
T5-U20
100ns
MPG/NV/7006.
CDIP32
0795
QR121
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F841 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 5V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per
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M28F841
TSOP40
100ns
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m29f102
Abstract: M29F200 PLCC44 QRFL9806
Text: QRFL9806 QUALIFICATION REPORT M29F102 and M29F105 T6-U20: 1 Mbit x16 Single Supply Flash Memory INTRODUCTION The M29F102 and M29F105 are a 1 Mbit Single Supply (5V) Flash memories organized as 64 KWord of 16 bits each. The M29F102 is offered in PLCC44 and TSOP40 packages; the M29F105 is offered in
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QRFL9806
M29F102
M29F105
T6-U20:
PLCC44
TSOP40
M29F200
QRFL9806
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f421
Abstract: v421 6080ns
Text: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)
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OCR Scan
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M28F411,
M28V411,
TSOP40
r------------1196
f421
v421
6080ns
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-1H0MS0N M28F841 M28V841 m CMOS 8 Megabit 1 Meg x 8,16 x 64K Sector Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver sions MEMORY ERASE in SECTORS, 16 x 64K
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OCR Scan
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M28F841
M28V841
TSOP40
M28V841
85-120ns
200ns
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F411 M28F421 SGS-THOMSON ìl i 4 Megabit x 8, Block Erase FLASH MEMORY PRELIM INARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro tection
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OCR Scan
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M28F411
M28F421
TSOP40
20/25mA
M28F421
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 7 . M28F211 M28F221 SGS-THOMSON •LI 2 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA ■ SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro tection
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OCR Scan
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M28F211
M28F221
TSOP40
M28F221
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PDF
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Untitled
Abstract: No abstract text available
Text: rZ J M28V411 M28V421 S G S -T H O M S O N LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
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OCR Scan
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M28V411
M28V421
TSOP40
120ns
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PDF
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XX20H
Abstract: I01498 A19D A13D
Text: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE
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OCR Scan
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M28V841
TSOP40
100ns
XX20H
I01498
A19D
A13D
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 7 . M28F211 M28F221 SGS-IHOMSON EilD @^ [ÌlLiCT^ K!lD(gi 2 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
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OCR Scan
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M28F211
M28F221
TSOP40
M28F238
M28F211,
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PDF
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Untitled
Abstract: No abstract text available
Text: 57. SGS-THOMSON M28F841 •LI 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 5 V ± 0.5V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE
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OCR Scan
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M28F841
TSOP40
100ns
TSOP40
A0-A19
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PDF
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V8-41
Abstract: No abstract text available
Text: M28F841 M28V341 SGS-1H0MS0N m CMOS 8 Megabit 1 Meg x 8, 16 x 64K Sector Erase FLASH MEMORY ADVANCE DATA SMALL SIZE TSOP40 and S 0 4 4 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver sions M EMORY ERASE in SECTORS, 16 x 64K SUPPLY VOLTAGE in READ OPERATION
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OCR Scan
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M28F841
M28V341
TSOP40
M28V841
85-120ns
200ns
V8-41
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PDF
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