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    M3062

    Abstract: TA2140 csc 2313 m3062lfgpgp u3
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M16C/62P M16C/62P, M16C/62PT) REJ09B0185-0241 M3062 TA2140 csc 2313 m3062lfgpgp u3

    LTS 543 seven segment display

    Abstract: seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration
    Text: TMS320C5x User’s Guide Literature Number: SPRU056D June 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


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    PDF TMS320C5x SPRU056D Index-19 Index-20 LTS 543 seven segment display seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration

    le28f1101t-40

    Abstract: xx20H 65536words16bits
    Text: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption


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    PDF LE28F1101T-40/45/55/70 65536words 16bits) 128word 40ns/45ns/55ns/70ns LE28F1101T 40-pin le28f1101t-40 xx20H 65536words16bits

    bose 6201

    Abstract: Allen Bradley Power Supply schematic diagram allen bradley RCR20 voice control robot tms320 54x mcbsp tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 TMS320 application manual spru288 JTAG MINI LT 542 seven segment display data sheet
    Text: TMS320C54x DSP Reference Set Volume 1: CPU and Peripherals Literature Number: SPRU131F April 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest


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    PDF TMS320C54x SPRU131F Index-22 XDS510 Index-23 bose 6201 Allen Bradley Power Supply schematic diagram allen bradley RCR20 voice control robot tms320 54x mcbsp tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 TMS320 application manual spru288 JTAG MINI LT 542 seven segment display data sheet

    DT28F016SA

    Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
    Text: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate


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    PDF 28F016SA 16-MBIT 56-Lead, 28F008SA 16-MbF016SA, 28F016SV, 28F016XS, 28F016XD DT28F016SA DD28F032SA 28F008SA 28F016SV 28F032SA 28F008SA-Compatible

    an1171

    Abstract: sharc ADSP-21xxx ADDRESSING MODES CHN 950 ADSP-21062 ADSP21535 ADSP-21535 ADSP-2188M ADSP-2191 ADSP-TS101S DSM2150F5V
    Text: DSM2150F5V DSM Digital Signal Processor System Memory For Analog Devices DSPs (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP – Create state machines, chip selects, simple shifters and counters, clock dividers, delays – Easily add memory, logic, and I/O to the External Port of ADSP-218x, 219x, 2106x,


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    PDF DSM2150F5V ADSP-218x, 2106x, 2116x, 2153x, TS101 16-bit an1171 sharc ADSP-21xxx ADDRESSING MODES CHN 950 ADSP-21062 ADSP21535 ADSP-21535 ADSP-2188M ADSP-2191 ADSP-TS101S DSM2150F5V

    Untitled

    Abstract: No abstract text available
    Text: CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)


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    PDF CAT28F102 40-pin 44-pin 28F102 500/Reel 125oC CAT28F102NI-90T 5038-0A

    C203

    Abstract: C209 SPRU011 SPRU052 SPRU099 SPRU103 SPRU131 TMS320 FED-STD-101 erskine dc motor drives
    Text: TMS320C54x Serial Ports Addendum to the TMS320C54x User's Guide User’s Guide 1995 Digital Signal Processing Products Printed in U.S.A., December 1995 D425005–9741 revision * SPRU156 TMS320C54x Serial Ports User’s Guide Addendum to the TMS320C54x User’s Guide


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    PDF TMS320C54x D425005 SPRU156 TMS320C54x C203 C209 SPRU011 SPRU052 SPRU099 SPRU103 SPRU131 TMS320 FED-STD-101 erskine dc motor drives

    MX28F2100B

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


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    PDF MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100B

    PC14

    Abstract: 2ah 2037 philips ak 141-15
    Text: REJ09B0126-0101Z M16C/6N Group 16 M16C/6NL, M16C/6NN Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01


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    PDF REJ09B0126-0101Z M16C/6N M16C/6NL, M16C/6NN) 16-BIT M16C/60 PC14 2ah 2037 philips ak 141-15

    28F640J5

    Abstract: iMC016FLSG 29062
    Text: E PRODUCT PREVIEW VALUE SERIES 200 FLASH MEMORY CARD 8 – 64 MEGABYTES iMC008FLSG, iMC016FLSG, iMC024FLSG iMC032FLSG, iMC048FLSG, iMC064FLSG n n n n n n n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Technology High-Performance Writes  12 µs Typical Byte Write


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    PDF iMC008FLSG, iMC016FLSG, iMC024FLSG iMC032FLSG, iMC048FLSG, iMC064FLSG 128Flash AP-374 AP-644 AP-646 28F640J5 iMC016FLSG 29062

    2481D

    Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
    Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz


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    PDF 64-megabit 2481D AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910

    28F320J5

    Abstract: 28F640J5 intel DOC N15H
    Text: E PRODUCT PREVIEW SERIES 200 FLASH MEMORY MINIATURE CARD 4, 8, 16 MBYTES iFM004G, iFM008G and iFM016G n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Flash Technology n n n n n Fast Read Performance  150 ns Max Access Time High-Performance Writes


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    PDF iFM004G, iFM008G iFM016G AP-374 AP-644 AP-646 AP-647 28F320J5 28F640J5 intel DOC N15H

    TRANSISTOR BJ 131

    Abstract: PC14 p088
    Text: REJ09B0124-0101Z M16C/6N Group 16 M16C/6NK, M16C/6NM Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01


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    PDF REJ09B0124-0101Z M16C/6N M16C/6NK, M16C/6NM) 16-BIT M16C/60 TRANSISTOR BJ 131 PC14 p088

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


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    PDF M28F102 0020h 0050h M28F102 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel


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    PDF 28F016SA 28F008SA 56-Lead, 28F016SA 28F032SA

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc


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    PDF 28F016XS 16-MBIT 28F008SA 56-Lead 128-Kbyte 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp


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    PDF 28F016XS 16-MBIT 28F008SA 128-Kbyte 56-Lead

    Untitled

    Abstract: No abstract text available
    Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C


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    PDF VS28F016XS, MS28F016XS 16-MBIT VS28F016XS MS28F016XS VE28F008, M28F008 28F016SA 56-Lead 128-Kbyte

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms


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    PDF MC008FLSG, MC016FLSG, MC024FLSG MC032FLSG, MC048FLSG, MC064FLSG AP-374 AP-644 AP-646 AP-647

    Untitled

    Abstract: No abstract text available
    Text: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)


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    PDF CAT28F102 -40-pin -44-pin 28F102A 125oC CAT28F102NI-90TE7

    INTEL ES

    Abstract: XX96H 297372
    Text: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down


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    PDF 28F016XS 16-MBIT 56-Lead 28F008SA 128-Kbyte 16-Mbit /0895/3K INTEL ES XX96H 297372

    xx40h

    Abstract: nb2b
    Text: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)


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    PDF CAT28F202 -40-pin -44-pin CAT28F202 28F202-15 28F202-20 I-12T xx40h nb2b

    26C1024

    Abstract: No abstract text available
    Text: M S IC M X26 C 10 24A 1 M-BIT 6 4 K x 1 6 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% p rog ram/e rase voltage Fast access time: 70/90/100/120 ns


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    PDF 16-bit 10OjaA 44-pin 40-pin l-847-963-1909 26C1024