le28f1101t-40
Abstract: xx20H 65536words16bits
Text: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption
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LE28F1101T-40/45/55/70
65536words
16bits)
128word
40ns/45ns/55ns/70ns
LE28F1101T
40-pin
le28f1101t-40
xx20H
65536words16bits
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CXK5T16100TM
Abstract: No abstract text available
Text: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.
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CXK5T16100TM
-12LLX
65536-word
16-bit
65536words
16-bits.
120ns
100ns
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5sdpsoftware
Abstract: No abstract text available
Text: Preliminary Specifications CMOS LSI LE28FV1101T-70/90/15 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time LE28FV1101T-70 : 70ns(Max.)
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LE28FV1101T-70/90/15
65536words
16bits)
128word
LE28FV1101T-70
LE28FV1101T-90
LE28FV1101T-15
150ns
LE28FV1101T-70/90
5sdpsoftware
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P0820A
Abstract: 32PIN CXK5V8512TM
Text: CXK5V8512TM -85LLX/10LLX 65536-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized
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CXK5V8512TM
-85LLX/10LLX
65536-word
65536-words
-85LLX
-10LLX
100ns
CXK5V8512TM
P0820A
32PIN
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CXK5T8512TM
Abstract: CXK5T8512TN
Text: CXK5T8512TM/TN -10LLX/12LLX 65536-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits.
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CXK5T8512TM/TN
-10LLX/12LLX
65536-word
65536-words
CXK5T8512TM/TN-10LLX
100ns
CXK5T8512TM/TN-12LLX
120ns
CXK5T8512TM
CXK5T8512TN
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icc3
Abstract: CXK5V16100TM
Text: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this
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CXK5V16100TM
-85LLX/10LLX
65536-word
16-bit
65536-words
16-bits.
-85LLX
-10LLX
100ns
icc3
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HM6709AJP-15
Abstract: HM6709AJP-20
Text: HM6709A Series 65536-word x 4-bit High Speed Static Random Access Memory Features 65536-words × 4 bit organization Fully TTL compatible input and output 1.0 µm Hi-BiCMOS process +5 V single supply Completely static memory No clock or timing strobe required
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HM6709A
65536-word
65536-words
HM6709AJP-15
300-mil
28-pin
HM6709AJP-20
CP-28DN)
HM6709AJP-15
HM6709AJP-20
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CXK5T16100TM
Abstract: No abstract text available
Text: SONY I CXK5T161OOTM -1 0 L L X /1 2 L L X 65536-word x 16-bit High Speed CMOS Static RAM Preliminary Description The CXK5T16100TM is a general purpose high speed C M O S static RAM organized as 65536words by 16-bits. Special feature are low power consumption and
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65536-word
16-bit
CXK5T16100TM
65536-words
16-bits.
CXK5T161OOTM
-10LLX/12LLX
-10LLX
-12LLX
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5 pin A13E
Abstract: a13e ic
Text: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and
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CXK5T161OOTM
65536-word
16-bit
CXK5T16100TM
65536words
16-bits.
-10LLX
-12LLX
-12LLX
5 pin A13E
a13e ic
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Untitled
Abstract: No abstract text available
Text: ,UJNV CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Prelim inary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and high speed.
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CXK5T16100TM
-12LLX
65536-word
16-bit
65536words
16-bits.
120ns
100ns
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101490
Abstract: No abstract text available
Text: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM101490
65536-Words
10/12ns
570mW
101490
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Untitled
Abstract: No abstract text available
Text: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required
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HM6709A
65536-Word
65536-words
450mW
7/10/10ns
HM6709AP-15
6709AP-20
6709AP-25
DP-28N)
JP-15
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isa0
Abstract: OA10
Text: HM10504-10/12 •Preliminary 65536-W ords x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10504 is ECL 10K com patible, 65536-words by 4-bits read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM10504-10/12
5536-W
HM10504
65536-words
10/12ns
620mW
HM10504-10
DG-24V)
isa0
OA10
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Untitled
Abstract: No abstract text available
Text: M ITSU BISHI LSls M 5 M 5 V 2 1 3 2 G P - 5 H ,- 5 ,-6 ,-7 ,- 8 oe^ o P ,+*&• a <vOÖ!«cl 2097152-BIT 65536-WORD BY 32-BIT SYNCHRONOUS BURST SRAM DESCRIPTION The M5M5V2132 is a family of 2M bit synchronous SRAMs organized as 65536-words of 32-bit. The M5M5V2132 provides a
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2097152-BIT
65536-WORD
32-BIT)
M5M5V2132
65536-words
32-bit.
M5M5V2132GP-5H
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: HM10504“10/12 65536-Words x — Preliminary 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10504 is ECL 10K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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65536-Words
HM10504
65536-words
10/12ns
620mW
HM10504-10
HM10504-12
DG-24V)
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Untitled
Abstract: No abstract text available
Text: HM10490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10490 is ECL 10K compatible, 65536-words by 1-bit read/ write random access memory developed for high speed systems such as scratch pads and control/buffer storage.
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HM10490
65536-Words
10/12ns
570mW
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Untitled
Abstract: No abstract text available
Text: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM100490
65536-Words
10/12ns
500mW
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Untitled
Abstract: No abstract text available
Text: H M 1 0 4 9 0 -1 5 Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory H M 10490-15 is E C L 10k com patible, 65536-w ords x 1-bit, read/write random access m em ory developed fo r high speed sys tems such as m ain mem ories fo r super computers.
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65536-words
65536-w
536-w
HM100490-15
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Untitled
Abstract: No abstract text available
Text: HM6708 Series 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM The H M 6 70 8 Series has been converted to the H M 6 70 8A Series. The new A Series is com pletely compatible with the non-A Series. Please refer to the specification comparison below to assist in your conversion.
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HM6708
65536-word
HM6708A
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101490
Abstract: No abstract text available
Text: HM101490 Series — Pre lim in ary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is EC L 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM101490
65536-Words
HM101490-12
DG-22N)
10/12ns
570mW
t1819
101490
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Hb203
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM S1E D 44^203 GGlfiOOV 0 7 5 • HM6709A S e rie s - • Preliminary W6 65536-Word x 4-Blt High Speed Static RAM - 2 3 ■ FEATURES • 65536-words x 4 bit organization • Fully TTL compatible input and output • 1.0/tm Hi-BiCMOS process
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HM6709A
65536-Word
65536-words
450mW
7/10/10ns
HM6709AP-15
HM6709AP-20
HM6709AP-25
DP-28N)
HM6709AJP-15
Hb203
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Untitled
Abstract: No abstract text available
Text: HM101504F-10/12 — Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory • PIN ARRANGEMENT ■ DESCRIPTION 32 □ CS The HM101504 is ECL 100K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM101504F-10/12
65536-Words
HM101504
HM101500F-15
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Untitled
Abstract: No abstract text available
Text: HM10504-10/12 •Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory ■ DESCRIPTION The HM10504 is ECL 10K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
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HM10504-10/12
65536-Words
HM10504
10/12ns
620mW
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