Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: VL475S6553B-GAS 1.4 General Information 512MB 64Mx72 SDRAM PC133 ECC REGISTERED 144 PIN SODIMM Description: The VL475S6553B is a 64Mx 72 Synchronous Dynamic RAM high density memory module. This memory module consists of eighteen CMOS 32Mx8 bits with4banks Synchronous DRAMs in TSOP-II400 mil
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VL475S6553B-GAS
512MB
64Mx72
PC133
VL475S6553B
32Mx8
TSOP-II400
144-pin
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i 3005-2
Abstract: SI 1050 GH
Text: Product Specifications PART NO: VL466S1724-GAS/GHS/GLS REV: 1.6 General Information 128MB 16Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED 144-PIN SODIMM Description: The VL466S1724 is a 16M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 8 CMOS 8Mx16 bits with 4banks Synchronous DRAMs in TSOP-II400mil packages and a
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VL466S1724-GAS/GHS/GLS
128MB
16Mx64
PC100/PC133
144-PIN
VL466S1724
8Mx16
TSOP-II400mil
A0-A11
i 3005-2
SI 1050 GH
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL366S6553B-IAS/IHS/ILS REV: 1.0 General Information 512MB 64Mx64 SDRAM PC100/PC133 UNBUFFERED 168 PIN DIMM Description: The VL366S6553B is a 64M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of sixteen CMOS 32Mx8 bits with 4banksSynchronous DRAMs in TSOP-II400mil packages
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Original
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VL366S6553B-IAS/IHS/ILS
512MB
64Mx64
PC100/PC133
VL366S6553B
32Mx8
TSOP-II400mil
168-pin
DQ0-DQ63
Ena75)
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: VL475S6553B-GAS 1.4 General Information 512MB 64Mx72 SDRAM PC133 ECC REGISTERED 144 PIN SODIMM Description: The VL475S6553B is a 64Mx 72 Synchronous Dynamic RAM high density memory module. This memory module consists of eighteen CMOS 32Mx8 bits with4banks Synchronous DRAMs in TSOP-II400 mil
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Original
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PDF
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VL475S6553B-GAS
512MB
64Mx72
PC133
VL475S6553B
32Mx8
TSOP-II400
144-pin
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i 3005-2
Abstract: SO-DIMM 144-pin gls 126 VM466S924
Text: Product Specifications PART NO: VL466S924-GAS/GHS/GLS REV: 1.4 General Information 64MB 8Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VM466S924 is a 8M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 4 CMOS 8Mx16 bits with 4banks Synchronous DRAMsin TSOP-II400mil packages and a
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VL466S924-GAS/GHS/GLS
8Mx64
PC100/PC133
144-PIN
VM466S924
8Mx16
TSOP-II400mil
144-pin
DQ0-DQ63
KE024
i 3005-2
SO-DIMM 144-pin
gls 126
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850C
Abstract: i 3005-2
Text: Product Specifications PART NO: VL366S6553B-IAS/IHS/ILS REV: 1.0 General Information 512MB 64Mx64 SDRAM PC100/PC133 UNBUFFERED 168 PIN DIMM Description: The VL366S6553B is a 64M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of sixteen CMOS 32Mx8 bits with 4banksSynchronous DRAMs in TSOP-II400mil packages
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Original
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PDF
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VL366S6553B-IAS/IHS/ILS
512MB
64Mx64
PC100/PC133
VL366S6553B
32Mx8
TSOP-II400mil
168-pin
A0-A12
DQ0-DQ63
850C
i 3005-2
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL466S1724-GAS/GHS/GLS REV: 1.6 General Information 128MB 16Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED 144-PIN SODIMM Description: The VL466S1724 is a 16M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 8 CMOS 8Mx16 bits with 4banks Synchronous DRAMs in TSOP-II400mil packages and a
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Original
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PDF
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VL466S1724-GAS/GHS/GLS
128MB
16Mx64
PC100/PC133
144-PIN
VL466S1724
8Mx16
TSOP-II400mil
A0-A11
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL466S924-GAS/GHS/GLS REV: 1.4 General Information 64MB 8Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VM466S924 is a 8M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 4 CMOS 8Mx16 bits with 4banks Synchronous DRAMsin TSOP-II400mil packages and a
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Original
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PDF
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VL466S924-GAS/GHS/GLS
8Mx64
PC100/PC133
144-PIN
VM466S924
8Mx16
TSOP-II400mil
144-pin
DQ0-DQ63
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Untitled
Abstract: No abstract text available
Text: H ig h P e r fo r m a n c e 2 M X 8 /1 M X 1 6 CMOS DRAM A S4L C 2M 8S0 A S4L C 1M 16S0 16 M egabit C M O S synchronous DR A M Advance information Features 1 Automatic and direct precharge • Organization: 1,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks 2M x8
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OCR Scan
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50-pin
44-pin
AS4LC2M8S0-10TC
AS4LC2M8S0-12TC
AS4LC1M16S0-10TC
AS4LCIM16S0-12TC
0001b27
AS4LC1M16S0
TSOPII400
II-30000-A.
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UAA 1006
Abstract: AS4LC1M16SO AS4LC1M16S0 1024x512x8 DTA 1006
Text: Advance informatio AS4LC 2M8S0 AS4LC1 M16S0 3.3V 2 M x 8 /lM x 1 6 CMOS synchronous DRAM Features A utom atic and direct precharge B urst read, single w rite Can assert ra n d o m co lu m n address in every cycle LVTTL co m patible V O 3 .3 Y p o w e r supply
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OCR Scan
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PDF
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M16S0
t90pii
44-pin
AS4LC2M890-
AS4LC2M8S0-12TC
50-pin
AS4LC1M16S0-8TC
AS4LC1M16SQ-10TC
AS4IC1M16S0-12TC
6ID11-3O0Q0-Ã
UAA 1006
AS4LC1M16SO
AS4LC1M16S0
1024x512x8
DTA 1006
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