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    TT 42F Search Results

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    TT 42F Price and Stock

    KOA Speer Electronics Inc RK73H1JTTDD1742F

    Thick Film Resistors - SMD 17.4K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H1JTTDD1742F 36,137
    • 1 $0.1
    • 10 $0.024
    • 100 $0.01
    • 1000 $0.005
    • 10000 $0.003
    		Buy Now

    KOA Speer Electronics Inc RK73H1JTTDD4R42F

    Thick Film Resistors - SMD 1/10W 4.42 OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H1JTTDD4R42F 19,185
    • 1 $0.1
    • 10 $0.028
    • 100 $0.012
    • 1000 $0.005
    • 10000 $0.003
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    KOA Speer Electronics Inc RK73H1JTTDD2942F

    Thick Film Resistors - SMD 29.4K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H1JTTDD2942F 18,609
    • 1 $0.1
    • 10 $0.024
    • 100 $0.01
    • 1000 $0.005
    • 10000 $0.002
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    KOA Speer Electronics Inc RK73H1ERTTP6042F

    Thick Film Resistors - SMD 60.4K ohm 1% 0.1W AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RK73H1ERTTP6042F 10,399
    • 1 $0.15
    • 10 $0.073
    • 100 $0.041
    • 1000 $0.022
    • 10000 $0.019
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    KOA Speer Electronics Inc SG73P2ATTD3242F

    Thick Film Resistors - SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG73P2ATTD3242F 10,000
    • 1 $0.17
    • 10 $0.139
    • 100 $0.055
    • 1000 $0.023
    • 10000 $0.017
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    Find more TT 42F price and stock on Findchips.com

    TT 42F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 00 PM TelecomBus Serializer Data Sheet Released da y, 10 Au g us t, 20 04 09 :1 7: PM5310 es , In c. on Tu es TBSTM DATA SHEET Proprietary and Confidential Released Issue 7 : November, 2001 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo gi TelecomBus Serializer


    Original     		PMC-1991257, PM5310 SPECTRA-248 PDF

    PPE PA GF30

    Abstract: PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin
    Text: Global Connection Systems Catalog Table of Contents World Headquarters and Customer Center Mail Code 483.400.306 5725 Delphi Drive Troy, Michigan 48098-2815 U.S.A. Tel: [1] 248.813.2334 Fax: [1] 248.813.2333 Asia Pacific Regional Headquarters No. 60, Yuan Guo Road


    Original     		DP-06-E-165 1006/GrxROB/10m PPE PA GF30 PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin PDF

    50 Watt MOSFET amplifier

    Abstract: 300 watt mosfet amplifier dca300 motor drive mosfet H bridge 300 Watt Amplifier IC 600 Watt Mosfet Power Amplifier
    Text: MOD U LA R D E V I C E S INC 4SE D bE?42flS 0 0 0 0 2 A 1 T IMDI fiOO /300Watt SERVO AM PLIFIERS fo r DC MOTOR DRIVE Description DCA600/300 T The DCA600 and DCA300 are versatile and compact 600 watt and 300 watt rated servo amplifiers for DC motor drive and other linear amplifier applications. These linear


    OCR Scan     		42flS DCA600/300 DCA600 DCA300 DCA300: DCA600: DCA300) 100VDC 50 Watt MOSFET amplifier 300 watt mosfet amplifier motor drive mosfet H bridge 300 Watt Amplifier IC 600 Watt Mosfet Power Amplifier PDF

    dbl 2052

    Abstract: ba 5839 fp sj 2252 ba 5839 fb KSD 302 SCR 131- 6 WJ 66 SCR 131- 6 WJ 60 BR 5254 SCR 131- 6 WJ 69 KL SN 102 lcd
    Text: HD66732 Graphics Liquid Crystal Display Controller/Driver Supporting JIS L evel-1 and Level-2 Kanji ROM HITACHI Rev 1.0 Jun. 1st, 1998 Description T he H D 66732 is a dot-m atrix liquid crystal display (LC D ) controller and driv er LSI that displays 1 l-b y -1 2


    OCR Scan     		HD66732 HD66732 l-by-12 10-character 80-system dbl 2052 ba 5839 fp sj 2252 ba 5839 fb KSD 302 SCR 131- 6 WJ 66 SCR 131- 6 WJ 60 BR 5254 SCR 131- 6 WJ 69 KL SN 102 lcd PDF

    AN6356N

    Abstract: MN6163 MN6168 AJE TI motor jun tuo AN63 AN6357 AN6357N ANS359N AN6356
    Text: VTRffl MN6168 T * m - o r\-'W MN6168 VTR ¥ 4 •» L S I/ D ig ita l Servo L S I for Video Tape Recorders R l Ä - ^ K H E l / P i n Assignm ent i|* W te V T It/ l* ^ ÌH « fìg V T R i X r K V X ‘ 6 b T J MN6IC8 l i . •>' 9 L S I >>i T + . • r 'r * ? > & < n r i


    OCR Scan     		MN6168 AN6356N) AN6357, AN6357N. AN63S9N) MN6163 MN6168, AN6344N. AN6356N MN6168 AJE TI motor jun tuo AN63 AN6357 AN6357N ANS359N AN6356 PDF

    MCF5202

    Abstract: No abstract text available
    Text: SECTION 9 ELECTRICAL CHARACTERISTICS 9.1 MAXIMUM RATINGS Table 9-1. Maximum Ratings RATING SYMBOL VALUE UNIT Supply voltage Vcc •0.3 to +7.0 V Input voltage Vi„ -0.5 to Vcc + 0.5V V Storage temperature range Tstg -55 to 150 °c The ratings in Table 9-1 define maximum conditions under which the device will


    OCR Scan     		MCF5202 PDF

    TT 42F

    Abstract: No abstract text available
    Text: SEMIKRON Vrsm Vrrm I fr m s maximum value for continuous operation 120 A (sin. 180; Ifa v V = 85 °C; 50 Hz) 42 A Tease SEMIPACK 1 Fast Dtode Modules SKKD 42 F SKMD 42 F SKND 42 F 1000 SKKD 42 F 10 SKMD 42 F 10 - 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12


    OCR Scan     		SKND42F SKKD42F KMD42P TT 42F PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE M H 2 M 3 2 B Y J -5 ,-6 ,-7 / MH2M32BNYJ-5,-6,-7 FAST PAGE MODE 67108864-BIT (2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Both side] The MH2M32BYJ/BNYJ is 2097152-word x 32-bit dynamic RAM and consists of 16 industry standard 1M x 4 dynamic


    OCR Scan     		MH2M32BNYJ-5 67108864-BIT 2097152-WORD 32-BIT) MH2M32BYJ/BNYJ 32-bit 32BYJ/BNYJ-5 32BYJ/BNYJ-6 32BYJ/BNYJ-7 PDF

    BUK451-100A

    Abstract: K451 BUK451-100B T0220AB transistor 513
    Text: -7^ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK451-100A/B 7110fl2b BUK451 -100A -100B T0220AB T-39-11 711082t BUK451-100A K451 BUK451-100B transistor 513 PDF

    MP 130I 00

    Abstract: MP 130I MP -130I cmkm ECP11 BKD JE GLDG LC74795 LC74795M djrp
    Text: Orònrirfl «MJfTTbCf : EM%555? CMOS LSI LC74795, 74795M SAgifOI On-Screen Display Controller LSI Preliminary Overview Package Dimensions The LC74795 und LCM795M are. CMOS LSIs las on­ screen diiplny, a function that displays characters and pattern* ori a TV acreen under microprocessor control,


    OCR Scan     		LC74795, 74795M LC74795 LC74795M diCtiiC-11k MP 130I 00 MP 130I MP -130I cmkm ECP11 BKD JE GLDG djrp PDF

    HL8314E

    Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		HL8314E/G 0G12a71 HL8314E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8314E XP 215 hitachi HE130 hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001 PDF

    HL7836MG

    Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
    Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light


    OCR Scan     		HL7836G/MG HL7836G/MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7836MG HE8807SG HL7836G HL8312E Hitachi Scans-001 PDF

    PM20CHA060

    Abstract: 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06
    Text: P OIilEREX ¿ ^ I k J M INC E V S IE T> m 72 i4 b 2 1 DDDSb5f l ObO * P R X P M 20C H A 060 lE A -7= 5 7 - 2 5 Powerex, inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln t G llim O C P '^ - 3 M 0 d u l 0 S Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e p ^ a s e


    OCR Scan     		PM20CHA060 BP107, Amperes/110-230 PM20CHA060 72T4b21 2 anode igbt inverter circuit diagram 3 phase inverters circuit diagram igbt 3 phase inverters circuit diagram igbt PM20CHA060 BP107 T-57-aa PM20CHA06 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY i i i S lllllììl S ^ 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB8118165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118165B is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory


    OCR Scan     		MB8118165B-50/-60 MB8118165B 16-bit MB8118165B C42001S-2C-1 374175b 0D242fl2 PDF

    BDT61F

    Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F
    Text: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.


    OCR Scan     		BDT61F; BDT61BF; OT186 BDT60F, BDT60AF, BDT60BF BDT60CF. BDT61F GD34b 61AF BDT61BF BDT60AF BDT60CF BDT60F PDF

    HL8312E

    Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
    Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope


    OCR Scan     		HL7841MG G012047 HL7841MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8312E 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE7601 PDF

    Untitled

    Abstract: No abstract text available
    Text: G M 71V 65803C G M 71V S65803CL LG Semicon Co.,Ltd. 8,388,608 W ORDS X 8 BIT CM OS DYNAMIC RAM Description Pin C o n fig u ratio n The GM71 V S 65803C/CL is the new generation dynam ic RAM organized 8,388,608 words by Sbits. The G M 7I V(S)65803C/CL utilizes advanced CMOS


    OCR Scan     		65803C S65803CL 65803C/CL 65803O GM71V65803C GM71VS 5803CL PDF

    HE8811

    Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit­ able as a light source for laser beam printers, laser levelers and various other types of optical equipment.


    OCR Scan     		HL7842MG HL7842MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8811 HE8403 HE8807SG HE8812SG HE8813VG HL8312E he8813 Hitachi Scans-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 2 4 ^ 6 2 3 D D 2 3 f l7 t . MG2 MITSUBISHI LSIs • I1 IT 1 M5M4V4170J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family o f 262144-w ord by 1 6 -bit dynamic RAMs,


    OCR Scan     		4V4170J 4194304-BIT 262144-WORD 16-BIT 262144-w PDF

    HL1221A

    Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.


    OCR Scan     		HL1221 HL1221A/AC HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL1221A HL1221AC HL8312E Hitachi Scans-001 HE8403 PDF

    HL7802E

    Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
    Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.


    OCR Scan     		HL7802E/G HL7802E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7802E HE8807SG HE8813VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040 PDF

    HE8813VG

    Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
    Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


    OCR Scan     		HL8312E/G HL8312E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8813VG HE8403 HE8807SG HE8811 HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807 PDF

    hitachi he1301

    Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser


    OCR Scan     		HL7838G D0120L42 HL7838G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, hitachi he1301 HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HL7838 Hitachi Scans-001 HE8403 PDF

    T9040

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


    OCR Scan     		HL8318E/G 441bEG5 HL8318E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, T9040 HE8807SG HE8813VG HL8312E HL8318E HL8318G Hitachi Scans-001 PDF