tunnel diode
Abstract: coaxial limiter
Text: jtà i M a n A M P c< o m p a n y Limiter Tunnel Diode Detectors 0.1 -18.0 GHz ML 7718-0000 Series V2.00 Description Typical Performance This series of limiter-detectors offers similar performance advantages to the standard tunnel diode detectors but with extended RF input pow er range. A silicon PIN
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30dBm
tunnel diode
coaxial limiter
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TUNNEL DIODE
Abstract: No abstract text available
Text: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring
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PE70A6000
PE70A6000
sma-female-0-watts-attenuator-pe70a6000-p
TUNNEL DIODE
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TUNNEL DIODE
Abstract: No abstract text available
Text: 30 dB With 10 Bit Programmable TTL Controlled Attenuator, 2.4mm Female To 2.4mm Female, 0.03 dB Steps From 18 GHz To 40 GHz TECHNICAL DATA SHEET PE70A6001 The PE70A6001 is 10 Bit Programmable 30 dB Pin Diode Attenuator with Step Resolution as Low as 0.03 dB over the
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PE70A6001
PE70A6001
com/30db-programmable-2
4mm-female-0-watts-attenuator-pe70a6001-p
TUNNEL DIODE
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tunnel diode
Abstract: No abstract text available
Text: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive
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30dBm
17dBm
-20dBm
tunnel diode
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back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
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MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
MBD5057
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tunnel diode
Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Text: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise
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fdlL-s-19500/269
SEMfC0NDUCT05f
1N3719,
1N3715,
1N3717,
1N3719
1N3721
1NS71
KSL-S-1950CV269
MIL-s-19500/269
tunnel diode
lm719
IN3717
tunnel diode application
1N3717
1N2719
TUNNEL DIODE d 220
1N3713
1N3715
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tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
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sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
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tunnel diode high frequency
Abstract: MTD0208 MTD0208-M23 tunnel detector tunnel MTD-0218 MTD0218-M23
Text: BROADBAND TUNNEL DIODE DETECTORS metelics m CORPORATION The MTD Series of Broadband Tunnel Detectors offers high sensitivity and low VSWR. These detectors are available in several standard packages. Special packages and opposite polarities are available upon request. These are designed and m anufac
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MTD-1002
MTD-0208
MTD-0818
MTD-0218
MTD0208-M23
MTD0818-M23
-20dBm,
MTD1002-M23
-20dBm
tunnel diode high frequency
MTD0208
tunnel detector
tunnel
MTD0218-M23
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tunnel diode high frequency
Abstract: 0818C L0218C GE "TUNNEL DIODE"
Text: MICAS00016 0* Mica Microwave’s standard detector product line includes a broad range of proven designs that ex tend from 5 0 0 MHz to 26.5 GHz. These detectors are offered with three different device types; tunnel, biased Schottky, and zero bias Schottky. All models
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MICAS00016
MIL-STD-883.
tunnel diode high frequency
0818C
L0218C
GE "TUNNEL DIODE"
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tunnel diode high frequency
Abstract: 320 5400 capacitor DATASHEET TUNNEL DIODE tunnel diode ACTM-1137 GND-Pin10 ACTM-1130NM47
Text: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to
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10MHz
ACTM1130NM4720
ACTM1130
TMSM-0205
tunnel diode high frequency
320 5400 capacitor
DATASHEET TUNNEL DIODE
tunnel diode
ACTM-1137
GND-Pin10
ACTM-1130NM47
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tunnel detector
Abstract: ACTM-1130 tunnel diode high frequency tunnel diode 6 pin Tunnel Diode ACTM1130
Text: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to
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10MHz
ACTM1130NM4720
ACTM1130
TMSM-0205
tunnel detector
ACTM-1130
tunnel diode high frequency
tunnel diode 6 pin
Tunnel Diode
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Untitled
Abstract: No abstract text available
Text: Advanced Control Components SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to
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10MHz
ACTM1130NM4720
ACTM1130
TMSM-0303B
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ACTM-1137
Abstract: No abstract text available
Text: SURFACE MOUNT TUNNEL DETECTORS Advanced Control Components offers a series of tunnel detectors built in surface mount modules. These modules include complete detector circuits with DC returns and RF bypass capacitors. Options include input pads or limiters to
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10MHz
ACTM1130NM4720
ACTM1130
TMSM-0210A
ACTM-1137
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H48SA
Abstract: No abstract text available
Text: FEATURES High efficiency: 94.2% @ 54V/ 10.2A Standard footprint: 58.4x61.0x11.2mm 2.30”x2.40”x0.44” (without heat spreader) 58.4x61.0x12.7mm (2.30”x2.40”x0.50”) (with heat spreader) Industry standard pin out Monotonic startup into normal and pre-bias
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EN60950-1)
H48SA53010,
4V/10
H48SA53010
H48SA
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H48SA53010NNFH
Abstract: No abstract text available
Text: FEATURES High efficiency: 94.2% @ 54V/ 10.2A Standard footprint: 58.4x61.0x11.2mm 2.30”x2.40”x0.44” (without heat spreader) 58.4x61.0x12.7mm (2.30”x2.40”x0.50”) (with heat spreader) Industry standard pin out Monotonic startup into normal and pre-bias
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EN60950-1)
H48SA53010,
4V/10
H48SA53010
H48SA53010NNFH
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back Tunnel diode
Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
Text: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,
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schematic diagram of energy saving device
Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
Text: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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DIM3R3300
Abstract: HLDP ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY back Tunnel diode TUNNEL DIODE
Text: FEATURES High efficiency 98% @ 48Vin, 300W Size: 70.6x36.8x12.7mm 2.78”x1.45”x0.5” Standard footprint Industry standard pin out Input OVP, UVLO, Output OCP, OVP, OTP 8W (3.3Vdc or 5.0Vdc) of isolated management power for module self or other
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48Vin,
V/100mA
72Vdc
QS9000,
OHSAS18001
60a-es
DIM3R3300
HLDP
ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY
back Tunnel diode
TUNNEL DIODE
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tps59610
Abstract: thermistor d503 TP218 IC TPS59124
Text: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and
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SLUU465
TPS59610EVM-634
TPS59610
TPS51120
TPS54326
TPS59124
TPS51100
TPS74801
CSD86330Q3D)
thermistor d503
TP218 IC
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kEJ capacitor
Abstract: back Tunnel diode
Text: Inside Vantis' EE CMOS PLD Technology 'V BEYOND PERFORMANCE TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which
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798v
Abstract: PICMG 3.0 vrtn back Tunnel diode bf 333 transistor DATASHEET
Text: FEATURES High efficiency 98% @ 48Vin, 300W Size: 70.6x36.8x12.7mm 2.78”x1.45”x0.5” Standard footprint Industry standard pin out Input OVP, UVLO, Output OCP, OVP, OTP 8W (3.3Vdc or 5.0Vdc) of isolated management power for module self or other
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48Vin,
V/100mA
72Vdc
QS9000,
OHSAS18001
60a-es
798v
PICMG 3.0 vrtn
back Tunnel diode
bf 333 transistor DATASHEET
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