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Catalog Datasheet	MFG & Type	Document Tags	PDF
TV210T018S4PV Abstract: No abstract text available Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s	Original	TV210T. 11-Mar-11 TV210T018S4PV	PDF
TV210T018S4PV Abstract: TV210T TV210T043S4PV SM8S33A equivalent Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s	Original	TV210T. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TV210T018S4PV TV210T TV210T043S4PV SM8S33A equivalent	PDF
Selector Guide Abstract: do-218ab DO218AB Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications TABLE OF CONTENTS	Original	VMN-SG2163-1312 Selector Guide do-218ab DO218AB	PDF
Untitled Abstract: No abstract text available Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s	Original	TV210T. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF