U1 3150 TRANSISTOR Search Results

U1 3150 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

U1 3150 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF
amplifier TRANSISTOR 12 GHZ Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927	PDF
smd transistor 6g Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance	Original	BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component	PDF
BLS7G2933S-150 Abstract: radar amplifier s-band SOT922-1 JESD625-A Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A	PDF
BLS7G2933S-150 Abstract: a 3150 data sheet JESD625-A Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
Untitled Abstract: No abstract text available Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS7G2933S-150	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
c2328a Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)	Original	O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors	PDF
Untitled Abstract: No abstract text available Text: 19-2155; Rev 0; 10/01 Single 500Mbps LVDS Line Receiver in SC70 Features ♦ Space-Saving SC70 Package 50% Smaller than SOT23 ♦ Guaranteed 500Mbps Data Rate ♦ Low 250ps (max) Pulse Skew ♦ High-Impedance LVDS Inputs When Powered Off Allow Hot Swapping	Original	500Mbps MAX9130 500Mbps 250MHz) ANSI/TIA/EIA-644 f-Nov-2008	PDF
VIPER L2A RoHS Abstract: Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK Text: PL 3120 / PL 3150® Power Line Smart Transceiver Data Book @ ® Ve r s i o n 2 005-0154-01C Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, Neuron, LONMARK, 3120, 3150, the Echelon logo, and the LONMARK logo are registered trademarks of Echelon Corporation. LonMaker, LNS, i.LON, ShortStack, and LonSupport are trademarks of	Original	005-0154-01C S23-S29, VIPER L2A RoHS Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK	PDF
005-0139-01D Abstract: FT3150 P20 FT-X1 FT-X1 X2 ftt-10a FT3150 ft3120 FCC-801-M3-16A Echelon FTT-10A ISO 14230 Text: FT 3120 / FT 3150® Smart Transceiver Data Book @ ® 005-0139-01D Echelon, LON, LONWORKS, Neuron, 3120, 3150, LonTalk, NodeBuilder, LNS, LonMaker, i.LON, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries.	Original	005-0139-01D 005-0139-01D FT3150 P20 FT-X1 FT-X1 X2 ftt-10a FT3150 ft3120 FCC-801-M3-16A Echelon FTT-10A ISO 14230	PDF
AN1103 ST Abstract: AN1103 back-emf motor application note ST72141 TS274 zero crossing Text: AN1103 APPLICATION NOTE IMPROVED B-EMF DETECTION FOR LOW-SPEED AND LOW-VOLTAGE APPLICATIONS WITH ST72141 by Microcontroller Division Applications The ST72141 Microcontroller has been designed by STMicroelectronics for BLDC motor drives. Optimized for sensorless motor control, based on back-EMF zero-crossing detection	Original	AN1103 ST72141 ST72141 AN1103 ST AN1103 back-emf motor application note TS274 zero crossing	PDF
echelon FT-x3 Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r Text: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of	Original	05-0199-01A TPT/XF-1250 echelon FT-x3 neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r	PDF

Series 5000 Chip Data Book Abstract: echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000 Text: Series 5000 Chip Data Book 0 0 5 - 0 1 9 9 - 0 1B Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of	Original	TPT/XF-1250 Series 5000 Chip Data Book echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000	PDF
LM565 equivalent Abstract: missile irig tones ic lm565 LM107 substitution IRIG equivalent schematic of LM107 LM565 IRIG am output circuit IRIG modulator LM1596 Text: INTRODUCTION The phase locked loop has been found to be a useful element in many types of communication systems It is used in two fundamentally different ways 1 as a demodulator where it is used to follow phase or frequency modulation and (2) to track a carrier or synchronizing signal which may	Original		PDF
transistor top200yai Abstract: TOPSWITCH TOP200YAI TOP200Yai equivalent furukawa TEX-E EN 50065-1 PLT-21 PLT-20 Z2180U EN50065-1 Text: ® TOPSwitch Power Supply for Echelon® PLT-20 Power Line Transceiver Design Note DN-13 Introduction A TOPSwitch power supply is ideally suited to power the Echelon PLT-20 power line transceiver control node. TOPSwitch requires 50% fewer components compared with a discrete	Original	PLT-20 DN-13 transistor top200yai TOPSWITCH TOP200YAI TOP200Yai equivalent furukawa TEX-E EN 50065-1 PLT-21 Z2180U EN50065-1	PDF
echelon FT-x1 Abstract: DBC2C20 EN14908 005-0139-01D EN14908-1 elektronik DDR FT-X1 NCB15 U1 U FT 3120 and FT 3150 Smart Transceiver Text: FTXL Hardware Guide 078-0364-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. FTXL, 3190, and ShortStack are trademarks of Echelon Corporation.	Original	78-0364-01A echelon FT-x1 DBC2C20 EN14908 005-0139-01D EN14908-1 elektronik DDR FT-X1 NCB15 U1 U FT 3120 and FT 3150 Smart Transceiver	PDF
toko a50 Abstract: 1820-2000 WBC1-1TL DC1027A LT5568 Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Up or Downconverting Applications Noise Figure: 9.3dB Typical at 900MHz Output Conversion Gain: 2.4dB Typical IIP3: 9dBm Typical at ICC = 10mA Adjustable Supply Current: 4mA to 13.4mA	Original	LT5560 01MHz 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm LT5537 toko a50 1820-2000 WBC1-1TL DC1027A LT5568	PDF
WBC1-1TL Abstract: marking LCBX LCBX DC1027A LT5560 HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1 Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5560 is a low power, high performance broadband active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only	Original	LT5560 01MHz LT5560 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm WBC1-1TL marking LCBX LCBX DC1027A HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1	PDF
A844V0101 Abstract: No abstract text available Text: UM10731 SSL3401DB1174 7 W mains dimmable MR16/12 V driver for GU5.3 22 mm Rev. 1.1 — 14 November 2013 User manual Document information Info Content Keywords SSL3401DB1174, board version A844V0101, MR16 LED driver, mains dimmable, constant current, driver, low voltage supply, AC-to-DC	Original	UM10731 SSL3401DB1174 MR16/12 SSL3401DB1174, A844V0101, SSL3401 SSL3401DB1174. A844V0101	PDF
Untitled Abstract: No abstract text available Text: w en zr ISJ ÇD ro a ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERA TURE OPERA TION This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended temperature ranges to +150°C. Superior	OCR Scan		PDF
diode BYG 220 Abstract: A 3121 IC 3144E A3121 A3121EU A3122 A3123 GH-038 3141E byg 220 Text: 3121, 3122 , a n d 3123 D : IO So> i NJ CO >. Ì $ i 00 2. HALL-EFFECT SWITCHES FOR HIGH-TEMPERA TURE OPERA TION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both tem	OCR Scan	PH-003A diode BYG 220 A 3121 IC 3144E A3121 A3121EU A3122 A3123 GH-038 3141E byg 220	PDF

U1 3150 TRANSISTOR Search Results

U1 3150 TRANSISTOR Result Highlights (5)

U1 3150 TRANSISTOR Datasheets Context Search

transistor d 1302

amplifier TRANSISTOR 12 GHZ

smd transistor 6g

BLS7G2933S-150

BLS7G2933S-150

Untitled

Untitled

Untitled

c2328a

Untitled

VIPER L2A RoHS

005-0139-01D

AN1103 ST

echelon FT-x3

Series 5000 Chip Data Book

LM565 equivalent

transistor top200yai

echelon FT-x1

toko a50

WBC1-1TL

A844V0101

Untitled

Untitled

diode BYG 220