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    U3110ZPBF Price and Stock

    Infineon Technologies AG IRLU3110ZPBF

    MOSFET N-CH 100V 42A IPAK
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    DigiKey IRLU3110ZPBF Tube 444 3,000
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    Newark IRLU3110ZPBF Bulk 1
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    RS IRLU3110ZPBF Bulk 5
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    Rochester Electronics IRLU3110ZPBF 14,783 1
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    TME IRLU3110ZPBF 147 1
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    Chip One Stop IRLU3110ZPBF Tube 976 0 Weeks, 1 Days 1
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    EBV Elektronik IRLU3110ZPBF 143 Weeks 3,000
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    International Rectifier IRLU3110ZPBF

    HEXFET Power MOSFET Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA ; ECCN: EAR99
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    ComSIT USA IRLU3110ZPBF 228
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    Component Electronics, Inc IRLU3110ZPBF 525
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    U3110ZPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ISD 1820 P

    Abstract: irlr3110
    Text: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description


    Original     		97175B IRLR3110ZPbF IRLU3110ZPbF ISD 1820 P irlr3110 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description


    Original     		97175B IRLR3110ZPbF IRLU3110ZPbF PDF

    AN-1005

    Abstract: ISD 1820 P
    Text: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ


    Original     		7175A IRLR3110ZPbF IRLU3110ZPbF AN-1005 ISD 1820 P PDF

    IRLR3110ZPBF

    Abstract: U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110
    Text: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ


    Original     		7175A IRLR3110ZPbF IRLU3110ZPbF IRLR3110ZPBF U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97175 AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ


    Original     		IRLR3110ZPbF IRLU3110ZPbF PDF