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    U9210 Search Results

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    U9210 Price and Stock

    Vishay Siliconix IRFU9210PBF

    MOSFET P-CH 200V 1.9A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU9210PBF Tube 2,681 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77529
    • 10000 $0.675
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    Bristol Electronics IRFU9210PBF 1,650
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 -
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    Vishay Siliconix IRFU9210

    MOSFET P-CH 200V 1.9A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU9210 Tube 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.6
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    Rochester Electronics LLC SFU9210TU

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFU9210TU Bulk 952
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.32
    • 10000 $0.32
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    JRH Electronics 804-001-06ZNU9-210SA

    MIGHT MOUSE CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 804-001-06ZNU9-210SA Bulk 1
    • 1 $901.38
    • 10 $901.38
    • 100 $901.38
    • 1000 $901.38
    • 10000 $901.38
    Buy Now

    Powell Electronics 804-001-06ZNU9-210SA

    CIRCULAR MIL SPEC CONNECTOR 210P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 804-001-06ZNU9-210SA Bag 1
    • 1 $1469.86
    • 10 $1469.86
    • 100 $406.4
    • 1000 $406.4
    • 10000 $406.4
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    U9210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95027 IRFR9210PbF U9210PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9210PbF 2 www.irf.com IRFR/U9210PbF www.irf.com 3 IRFR/U9210PbF 4 www.irf.com IRFR/U9210PbF www.irf.com 5 IRFR/U9210PbF 6 www.irf.com IRFR/U9210PbF D-Pak TO-252AA Package Outline


    Original
    PDF IRFR9210PbF IRFU9210PbF IRFR/U9210PbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V


    Original
    PDF SFR/U9210 -200V

    Vishay DaTE CODE

    Abstract: international rectifier code EIA-541 IRFR120 IRFU120 U120
    Text: PD - 95027A IRFR9210PbF U9210PbF • Lead-Free Document Number: 91281 12/14/04 www.vishay.com 1 IRFR/U9210PbF Document Number: 91281 www.vishay.com 2 IRFR/U9210PbF Document Number: 91281 www.vishay.com 3 IRFR/U9210PbF Document Number: 91281 www.vishay.com


    Original
    PDF 5027A IRFR9210PbF IRFU9210PbF IRFR/U9210PbF 12-Mar-07 Vishay DaTE CODE international rectifier code EIA-541 IRFR120 IRFU120 U120

    U120

    Abstract: IRF p-CHANNEL EIA-541 IRFR120 IRFU120 Diode P 619 P-Channel irf
    Text: PD - 95027A IRFR9210PbF U9210PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9210PbF 2 www.irf.com IRFR/U9210PbF www.irf.com 3 IRFR/U9210PbF 4 www.irf.com IRFR/U9210PbF www.irf.com 5 IRFR/U9210PbF 6 www.irf.com IRFR/U9210PbF Peak Diode Recovery dv/dt Test Circuit


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    PDF 5027A IRFR9210PbF IRFU9210PbF IRFR/U9210PbF Wa10PbF U120 IRF p-CHANNEL EIA-541 IRFR120 IRFU120 Diode P 619 P-Channel irf

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V


    Original
    PDF -200V SFR/U9210 O-252

    macbook pro 13

    Abstract: mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50
    Text: Acer Acer Acer Acer Aspire 5230 JAWD0 Aspire 5410T (MS2272) Aspire 5410TZ (MS2272) Aspire 5520 series (ICW50) 13.71 7.27 7.27 10.16 1.34 1.38 1.38 1.44 Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Aspire 5635 (ZR6) Aspire 5710 series (JDW50)


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    PDF AOD150 KAV10) MS2229) JAT10) 3410T 3810T macbook pro 13 mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50

    U420B

    Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
    Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary


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    PDF Power247TM, U420B IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9210 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 3 .0 ß ■ Lower Input Capacitance lD = -1.6 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @


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    PDF SFR/U9210 -200V 1008C) 82o95

    fairchild 999

    Abstract: 999 fairchild
    Text: Advanced SFR/U9210 P o w e r MOSFET FEATURES B • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge V ^ D S o n l D ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V


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    PDF SFR/U9210 -200V fairchild 999 999 fairchild

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9210 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V


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    PDF SFR/U9210 -200V

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = -200V


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    PDF -200V SFR/U9210

    9211

    Abstract: irfu9210 20A, 50V, P-Channel U9210 IRFR9210
    Text: IRFR9210/9211 U9210/9211 P-CHANNEL POWER MOSFETS FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lo w er input cap acitance • Extended sa fe operating area


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    PDF IRFR9210/9211 IRFU9210/9211 IRFR9210/U9210 -200V IRFR9211/U9211 -150V 9211 irfu9210 20A, 50V, P-Channel U9210 IRFR9210

    F 9212

    Abstract: Z024 irfu9210 IRFR9212
    Text: SAM SUN G E L E C T R O N I C S INC b4E D • 7^4142 IRFR9210/9212 U9210/9212 0G1 2 37 5 414 « S r i G K P-CHANNEL POWER MOSFETS FEATURES • L o w e r R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF 0G12375 IRFR9210/9212 IRFU9210/9212 IRFR9210/U9210 -200V IRFR921 2/U921 IRFR9210/9212 IRFU9210/9212 F 9212 Z024 irfu9210 IRFR9212