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    onsemi CD4069UBCN

    IC INVERTER 6CH 1-INP 14MDIP
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    DigiKey CD4069UBCN Tube
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    onsemi CD4049UBCN

    IC INVERTER 6CH 1-INP 16DIP
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    Vishay Intertechnologies IRHLUBCN7970Z4S

    Cap Ceramic 0.1uF 50V X7R 10% SMD 1206 150?C Plastic T/R - Tape and Reel (Alt: VJ1206Y104KXAAT)
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    Avnet Americas IRHLUBCN7970Z4S Reel 3,000 10 Weeks 3,000
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    Infineon Technologies AG IRHLUBCN730Z4

    - Bulk (Alt: IRHLUBCN730Z4)
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    Infineon Technologies AG JANSR2N7626UBCN

    Transistor MOSFET P-Channel 60V 0.53A 3-Pin UBCN - Bulk (Alt: JANSR2N7626UBCN)
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    Avnet Americas JANSR2N7626UBCN Bulk 30 Weeks, 2 Days 25
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    UBCN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. INCH-POUND MIL-PRF-19500/376K 30 March 2013 SUPERSEDING MIL-PRF-19500/376J 20 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,


    Original     		PDF MIL-PRF-19500/376K MIL-PRF-19500/376J 2N2484, 2N2484UA, 2N2484UB, 2N2484UBC, 2N2484UBN, 2N2484UBCN

    BC 241

    Abstract: ABB Group EM 235 setting D-346 gp 431
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF SH7410 E8000 BC 241 ABB Group EM 235 setting D-346 gp 431

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. INCH-POUND MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/337L MIL-PRF-19500/337K 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBCNA,

    2N7626

    Abstract: 2N7626UB IRHLUB7970Z4 MOSFET cross-reference 2N7626UBN 3PAD jan,tx series semiconductors um 031 diode
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 June 2010. INCH-POUND MIL-PRF-19500/745B 18 March 2010 SUPERSEDING MIL-PRF-19500/745A 26 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,


    Original     		PDF MIL-PRF-19500/745B MIL-PRF-19500/745A 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, MIL-PRF-19500. 2N7626 2N7626UB IRHLUB7970Z4 MOSFET cross-reference 2N7626UBN 3PAD jan,tx series semiconductors um 031 diode

    JANSR2N7626UB

    Abstract: JANSF2N7626UB IRHLUBN7970Z4 IRHLUBC7970Z4 IRHLUB7930Z4 JANSR2N7626UBN PD-94764L
    Text: PD-94764L IRHLUB7970Z4 JANSR2N7626UB 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/745 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB


    Original     		PDF PD-94764L IRHLUB7970Z4 JANSR2N7626UB MIL-PRF-19500/745 IRHLUB7930Z4 JANSF2N7626UB IRHLUBN7970Z4, IRHLUBC7970Z4, JANSF2N7626UB IRHLUBN7970Z4 IRHLUBC7970Z4 JANSR2N7626UBN PD-94764L

    2N7616

    Abstract: IRHLUBC770Z4 ubcn 2N7616UB 2N7616UBN 2N7616UBCN MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET cross-reference MIL-PRF-19500/744 irhlubn770z4
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2010. MIL-PRF-19500/744A 4 February 2010 SUPERSEDING MIL-PRF-19500/744 21 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


    Original     		PDF MIL-PRF-19500/744A MIL-PRF-19500/744 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, MIL-PRF-19500. 2N7616 IRHLUBC770Z4 ubcn 2N7616UB 2N7616UBN 2N7616UBCN MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET cross-reference MIL-PRF-19500/744 irhlubn770z4

    PD-95813H

    Abstract: JANSR2N7616UB JANSR2n7616 IRHLUBC770Z4
    Text: PD-95813H IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB


    Original     		PDF PD-95813H IRHLUB770Z4 JANSR2N7616UB MIL-PRF-19500/744 IRHLUB730Z4 JANSF2N7616UB IRHLUBN770Z4, IRHLUBC770Z4, PD-95813H JANSR2n7616 IRHLUBC770Z4

    JANSR2N7616UB

    Abstract: JANSR2n7616 JANSF2N7616UB JANSF2N7616UBCN JANSR2N7616UBC JANSF2N7616UBC IRHLUBC770Z4 JANSR2N76 IRHLUB7970Z4 irhlubn770z4
    Text: PD-95813G IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB


    Original     		PDF PD-95813G IRHLUB770Z4 JANSR2N7616UB MIL-PRF-19500/744 IRHLUB770Z4 IRHLUB730Z4 JANSF2N7616UB IRHLUBN770Z4, IRHLUBC770Z4, JANSR2N7616UB JANSR2n7616 JANSF2N7616UB JANSF2N7616UBCN JANSR2N7616UBC JANSF2N7616UBC IRHLUBC770Z4 JANSR2N76 IRHLUB7970Z4 irhlubn770z4

    transistor A562

    Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,


    Original     		PDF MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE

    JANSR2N7626UB

    Abstract: JANSF2N7626UBC JANSR2N7626UBN IRHLUBN7970Z4 IRHLUB770Z
    Text: PD-94764L IRHLUB7970Z4 JANSR2N7626UB 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/745 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB


    Original     		PDF PD-94764L IRHLUB7970Z4 JANSR2N7626UB MIL-PRF-19500/745 IRHLUB7970Z4 IRHLUB7930Z4 JANSF2N7626UB IRHLUBN7970Z4, IRHLUBC7970Z4, JANSR2N7626UB JANSF2N7626UBC JANSR2N7626UBN IRHLUBN7970Z4 IRHLUB770Z

    JANSR2N7616UB

    Abstract: JANSF2N7616UB JANSR2n7616 JANSF2N7616UBCN IRHLUBN770Z4 JANSF2N7616UBC
    Text: PD-95813G IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB


    Original     		PDF PD-95813G IRHLUB770Z4 JANSR2N7616UB MIL-PRF-19500/744 IRHLUB770Z4 IRHLUB730Z4 JANSF2N7616UB IRHLUBN770Z4, IRHLUBC770Z4, JANSR2N7616UB JANSF2N7616UB JANSR2n7616 JANSF2N7616UBCN IRHLUBN770Z4 JANSF2N7616UBC

    2N2907AUB

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May 2013. INCH-POUND MIL-PRF-19500/291U 16 February 2013 SUPERSEDING MIL-PRF-19500/291T 23 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/291U MIL-PRF-19500/291T 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB

    2N2369AU

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 28 April 2013. INCH POUND MIL-PRF-19500/317P 28 January 2013 SUPERSEDING MIL-PRF-19500/317N 27 December 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/317P MIL-PRF-19500/317N 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB, 2N2369AU

    2N7616

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 July 2013. INCH-POUND MIL-PRF-19500/744D 4 January 2013 SUPERSEDING MIL-PRF-19500/744C 1 May 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


    Original     		PDF MIL-PRF-19500/744D MIL-PRF-19500/744C 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, MIL-PRF-19500. 2N7616

    msc 5511

    Abstract: i 7814 hs H713 PT001 3tf ei3 TNY 766 mba sem 1 movi UI02 640x8
    Text: 5 7 -y . 5 / h - M O S H ftillS M O S Integrated Circuit PD78146,78148 8 1i y h • *y ^ JMPD78148 J, V 7 h • T ^ n n y i f j “ ^ ftJftH: jS L £ J i i 2 / N - VTR#£'<7> v ? ; u • v - x n n * & w t t zfc m -i& m T '? 0 • ?-fA P R O M t tz I t EPROM Sl&


    OCR Scan     		PDF uPD78146 uPD78148 JMPD78148 PD78P148 PD78148 PD78146 PD78148 msc 5511 i 7814 hs H713 PT001 3tf ei3 TNY 766 mba sem 1 movi UI02 640x8

    FCQ10A06

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE FCQ10A06 io a / bov 3.11.1221 FEATURES o S im ila r to T 0 - 2 2 0 A B C a se o F u lly M o ld ed Is o la tio n o D u al D io d es - C a th o d e C o m m o n o L o w F o r w a r d V o lta g e D ro p o L o w P o w e r L o ss , H ig h E ffic ie n c y


    OCR Scan     		PDF FCQ10A06 FCQ10A06