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    UHF GERMANIUM DIODE Search Results

    UHF GERMANIUM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    UHF GERMANIUM DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AF289

    Abstract: Q62701-F92 Germanium Transistor Germanium power
    Text: ESC D • Ô235b05 DÜQ4QÖ3 ^ « S I E G PIMP Germanium UHF Transistor AF289 - SIEMENS AKTIENGESELLSCHAF - -T-JN07 AF 289 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly intended


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    023SbOS AF289 T0119. Q62701-F92 voltage11 Q62701-F92 Germanium Transistor Germanium power PDF

    Germanium power

    Abstract: gpb19
    Text: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended


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    023SbOS Germanium power gpb19 PDF

    transistor D 1557

    Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
    Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly


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    fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power PDF

    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


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    fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S PDF

    transistor d 1556

    Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
    Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly


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    flE35b05 T0119. q62701-f87 y12bl transistor d 1556 d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor AF 279 PDF

    IR 732 c

    Abstract: IR 733 IR 732 AAY 53 Q62601-X731 GD731 AAY 45 diode germanium GO-732 NL 731
    Text: GD 731 GD 732 GD 733 G erm aniu m -S p itzendioden Die Germanium-Spitzendiode GD 731, GD 732 und GD 733 sind Spezialdioden mit hohem Richtwirkungsgrad bis zum UHF-Bereich. Sie sind für hochohmige Spitzengleichrichter­ schaltungen geeignet bei kleiner Streubreite im quadratischen Kennlinienbereich und geringer


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    Q62901-B6) Q62601-X731 Q62601-X732 Q62601-X733 Q62901-B6 IR 732 c IR 733 IR 732 AAY 53 Q62601-X731 GD731 AAY 45 diode germanium GO-732 NL 731 PDF

    pm4020

    Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
    Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor PDF

    cross reference zener diodes

    Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
    Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37


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    tunnel diode General Electric

    Abstract: 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric BD400 TUNNEL DIODE tunnel diode high frequency 1N3712
    Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


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    TD400 BD400 tunnel diode General Electric 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric TUNNEL DIODE tunnel diode high frequency 1N3712 PDF

    2N3640

    Abstract: No abstract text available
    Text: 2N3640 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3640 Availability Online Store


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    2N3640 2N3640 O-106 STV3208 PDF

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


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    Germanium diode

    Abstract: AAZ15 germanium diode AAZ17 diode AA143 Germanium Diode aa143 DIODE AA143 AAZ15 AAZ18 AAY30 germanium diode GOLD
    Text: B K C INTERNATIONAL 1 -4 30E D BKC International Electronics Inc. • 117W3 0000314 Ö ■ ' T ’O V ö ‘7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 TYPE AA143 Low forward voltage drop


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    AA143 500mA 100uA MIL-S-19500, Germanium diode AAZ15 germanium diode AAZ17 diode AA143 Germanium Diode aa143 DIODE AA143 AAZ15 AAZ18 AAY30 germanium diode GOLD PDF

    1N3716

    Abstract: 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent
    Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


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    TD400 BD400 1N3712-21 1N3716 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent PDF

    IN5711

    Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
    Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100


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    CB-26) 1N3595DHD CB-102) /10mA CB-101) IN5711 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595 PDF

    TXVB-2835

    Abstract: 7 inches tablet TX-2835 TXB-2835 TXV-2835 "5082-2835" 041 germanium DIODE
    Text: HEWLETT-PACKARDn cnpnts hoe 44475Ö4 d OOOSb?11] S □ HIGH RELIABILITY SCHOTTKY SWITCHING DIODES HEW LETT PACKARD TX-2835 TXV-2835 TXB-2835 TXVB-2835 Generic 5082-2835 Features SUITABLE FOR S P A C E APPLICATIONS 0.41 (0.016f 0.36 [0514) LOW TURN-ON V O LT A G E


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    G00Sb7c] MIL-S-19500 TX-2835 TXVB-2835 7 inches tablet TXB-2835 TXV-2835 "5082-2835" 041 germanium DIODE PDF

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


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    AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128 PDF

    TIS69 equivalent

    Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
    Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the


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    2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26 PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test


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    SC08b MLB049 TRANSISTOR SMD MARKING CODE NM thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor PDF

    BGB741L7ESD

    Abstract: BGB741L7 Bluetooth Jammer RF micro devices RF TRANSISTOR 10GHZ AN207 C166 mipi PCB layout LNA 2.4G f1859
    Text: BGB741L7ESD BGB741L7ESD as Low Noise Amplifier for Applications in 300MHz to 5GHz A pplication Note AN207 Revision: Rev. 1.0 2010-06-28 RF and Protection Devices Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    BGB741L7ESD BGB741L7ESD 300MHz AN207 AN207, 300MHz BGB741L7 Bluetooth Jammer RF micro devices RF TRANSISTOR 10GHZ AN207 C166 mipi PCB layout LNA 2.4G f1859 PDF

    Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    Abstract: No abstract text available
    Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way


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    1990s, Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


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    B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor PDF

    pin diagram for IC cd 1619 fm receiver

    Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
    Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.


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    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF