Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPF1 Search Results

    SF Impression Pixel

    UPF1 Price and Stock

    Siemens 3SB02-UPF1

    3Sb02-Upf1 Illuminated 120V-Ac Pushbutton
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 3SB02-UPF1
    • 1 $89.45
    • 10 $31.67
    • 100 $30.02
    • 1000 $30.02
    • 10000 $30.02
    		Buy Now

    Nichicon Corporation UPF1V152MHH

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPF1V152MHH 12,995 4
    • 1 -
    • 10 $1.65
    • 100 $1.0312
    • 1000 $0.5775
    • 10000 $0.5445
    		Buy Now

    Nichicon Corporation UPF1V331MPH1TD

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPF1V331MPH1TD 9,500 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.15
    • 10000 $0.1013
    		Buy Now

    Nichicon Corporation UPF1H100MDH1TA

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPF1H100MDH1TA 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Nichicon Corporation UPF1H4R7MDH1TA

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPF1H4R7MDH1TA 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more UPF1 price and stock on Findchips.com

    UPF1 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF1010 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1010-178 Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010F Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010F Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010P Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010P Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1030 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1030F Cree 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1030F Cree FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1030P Cree FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF105-105 Digital Power AC/DC POWER SUPPLY SNGL OUT 5V 16A 120W Original PDF
    UPF105-124 Digital Power AC/DC POWER SUPPLY SNGL OUT 24V 5A 120W Original PDF
    UPF105-148 Digital Power AC/DC POWER SUPPLY SNGL OUT 48V 2.5A 120W Original PDF
    UPF105-230 Digital Power AC/DC POWER SUPPLY DUAL OUT 5V 16A 120W Original PDF
    UPF105-301 Digital Power AC/DC POWER SUPPLY TRI OUT 12V 10A 120W Original PDF
    UPF105-408 Digital Power AC/DC POWER SUPPLY QUAD OUT 24V 13A 120W Original PDF
    UPF1060 Cree 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1060 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1060F Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1060P Cree FET Transistor, 60W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J216

    Abstract: UPF1030 J2-13
    Text: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1030 30dBc J216 UPF1030 J2-13

    Untitled

    Abstract: No abstract text available
    Text: RELEASED DATA SHEET UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers Features: 1 1 1 1 1 1 1 1 Active Power Factor Correction PFC 75% typical efficiency EN55022-B conducted Up to 4 outputs Compact 6.0" x 3.3" x 1.4" size UL, cUL, VDE and CE


    Original     		PDF UPF105 EN55022-B 90-250Vac 115Vac 500Hz.

    ultrarf

    Abstract: UPF18030 MRF18030
    Text: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF18030 100kHz 270mA 270mA, ultrarf UPF18030 MRF18030

    MRF19030

    Abstract: UPF18030-095
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 UPF18030-095 MRF19030

    cree rf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P

    Untitled

    Abstract: No abstract text available
    Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F 540mA 540mA,

    potentiometer 1k ohm

    Abstract: L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117
    Text: UPF19060 60W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF19060 MRF19060 potentiometer 1k ohm L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117

    ultrarf

    Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
    Text: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in


    Original     		PDF UPF18045-159 ultrarf UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805

    ultrarf

    Abstract: MRF19090 UPF19090
    Text: UPF19090 90W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF19090 IS-95 30kHz 100kHz 800mA 800mA, ultrarf MRF19090 UPF19090

    UPF1010

    Abstract: f940 ultrarf
    Text: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1010 30dBc UPF1010 f940 ultrarf

    DP100

    Abstract: EN55022-B UPF105-105 UPF105-124 UPF105-148 US100 Molex CE certificate
    Text: flexibility C O R P O R A T I O N S E R I E S UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers • Active Power Factor Correction PFC • 75% typical efficiency • EN55022-B conducted • Up to 4 outputs • Compact 6.0” x 3.3” x 1.4”


    Original     		PDF UPF105 EN55022-B 90-250Vac DP0201 94538-3158CA DP100 UPF105-105 UPF105-124 UPF105-148 US100 Molex CE certificate

    UPF150-301

    Abstract: UPF150-401 UPF150 DP150 PH 36A UPF150-408 EN55022-B UPF150-234 US150 UPF1
    Text: flexibility C O R P O R A T I O N S E R I E S UPF150 Series Universal Input Power Factor Corrected 150 Watt Switchers •41920 Christy Street •Fremont, California •94538-3158 •510-657-2635 •Fax: 510-657-6634 •[email protected] •www.digipwr.com


    Original     		PDF UPF150 EN55022-B 90-250Vac 16AWG. UPF155 UPF155 DP0201 UPF150-301 UPF150-401 DP150 PH 36A UPF150-408 UPF150-234 US150 UPF1

    F1 J36

    Abstract: ultrarf UPF1080
    Text: URFDB Sec 07_1080 11/3/99 10:53 AM Page 7-1 UPF1080 80W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1080 30dBc F1 J36 ultrarf UPF1080

    ultrarf

    Abstract: J216
    Text: UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P ultrarf J216

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Text: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109

    J216

    Abstract: UPF1030P UPF1030 UPF1030F J156 J-146
    Text: UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P UPF1030 350mA J216 UPF1030P UPF1030F J156 J-146

    UPF1080F

    Abstract: UPF1080 J120 MOSFET upf1080p
    Text: UPF1080 80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1080 30dBc UPF1080F UPF1080P UPF1080 600mA UPF1080F J120 MOSFET upf1080p

    ultrarf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB


    Original     		PDF UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P

    N channel mosfet

    Abstract: No abstract text available
    Text: UPF1N50 SURFACE MOUNT N CHANNEL MOSFET W ATE R TOW N DIVISI ON PRELIMINARY DESCRIPTION KEY FEATURES The UPF1N50 is ideal for ultra small motor control and switch mode power supply applications. The Powermite 3 is designed for surface mounting using vapor phase,


    Original     		PDF UPF1N50 UPF1N50 MSC1541 N channel mosfet

    ultrarf

    Abstract: MRF19030
    Text: UPF19030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for PCN and PCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power


    Original     		PDF UPF19030 MRF19030 IS-97 Adjace65 ultrarf MRF19030

    MRF19030

    Abstract: UPF18030-095 IS954
    Text: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UPF18030-095 MRF19030 250mA, UPF18030-095 MRF19030 IS954

    GP 101 GPS

    Abstract: ultrarf 01UF ATC100 MRF19090 UPF19090
    Text: UPF19090 90W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, EDGE, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF19090 MRF19090 IS-95 GP 101 GPS ultrarf 01UF ATC100 MRF19090 UPF19090

    UPF1060

    Abstract: POWER 28V 3A 60W ultrarf
    Text: URFDB Sec 06_1060 11/3/99 10:51 AM Page 6-1 UPF1060 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,


    Original     		PDF UPF1060 30dBc UPF1060 POWER 28V 3A 60W ultrarf

    UPF1060F

    Abstract: UPF1060P UPF1060 POWER 28V 3A 60W J027
    Text: UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1060 30dBc UPF1060F UPF1060P UPF1060 UPF1060F UPF1060P POWER 28V 3A 60W J027