SAC387
Abstract: NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387
Text: VISHAY SILICONIX Power MOSFETs Application Note 914 "PowerPAK 1212-8", The Proven Automotive Package By Kandarp Pandya INTRODUCTION This application note presents useful information on the PowerPAK 1212-8 to facilitate SQE and design engineers. Vishay introduced the PowerPAK power MOSFET package
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1990s
AN825
17-May-10
SAC387
NXR-1400
tamura solder paste
SN63 PB37 alpha
PowerPAK 1212-8 stencil
ekra e5
SAC387 solder
MIL-STD-750 method 1037
UP78
SAC-387
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vcnl4000 App
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient
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VCNL4000
16-bit
11-Mar-11
vcnl4000 App
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proximity sensor interfacing with microcontroller
Abstract: VCNL4000 analog output Ambient light sensor proximity card Ambient Light Sensor distance measurement using ir mm ir proximity sensor circuit diagram light sensor VCNL4 infrared human motion detection sensor
Text: VISHAY SEMICONDUCTORS Optoelectronics Application Note Designing VCNL4000 into an Application INTRODUCTION The VCNL4000 is a proximity sensor with an integrated ambient light sensor. It is the industry’s first optical sensor to combine an infrared emitter, PIN photodiode, ambient
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VCNL4000
16-bit
01-Nov-10
proximity sensor interfacing with microcontroller
analog output Ambient light sensor
proximity card
Ambient Light Sensor
distance measurement using ir mm
ir proximity sensor circuit diagram
light sensor
VCNL4
infrared human motion detection sensor
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SFERNICE RW
Abstract: SFERNICE RW 16
Text: VISHAY SFER NICE Resistive Products Application Note Fixed Wirewound Enamelled High Dissipation Resistors GROUP ASSEMBLY HORIZONTAL ASSEMBLY It is recommended that resistors should be installed with a distance between centres of approximately twice their diameter to aid dissipation efficiency.
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01-Oct-09
SFERNICE RW
SFERNICE RW 16
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IHLP-3232DZ-5A
Abstract: IHLP-3232CZ-11 IHTH-1125KZ-5A IHLP-3232CZ-01
Text: VISHAY DALE www.vishay.com Magnetics Application Note IHLP Selection Example IHLP-1616 APPLICATIONS L0 H DCR IHEAT TYP. A ISAT (A) RTH (1) PHEAT (2) ET100 (3) K0 (4) (W) K1 (5) DCR IHEAT TYP. (A) ISAT (A) IHLP-1616AB-01 RTH (1) PHEAT (2) ET100 (3) K0 (4)
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IHLP-1616
ET100
IHLP-1616AB-01
IHLP-1616AB-11
IHTH-1125KZ-5A
IHTH-1125MZ-5A
04-Dec-13
IHLP-3232DZ-5A
IHLP-3232CZ-11
IHTH-1125KZ-5A
IHLP-3232CZ-01
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lm2564
Abstract: LM256 LM5642 SOT 23 marked R25 AN-1292 Si4840DY Si4850EY vishay resistor 220k sanyo capacitor SPDT FETs
Text: National Semiconductor Application Note 1292 Chris Richardson September 2003 Introduction ON/SS1 and ON/SS2 pins must also be connected using a 0Ω resistor in the position J2. One of the two SPDT switches S1 and S2 should be left ‘ON’ and the other used to turn the
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R10/R11
C18/C19/R22/R23)
C20/C21R24/R25.
LM5642
AN-1292
lm2564
LM256
SOT 23 marked R25
AN-1292
Si4840DY
Si4850EY
vishay resistor 220k
sanyo capacitor
SPDT FETs
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lm2564
Abstract: No abstract text available
Text: User's Guide SNVA070B – May 2004 – Revised April 2013 AN-1292 LM5642 Evaluation Board 1 Introduction The LM5642 IC is a dual channel, current-mode, synchronous buck converter controller. It can handle input voltages of up to 36V and delivers two independent output voltages from 1.23V up to 90% of the
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SNVA070B
AN-1292
LM5642
lm2564
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4459ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4459ADY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1 P16 - Version for professional and industrial applications cermet 1 W at 40 °C PA16 - Version for professional audio applications (conductive plastic)
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2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7102DN www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si7102DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3410DV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3410DV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7145DP
2002/95/EC
Si7145DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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SiR492DP
SiR492DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1 P16 - Version for professional and industrial applications cermet 1 W at 40 °C PA16 - Version for professional audio applications (conductive plastic)
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4168DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4168DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR878ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1 P16 - Version for professional and industrial applications cermet 1 W at 40 °C PA16 - Version for professional audio applications (conductive plastic)
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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EFB810-3/4-3/Si7145DP
Abstract: No abstract text available
Text: SPICE Device Model Si7145DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7145DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
EFB810-3/4-3/Si7145DP
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Untitled
Abstract: No abstract text available
Text: UFL200CB60P Vishay High Power Products Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage • Optimized for power conversion: welding and industrial
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UFL200CB60P
OT-227
OT-227
2002/95/EC
UFL200CB60P
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR492DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR492DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR468DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR468DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PA16
Abstract: No abstract text available
Text: P16, PA16 Vishay Sfernice Knob Potentiometer FEATURES • Test according to CECC 41000 or IEC 60393-1 P16 - Version for professional and industrial applications cermet 1 W at 40 °C PA16 - Version for professional audio applications (conductive plastic)
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11-Mar-11
PA16
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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Si2369DS
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Definitions VISHAY Vishay Dale Inductor and Magnetic Product Terminology IN T R O D U C T IO N The scope of this application note is to define the terminology associated with inductors and their applications. Some of these terms are listed in the component data sheets. Many terms go beyond the specification of inductors. These terms describe
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06-Mar-02
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