rsb002n06
Abstract: No abstract text available
Text: 2.5V Drive Nch MOSFET RSB002N06 Structure Silicon N-channel MOSFET Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Low voltage drive(2.5V drive). Packaging specifications
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RSB002N06
R1010A
rsb002n06
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RUB002N05
Abstract: No abstract text available
Text: 1.2V Drive Nch MOSFET RUB002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37 0.17
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RUB002N05
R1010A
RUB002N05
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RYB002N05
Abstract: No abstract text available
Text: 0.9V Drive Nch MOSFET RYB002N05 Structure Silicon N-channel MOSFET Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Small package(VMN3). 3)Ultra low voltage drive(0.9V drive). (1) (2) 0.17 0.35 0.6 0.37
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RYB002N05
R1010A
RYB002N05
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rzb002p02
Abstract: vmn3 package vmn3
Text: 1.2V Drive Pch MOSFET RZB002P02 Structure Silicon P-channel MOSFET Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37 0.17
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RZB002P02
R1010A
rzb002p02
vmn3 package
vmn3
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vmn3 package
Abstract: VMN3
Text: Data Sheet 1.2V Drive Nch MOSFET RUB002N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37
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RUB002N02
RUB002N02
Pw10s,
R1120A
vmn3 package
VMN3
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tsmt3
Abstract: tumt3 DSASW0034240 vmn3 package T100 T106 T108 T110 T116 T146
Text: Packaging type Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 A 0.7 1.65 1.65 1.64 C A 1Pin A VMN3 VMT3 EMT5/6 WEMT6 8.0 B B 8.0 4.0 C B 1.1 1.3 1.65 1.65 C 0.46 0.65 0.65 0.72 A 1.8 2.2 2.2
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R1010A
tsmt3
tumt3
DSASW0034240
vmn3 package
T100
T106
T108
T110
T116
T146
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PDF
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TSMT3
Abstract: T100 T106 T108 T110 T116 T146 T148 EMT5 TUMT3
Text: Packaging type Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 8.0 B B 8.0 4.0 1Pin C A A A 0.7 1.65 1.65 1.64 VMN3 VMT3 EMT5/6 WEMT6 C B 1.1 1.3 1.65 1.65 C 0.46 0.65 0.65 0.72 A 1.8 2.2 2.2
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R0039A
TSMT3
T100
T106
T108
T110
T116
T146
T148
EMT5
TUMT3
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DTC144EE
Abstract: DTC144EKA DTC144EM DTC144EUA T106 T146 vmn3 DTC144EU
Text: 100mA / 50V Digital transistors with built-in resistors DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
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100mA
DTC144EB
DTC144EM
DTC144EE
DTC144EUA
DTC144EKA
DTC144EB
R0039A
DTC144EKA
T106
T146
vmn3
DTC144EU
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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R0039A
52P6215E
2SC6144
IMD16A
potential divider
2SA1576UB
DTD513Z
MP6T3
2SCR514
2SA1514K equivalent
2SCR543
2SC6114
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PDF
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rohm Part No. Explanation
Abstract: TSMT6 vmt3
Text: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) 1.2/1.5/1.8 2.5 4 − −
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100mA)
3500mA
O-220FN
O-220FM
rohm Part No. Explanation
TSMT6
vmt3
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vmn3 package
Abstract: rohm suffix "N" vmn3 rohm Part No. Explanation UMT3F T100 T106 TUMT6 T110 T116
Text: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 Polarity ID Unit: 100mA 035=3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) 1.2/1.5/1.8 2.5 4 ― ― C Low IGSS Type
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100mA)
0353500mA
vmn3 package
rohm suffix "N"
vmn3
rohm Part No. Explanation
UMT3F
T100
T106
TUMT6
T110
T116
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UMT3F
Abstract: vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110
Text: Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) Type of MOSFET 1.2/1.5/1.8 2.5 4 − − C Low IGSS Type
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100mA)
3500mA
R1010A
UMT3F
vmn3 package
EMT3F
TSST8
rohm suffix "s"
rohm Part No. Explanation
rohm suffix "N"
T100
T106
T110
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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R0039A
51P6029E
2SA1576UB
2SC1740s equivalent
transistor digital 47k 22k PNP NPN
2sd198
2SC6114
2sc401
2SB1240
2SB1694
2SC5865
2sD2703
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DTA144EB
Abstract: DTA144EE DTA144EKA DTA144EM DTA144EUA T106 T146 VMN3
Text: -100mA / -50V Digital transistors with built-in resistors DTA144EB / DTA144EM / DTA144EE / DTA144EUA / DTA144EKA zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTA144EB 0.22 0.1 zFeatures 1) Built-in bias resistors enable the configuration of
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-100mA
DTA144EB
DTA144EM
DTA144EE
DTA144EUA
DTA144EKA
DTA144EB
DTA144EM
R0039A
DTA144EKA
T106
T146
VMN3
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PDF
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VMN3
Abstract: DTA114EE DTA114EKA DTA114EM DTA114EUA T106 T146
Text: 100mA / 50V Digital transistors with built-in resistors DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
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100mA
DTA114EB
DTA114EM
DTA114EE
DTA114EUA
DTA114EKA
DTA114EB
R0039A
VMN3
DTA114EKA
T106
T146
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pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-Feb.
SC-75A
OT-416
50P5876E
pioneer mosfet audio amp ic
12V ENERGY LIGHT CIRCUIT DIAGRAM
vmn3 package
DTC143T datasheet
TRANSISTOR SMD catalog
Equivalent transistors for UMD2N
smd ya transistor
2SD2211
2SA1576UB
2SC6114
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PDF
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DTC114EM
Abstract: DTC114EE DTC114EKA DTC114EUA T106 T146 dtc114EK vmn3 package VMN3
Text: 100mA / 50V Digital transistors with built-in resistors DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent
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100mA
DTC114EB
DTC114EM
DTC114EE
DTC114EUA
DTC114EKA
DTC114EB
R0039A
DTC114EKA
T106
T146
dtc114EK
vmn3 package
VMN3
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PDF
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2SB1051K
Abstract: 750H ST-100S VMN3 TSST8 lpts 2sb1051
Text: Design Support Document RECOMMENDABLE CONDITION OF SOLDERING SURFACE MOUNTED DEVICE CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING 2/5 RECOMMENDABLE CONDITION OF FLOW SOLDERING
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R1010A
2SB1051K
750H
ST-100S
VMN3
TSST8
lpts
2sb1051
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PDF
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EMT3F
Abstract: TSMT3 vmn3 package T100 T106 T108 T110 T116 T146 T148
Text: Taping specifications Transistor Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 8.0 B B 8.0 4.0 1Pin C A A A 1.65 1.65 VMT3 EMT5/6 MPT3 C B 1.3 1.65 C 0.65 0.65 A 1.8 2.2 2.2 3.1 3.1 3.1 EMT3
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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PSOP
Abstract: asahiglass 2SB1051K 750H ST-100S vmn3 package pine alpha st-100s arakawa chemical
Text: E x c e lle n c e in E le c tr o n ic s Tt\ RECOMMENDABLE CONDITION OF SOLDERING RBHffl TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING
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OCR Scan
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PSOP
Abstract: UMT3F TUMT6 2SB1051K 750H ST-100S EMT3F TUMT3 VMN3
Text: E x c e lle n c e in E le c tr o n ic s Tt\ RECOMMENDABLE CONDITION OF SOLDERING RBHffl TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING
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PDF
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