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    VMN3 PACKAGE Search Results

    VMN3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    VMN3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rsb002n06

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET RSB002N06  Structure Silicon N-channel MOSFET  Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Low voltage drive(2.5V drive).  Packaging specifications


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    RSB002N06 R1010A rsb002n06 PDF

    RUB002N05

    Abstract: No abstract text available
    Text: 1.2V Drive Nch MOSFET RUB002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37 0.17


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    RUB002N05 R1010A RUB002N05 PDF

    RYB002N05

    Abstract: No abstract text available
    Text: 0.9V Drive Nch MOSFET RYB002N05  Structure Silicon N-channel MOSFET  Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Small package(VMN3). 3)Ultra low voltage drive(0.9V drive). (1) (2) 0.17 0.35 0.6 0.37


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    RYB002N05 R1010A RYB002N05 PDF

    rzb002p02

    Abstract: vmn3 package vmn3
    Text: 1.2V Drive Pch MOSFET RZB002P02  Structure Silicon P-channel MOSFET  Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37 0.17


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    RZB002P02 R1010A rzb002p02 vmn3 package vmn3 PDF

    vmn3 package

    Abstract: VMN3
    Text: Data Sheet 1.2V Drive Nch MOSFET RUB002N02  Structure Silicon N-channel MOSFET  Dimensions Unit : mm VMN3 0.1 0.22 0.16 (3) 0.1 1.0 0.8 Features 1) High speed switing. 2) Small package(VMN3). 3) Ultra low voltage drive(1.2V drive). (1) (2) 0.37


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    RUB002N02 RUB002N02 Pw10s, R1120A vmn3 package VMN3 PDF

    tsmt3

    Abstract: tumt3 DSASW0034240 vmn3 package T100 T106 T108 T110 T116 T146
    Text: Packaging type Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 A 0.7 1.65 1.65 1.64 C A 1Pin A VMN3 VMT3 EMT5/6 WEMT6 8.0 B B 8.0 4.0 C B 1.1 1.3 1.65 1.65 C 0.46 0.65 0.65 0.72 A 1.8 2.2 2.2


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    R1010A tsmt3 tumt3 DSASW0034240 vmn3 package T100 T106 T108 T110 T116 T146 PDF

    TSMT3

    Abstract: T100 T106 T108 T110 T116 T146 T148 EMT5 TUMT3
    Text: Packaging type Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 8.0 B B 8.0 4.0 1Pin C A A A 0.7 1.65 1.65 1.64 VMN3 VMT3 EMT5/6 WEMT6 C B 1.1 1.3 1.65 1.65 C 0.46 0.65 0.65 0.72 A 1.8 2.2 2.2


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    R0039A TSMT3 T100 T106 T108 T110 T116 T146 T148 EMT5 TUMT3 PDF

    DTC144EE

    Abstract: DTC144EKA DTC144EM DTC144EUA T106 T146 vmn3 DTC144EU
    Text: 100mA / 50V Digital transistors with built-in resistors DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors


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    100mA DTC144EB DTC144EM DTC144EE DTC144EUA DTC144EKA DTC144EB R0039A DTC144EKA T106 T146 vmn3 DTC144EU PDF

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


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    R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114 PDF

    rohm Part No. Explanation

    Abstract: TSMT6 vmt3
    Text: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) 1.2/1.5/1.8 2.5 4 − −


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    100mA) 3500mA O-220FN O-220FM rohm Part No. Explanation TSMT6 vmt3 PDF

    vmn3 package

    Abstract: rohm suffix "N" vmn3 rohm Part No. Explanation UMT3F T100 T106 TUMT6 T110 T116
    Text: Part No. Explanation Transistor Part No. Explanation MOSFET Part No. Explanation <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 Polarity ID Unit: 100mA 035=3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) 1.2/1.5/1.8 2.5 4 ― ― C Low IGSS Type


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    100mA) 0353500mA vmn3 package rohm suffix "N" vmn3 rohm Part No. Explanation UMT3F T100 T106 TUMT6 T110 T116 PDF

    UMT3F

    Abstract: vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110
    Text: Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) Type of MOSFET 1.2/1.5/1.8 2.5 4 − − C Low IGSS Type


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    100mA) 3500mA R1010A UMT3F vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110 PDF

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


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    R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703 PDF

    DTA144EB

    Abstract: DTA144EE DTA144EKA DTA144EM DTA144EUA T106 T146 VMN3
    Text: -100mA / -50V Digital transistors with built-in resistors DTA144EB / DTA144EM / DTA144EE / DTA144EUA / DTA144EKA zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTA144EB 0.22 0.1 zFeatures 1) Built-in bias resistors enable the configuration of


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    -100mA DTA144EB DTA144EM DTA144EE DTA144EUA DTA144EKA DTA144EB DTA144EM R0039A DTA144EKA T106 T146 VMN3 PDF

    VMN3

    Abstract: DTA114EE DTA114EKA DTA114EM DTA114EUA T106 T146
    Text: 100mA / 50V Digital transistors with built-in resistors DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors


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    100mA DTA114EB DTA114EM DTA114EE DTA114EUA DTA114EKA DTA114EB R0039A VMN3 DTA114EKA T106 T146 PDF

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


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    2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114 PDF

    DTC114EM

    Abstract: DTC114EE DTC114EKA DTC114EUA T106 T146 dtc114EK vmn3 package VMN3
    Text: 100mA / 50V Digital transistors with built-in resistors DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent


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    100mA DTC114EB DTC114EM DTC114EE DTC114EUA DTC114EKA DTC114EB R0039A DTC114EKA T106 T146 dtc114EK vmn3 package VMN3 PDF

    2SB1051K

    Abstract: 750H ST-100S VMN3 TSST8 lpts 2sb1051
    Text: Design Support Document RECOMMENDABLE CONDITION OF SOLDERING SURFACE MOUNTED DEVICE CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING 2/5 RECOMMENDABLE CONDITION OF FLOW SOLDERING


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    R1010A 2SB1051K 750H ST-100S VMN3 TSST8 lpts 2sb1051 PDF

    EMT3F

    Abstract: TSMT3 vmn3 package T100 T106 T108 T110 T116 T146 T148
    Text: Taping specifications Transistor Taping specifications Unit : mm VMT3, EMT5/6 EMT3, UMT3/5/6, TUMT3/5/6, SST3, SMT3/5/6, TSMT3/5/6 4.0 4.0 2.0 8.0 B B 8.0 4.0 1Pin C A A A 1.65 1.65 VMT3 EMT5/6 MPT3 C B 1.3 1.65 C 0.65 0.65 A 1.8 2.2 2.2 3.1 3.1 3.1 EMT3


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    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


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    DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    PSOP

    Abstract: asahiglass 2SB1051K 750H ST-100S vmn3 package pine alpha st-100s arakawa chemical
    Text: E x c e lle n c e in E le c tr o n ic s Tt\ RECOMMENDABLE CONDITION OF SOLDERING RBHffl TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING


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    PSOP

    Abstract: UMT3F TUMT6 2SB1051K 750H ST-100S EMT3F TUMT3 VMN3
    Text: E x c e lle n c e in E le c tr o n ic s Tt\ RECOMMENDABLE CONDITION OF SOLDERING RBHffl TRANSISTOR CONDITION OF SOLDERING FOR SURFACE MOUNTED DEVICE DISCRETE TRANSISTOR LEAD FREE (Sn-3Ag-0.5Cu) VERSION CONTENTS RECOMMENDABLE CONDITION OF REFLOW SOLDERING


    OCR Scan
    PDF