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    VTE1295 Price and Stock

    Excelitas Technologies Corporation

    Excelitas Technologies Corporation VTE1295H

    IR LED CW-PULSD 5.5MW/CM2 NRROW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VTE1295H Bulk 1,220 1
    • 1 $0.41
    • 10 $0.41
    • 100 $0.3875
    • 1000 $0.3875
    • 10000 $0.3875
    		Buy Now
    TME VTE1295H 197 1
    • 1 $0.65
    • 10 $0.542
    • 100 $0.47
    • 1000 $0.47
    • 10000 $0.47
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    VTE1295 Datasheets (2)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    VTE1295 PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF
    VTE1295H Excelitas Technologies Optoelectronics - Infrared, UV, Visible Emitters - IR LED CW-PULSD 5.5MW/CM2 NRROW Original PDF

    VTE1295 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.


    Original     		VTE1295H S3506) PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.


    Original     		VTE1295H S3506) PDF

    VTE1295H

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.


    Original     		VTE1295H S3506) VTE1295H PDF

    VTE1295

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1295 T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.


    Original     		VTE1295 S3506) VTE1295 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 PDF

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 PDF