VTP6060H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP6060H PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low
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VTP6060H
VTP6060H
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low
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VTP6060
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VTP6060
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low
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VTP6060
VTP6060
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VTP6060
Abstract: K350
Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low
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VTP6060
VTP6060
K350
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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VTP6060
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP6060 P A C K A G E D IM E N SIO N S inch mm P R O D U C T D ESC R IP T IO N CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack age. Cathode is common to the case.
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VTP6060
100fc,
IO-13
VTP6060
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Untitled
Abstract: No abstract text available
Text: VTP6060 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE IS Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack age. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of
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VTP6060
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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VTP6061
Abstract: Photodiodes 6061 vactec VTP6060
Text: SbE D • BOBDbD^ DGD1D77 640 H V C T V T P 6 0 6 0 , 6061 VTP Process Photodiodes E C i G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) a 'flat' w indow , dual lead T O -8 pack
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DGD1D77
VTP6060,
T-41-51
VTP6061
Photodiodes 6061 vactec
VTP6060
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Photodiodes 6061 vactec
Abstract: VTP6060 VTP6061 9x10-14 Photodiode vactec
Text: SbE D I VCT BGBObDT DDD1D77 64D V T P 6 0 6 0 , 6061 VTP Process Photodiodes E G 8. G VACTEC T -4 1 -5 1 P AC K AG E DIMENSIONS inch mm PRO D UCT DESCRIPTION CASE 15 TO-8 HERMETIC Large area planar silicon photodiode in CHIP ACTIVE AREA: .032 in2 (20.6 mm2)
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DDD1D77
VTP6060,
T-41-51
VTP6060
VTP6061
3x1012
x1012
Photodiodes 6061 vactec
VTP6060
VTP6061
9x10-14
Photodiode vactec
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