W38NB20
Abstract: st w38nb20 STW38NB20
Text: W38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST W38NB20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.065 Ω 38 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING
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W38NB20
Abstract: STW38NB20 STMicroelectronics 0560
Text: W38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID W38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY
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STW38NB20
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Untitled
Abstract: No abstract text available
Text: W38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID W38NB20 200 V < 0.065 Ω 38 A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s (
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W38NB20
Abstract: STW38NB20 JANUARY1998
Text: W38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID W38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY
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STW38NB20
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