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    WFS MARKING Search Results

    WFS MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    WFS MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BCR 112 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 112 WFs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    Q62702-C2284

    Abstract: No abstract text available
    Text: BCR 112W NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112W WFs 1=B Q62702-C2284 Package 2=E 3=C SOT-323


    Original     		PDF Q62702-C2284 OT-323 Nov-26-1996 Q62702-C2284

    BCR112W

    Abstract: VSO05561 WFs transistor
    Text: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR112W VSO05561 EHA07184 OT323 Jul-16-2001 BCR112W VSO05561 WFs transistor

    Q62702-C2254

    Abstract: No abstract text available
    Text: BCR 112 NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112 WFs 1=B Q62702-C2254 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2254 OT-23 Nov-26-1996 Q62702-C2254

    WFs transistor

    Abstract: VSO05561
    Text: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07184 OT-323 Oct-19-1999 WFs transistor VSO05561

    BCR112W

    Abstract: VSO05561
    Text: BCR112W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR112W VSO05561 EHA07184 OT323 Nov-29-2001 BCR112W VSO05561

    BCR112

    Abstract: No abstract text available
    Text: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR112 VPS05161 EHA07184 Jul-16-2001 BCR112

    BCR112

    Abstract: No abstract text available
    Text: BCR112 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR112 VPS05161 EHA07184 Nov-29-2001 BCR112

    WFs transistor

    Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W

    WFs transistor

    Abstract: WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23

    BCR108W

    Abstract: BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		PDF BCR112. BCR112U: BCR112/F BCR112W EHA07184 BCR112 BCR112F OT323 BCR108W BCR112 BCR112F BCR112U BCR112W BCW66 WFs transistor bcr1 WFs SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		PDF BCR112. BCR112U: BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F

    WFs transistor

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1


    Original     		PDF BCR112. BCR112 BCR112W EHA07184 OT323 dissipationBCR112, BCR112W, 2011-0components WFs transistor

    panasonic film capacitor marking code capacitors

    Abstract: panasonic film capacitor "marking code"
    Text: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type: ECWF S Designed for applications where high current and high frequency are required •Features • Compact • Low-loss and excellent frequency characteristics


    Original     		PDF

    BCR08PN

    Abstract: VPS05604
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604

    Q62702-C2486

    Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
    Text: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation


    Original     		PDF Q62702-C2486 OT-363 Nov-26-1996 transistor digital 47k 22k PNP NPN Marking wfs sot

    WFs transistor

    Abstract: Siemens transistor WFs wfs marking
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23


    OCR Scan     		PDF Q62702-C2254 OT-23 300tis; WFs transistor Siemens transistor WFs wfs marking

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		PDF Q62702-C2254 OT-23 0535b05

    1728640000

    Abstract: 1728540000 1728000000
    Text: Pin headers S2L 3.5/90F Pin headers S2L 3.5/90 ' J & C \ .i wfs!rt*iltu•*'?!tKr '/'Zi' ' *///.• 7 ; ’/ 'w » i’iM tif. Vt ' iff « _ Rated voltage V VDE 100* Rated current (A) 7.5 1> Technical data UL CSA 150 10 50 5 3.5 mm • tin-plated contacts


    OCR Scan     		PDF 5/90F mm70000 1728640000 1728540000 1728000000

    Untitled

    Abstract: No abstract text available
    Text: T H I R D ANGLE P R O J E C T I O N ITEM / \ /l\ A L T E R A T 1O N CODE ECWF2683 // 2753 ( ) n 2 8 2 3 () // 2 9 13 ( ) // 2 10 4 ( ) » 2 114() n 2 12 4 ( ) H 2 1 3 4 () // 2 15 4 ( ) // 2 16 4 ( ) // 2 18 4 ( ) u 2204 ( ) // 2224 ( ) // 2244 ( ) n 2274 ( )


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: D RAW ING M A D E IN T H IR D A N G L E PR O JEC TIO N TH IS DRAW ING IS U N P U B L I S H E D . c C o p y r i g h t RESERVED. 19 AMP PRODUCTS MAY R E L E A S E D FOR PU BLIC A TIO N by AMP BE COVERED In co rp o ra te d , BY U.S. H a r r is b u r g , AND


    OCR Scan     		PDF DIST17 QG-C-576)

    SOT-363 fg

    Abstract: WFs transistor
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2ki2, R2=47k£2) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2486 BCR08PN SOT-363 fg WFs transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		PDF Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4