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    XXXXW Datasheets Context Search

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    Ultrasonic cleaner

    Abstract: GUNS traco power Traco Electronic AG 1000cfm
    Text: Traco Electronic AG Jenatschstrasse 1 CH-8002 Zürich Switzerland Tel: Fax: Email: URL: +41 43 311 4545 +41 43 311 4545 [email protected] www.tracopower.com TON 15-xxxx and TON 15-xxxxWI Cleaning and Drying I. Cleaning Agents Cleaning Method Ultrasonic Wave


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    PDF CH-8002 15-xxxx 15-xxxxWI 1000cfm 1500cfm Ultrasonic cleaner GUNS traco power Traco Electronic AG

    Untitled

    Abstract: No abstract text available
    Text: XXX COLOR 001 BLACK HALOGEN FREE 88134-XXXX-TRP W01 BLACK 88134-XXXXW-TRP CKT Dim A 10 2.0 14 3.0 16 3.5 20 4.5 24 5.5 30 7.0 34 8.0 36 8.5 40 9.5 50 12.0 60 14.5 70 17.0 80 19.5 PACKING Dim B 7.1 8.1 8.6 9.6 10.6 12.1 13.1 13.6 14.6 17.1 19.6 22.1 24.6 Dim C


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    PDF 88134-XXXX-TRP 88134-XXXXW-TRP

    M24C01

    Abstract: M24C02 M24C04 M24C08 M24C16 STMicroelectronics marking code date M24C02 MLP8 2x3mm
    Text: M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Wire I2C Serial Interface Supports 400kHz Protocol Single Supply Voltage: – 4.5 to 5.5V for M24Cxx


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    PDF M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, 400kHz M24Cxx M24Cxx-W M24Cxx-R M24C01 M24C02 M24C04 M24C08 M24C16 STMicroelectronics marking code date M24C02 MLP8 2x3mm

    OAOLP2

    Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
    Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.


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    PDF 15consecutive OAOLP2 temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645

    M24Cxx-Lxx6

    Abstract: M24Cxx M24C01 M24C02 M24C04 M24C08 M24C16 F6SP36
    Text: M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I²C Bus EEPROM FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ Figure 1. Packages Single Supply Voltage: – 4.5V to 5.5V for M24Cxx – 2.5V to 5.5V for M24Cxx-W


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    PDF M24C16, M24C08 M24C04, M24C02, M24C01 16Kbit, M24Cxx M24Cxx-W M24Cxx-L M24Cxx-R M24Cxx-Lxx6 M24Cxx M24C01 M24C02 M24C04 M24C08 M24C16 F6SP36

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    Abstract: CSD25301W1015
    Text: P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features • Ultra Low Qg & Qgd D D • Small Footprint S S • RoHS Compliant nC 0.32 nC VGS= -1.5V 175 mΩ VGS=-2.5V 80 mΩ VGS=-4.5V 62 mΩ Vth Top View Level Package V 2.0 RDS on


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    PDF CSD25301W1015 xxxxww CSD25301W1015

    CP2101SETIDS

    Abstract: AN144SW AN144 AN-144 Silabs CP2101
    Text: AN144 CP2101 C U S T O M I Z A T I O N G U I D E Relevant Devices This application note applies to the following devices: CP2101 1. Introduction This document is intended for developers creating products based on the CP2101 USB to UART Bridge Controller. It provides information about obtaining a Vendor ID VID and Product ID (PID) for a CP2101 product. It also


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    PDF AN144 CP2101 CP2101 CP2101SETIDS AN144SW AN144 AN-144 Silabs

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    Abstract: 13873
    Text: SHEET 1 OF 1 9 .9 0 + 0 .2 w m xxxxw j RECOMMENDED P.C.B. lAYOU -2 .5 4 TYP. 6 8 BACK VIEW 10 12 14 16 18 20 21 22 •, 9. •, 9, J J J J J11J13*J15J J J21*JJ l 9 3* 5 * 7* 9* • • Î7 * £\3* CIRCUIT NOTES: 1. ALL DIMENSIONS IN MM 2. GENERAL TOLERANCE: X .X = ± 0 .4


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    PDF J11J13* 24VDC. 10OMEGA--OHMS 500VDC 100mA 1000GF xxxxw 13873

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    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed


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    PDF Am27X800 8-Bit/524 16-Bit) KS000010 7347A-9 xxxxw

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


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    PDF Am28F020A 32-Pin 14jis.

    Untitled

    Abstract: No abstract text available
    Text: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, FLOW-THROUGH OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT i :$*&&* 4« *»»« tK fc « * 'S * * * * ; 4ÎK «« ^ iL j; PRELIMINARY IDT71V2577 IDT71V2579 IDT71V3577 IDT71V3579 FE A TU R E S :


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    PDF IDT71V2577 IDT71V2579 IDT71V3577 IDT71V3579 IDT71 Vx577/579 -544-SRAM

    HM534251BZ-8

    Abstract: No abstract text available
    Text: HM534251B Series 262144-word x 4-bit Multiport CMOS Video RAM HITACHI Description The HM534251B is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM and SAM operate independently and


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    PDF HM534251B 262144-word 256-kword 512-word ns/70 ns/80 ns/100 HM534251BZ-8

    1D1010

    Abstract: 1D10101
    Text: FINAL COM’L: -10/12/15/20 IND: -14/18/24 Z I Advanced Micro Devices M A C H 2 2 0 - 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ 10 ns tpD


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    PDF PAL26V12â 100MHzfcNT MACH120 MACH221 MACH220 PAL22V10 MACH220-10/12/15/20 68-Pin 16-038-SQ 1D1010 1D10101

    Untitled

    Abstract: No abstract text available
    Text: m EDI9F33256C a l256Kx32 SRAM Module fiEC W O U C 0E96N& NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


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    PDF 0E96N& EDI9F33256C l256Kx32 256Kx32 EDI9F33256C 256Kx4 F33256C

    Untitled

    Abstract: No abstract text available
    Text: APPLICABLE FPC RECOMMENDED DIM. THICKNESS: 0 .3 ± 0 ^ 3 88513-X X X X-XX A±o.i □ (BLANK) 10 20 30 W01 W02 WO3 1 . 0 ± 0.05 0.2 Circuit No.1 i \ TT'TI'I HOUSING M M ACTUATOR / LOGO MARK r il/ 7. NO OF CKT- y t PACKING-0: TAPE Sc REEL


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    PDF 88513-X 88241-XXXX-TRP 88241-XXXX1-TRP 88241-XXXX-W02-TRP 88241-XXXX-U2-TRP 100-200uâ

    79C970A

    Abstract: AMD 79c97* lance
    Text: P R E L IM IN A R Y Am79C970A PCnet -PCI II Single-Chip Full-Duplex Ethernet Controller for PCI Local Bus Product Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Supports ISO 8802-3 IEEE/ANSI 802.3 and Ethernet standards Microwire EEPROM interface supports


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    PDF Am79C970A 32-bit 038-P 79C970A PQT144 79C970A AMD 79c97* lance

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    Abstract: No abstract text available
    Text: £D HARRIS H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM June 1989 Features D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. The H M -6 564 2/88 3 is a CMOS 8192 x 8 -b it Static


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    PDF 80C86 80C88 HM-65642 xxxxw

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    Abstract: No abstract text available
    Text: COM’L PAL16RA8 Advanced Micro Devices 20-pin Asynchronous TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 30 ns maxim um propagation delay and 20 MHz TTL-level register preload for testability f MAX Easy design w ith PA LA SM software ■


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    PDF PAL16RA8 20-pin PAL16RA8 10232-01OA xxxxw

    5650300

    Abstract: XXXW
    Text: QED RISCMark RM5231™ 64-Bit Superscalar Microprocessor FEATURES: • Pinout com p atib le w ith po pu lar R M 5230 w ith split po w e r s u p ­ plies 2.5V and 3.3V • Dual Issue su p e rsca la r m icro p ro ce sso r - can issue one integer and one floa ting -point in stru ction pe r cycle


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    PDF RM5231TM 64-Bit DS-5231, 5650300 XXXW

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    Abstract: No abstract text available
    Text: MOTOROLA O rder th is docum ent by MCM67J618A/D SEMICONDUCTOR TECHNICAL DATA MCM67J618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The M CM67J618A is a 1,179,648 bit synchronous static random access


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    PDF MCM67J618A/D MCM67J618A CM67J618A i486TM 1ATX31758-0 xxxxw

    EF802

    Abstract: pf30n Nec mr31
    Text: Preliminary Data Sheet March 1998 microelectronics group Lucent Technologies Bell Labs Innovations LU3X54FT QUAD-FET Fast Ethernet Transceiver for 10Base-T/100Base-TX/FX Features 100 Mbits/s FX Transceiver 10 Mbits/s Transceiver • Compatible with /EEE802.3U 100Base-FX stan­


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    PDF LU3X54FT 10Base-T/100Base-TX/FX 10Base-T /EEE802 100Base-FX DS98-132LAN DS98-038LAN) EF802 pf30n Nec mr31

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The /¿PD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


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    PDF 32K-WORD 36-BIT uPD431636L 768-word PD431636L

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    Abstract: xxxxw DS5230 RM5230 MIPS RM5230
    Text: QED RISCMark RM5230™ 64-Bit Superscalar Microprocessor FEATURES: • Dual Issue superscalar microprocessor - can issue one integer and one floating-point instruction per cycle — 100, 133, 150 and 175 MHz operating frequencies — 228 Dhrystone2.1 MIPS


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    PDF RM5230TM 64-Bit SPECInt95 SPECfp95 32-bit DS-5230, xxxw xxxxw DS5230 RM5230 MIPS RM5230

    Untitled

    Abstract: No abstract text available
    Text: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


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    PDF Am28F010 32-Pin