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    YG861S12 Search Results

    YG861S12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YG861S12R Fuji Electric DIODE SCHOTTKY 120V 5A 3TO-220F Original PDF

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    YG861S12R

    Abstract: No abstract text available
    Text: YG861S12R 5A High Voltage Schottky barrier diode (120V / 5A ) [0401] Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 2.7±0.2 1 2 1.2±0.2 13Min 3.7±0.2 Characteristics YG861S12R Units Condition VRRM 120 V VF 0.88 V Tc=25°C Tc=25


    Original     		PDF YG861S12R 13Min YG861S12R O-220F

    YG861S12

    Abstract: YG861S12R
    Text: YG861S12R 5A (120V / 5A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics V V 5 A IO 2 3 1.2±0.2 +0.2 -0 0.7±0.2 0.6 2.54±0.2 2.7±0.2 Applications Features Low VF High Voltage Center tap connection


    Original     		PDF YG861S12R 13Min YG861S12R O-220F YG861S12

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28