Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS FOR REFOND SURFACE MOUNT LED Model: RF-YURA30TS-AD Company Name: Confirmed By Customer: DATE: Feature ◆ ◆ ◆ ◆ Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible
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RF-YURA30TS-AD
008inch)
WI--E--045
Y05003
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NR3015
Abstract: AN-1419 LM3202 NR3015T3R3M CRCW04020R00F
Text: National Semiconductor Application Note 1419 Haruhiko Yura January 2006 Introduction The LM3202 offers superior performance for mobile phones and similar RFPA applications. Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the
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LM3202
CSP-9-111S2)
CSP-9-111S2.
AN-1419
NR3015
AN-1419
NR3015T3R3M
CRCW04020R00F
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Untitled
Abstract: No abstract text available
Text: TOP LED, 3528, Yellow Feature ◆ ◆ ◆ ◆ CC-YURA3528TS-AE Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm RoHS compliant lead-free soldering compatible Package Outline 2 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING
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CC-YURA3528TS-AE
008inch)
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Untitled
Abstract: No abstract text available
Text: TOP LED, 3528, Yellow High Output Reverse Polarity Chip Feature ◆ ◆ ◆ ◆ CC-YURA3528TS-AG-FY Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm RoHS compliant lead-free soldering compatible Package Outline 2 1 ATTENTION
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CC-YURA3528TS-AG-FY
008inch)
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RF-YURA30TS-AE
Abstract: JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106
Text: Feature ◆ ◆ ◆ ◆ P/N: RF-YURA30TS-AE Viewing angle:120 deg The materials of the LED dice is ALGaInP 3.50mmx2.80mm×1.90mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline 2 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC
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RF-YURA30TS-AE
008inch)
WI-E-045
RF-YURA30TS-AE
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
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NR3015
Abstract: transistor a 1413 AN-1413 LM3205
Text: National Semiconductor Application Note 1413 Haruhiko Yura January 2006 Introduction The LM3205 offers superior performance for mobile phones and similar RFPA applications. Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the
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LM3205
CSP-9-111S2)
CSP-9-111S2.
AN-1413
NR3015
transistor a 1413
AN-1413
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litton
Abstract: litton ac6023 Litton Precision Products ac6023 bax 50
Text: AC6023 Kompakte Schleifring-Kapsel in vielfältigen Ausführungen ● ● ● ● ● ● ● Schnell lieferbare StandardAusführung Geeignet zur Übertragung von hohen digitalen Datenraten, analogen Signalen und elektrischen Leistungen Ringe und Bürsten vergoldet
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AC6023
CH-8050
F-78151
litton
litton ac6023
Litton Precision Products
ac6023
bax 50
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29lv160
Abstract: 29lv160 Flash
Text: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time
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HY29LV160
p3-61400755
S-128
29lv160
29lv160 Flash
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HY29F800TT-90
Abstract: hy29f800tt HY29F800 PSOP44 29F800 code
Text: HY29F800 8 Megabit 1M x 8/512K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800
8/512K
S-128
HY29F800TT-90
hy29f800tt
HY29F800
PSOP44
29F800 code
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bit 3501 Architecture
Abstract: HY29DS162 HY29DS163 D6547
Text: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS162/HY29DS163
bit 3501 Architecture
HY29DS162
HY29DS163
D6547
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29F080
Abstract: HY29F080T90 1N3064 HY29F080 PSOP44 7915 full pack hyundai tv hy 22 f circuit 3611-1
Text: HY29F080 Series 8 Megabit 1M x 8 , 5-volt Only, Flash Memory KEY FEATURES n 5-Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as low as 55 ns n Low Power Consumption – 15 mA typical active read current
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HY29F080
S-128
HY29F080
29F080
HY29F080T90
1N3064
PSOP44
7915 full pack
hyundai tv hy 22 f circuit
3611-1
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FR4 epoxy glass 1.6mm substrate
Abstract: FR4 1.6mm substrate on 5295 transistor AN-996 SMD10 IRG4Z the calculation of the power dissipation for the IGBT IGBT heatsink cleaning FR4 substrate 1.6mm
Text: AN-996 v.Int Guidelines for the Assembly of SMD10 Devices Introduction This application note gives details of thermal characteristics and mounting considerations for the SMD10 surface mount package from International Rectifier. With a proven track record for mounting on IMS board in International Rectifiers’
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AN-996
SMD10
FR4 epoxy glass 1.6mm substrate
FR4 1.6mm substrate
on 5295 transistor
AN-996
IRG4Z
the calculation of the power dissipation for the IGBT
IGBT heatsink cleaning
FR4 substrate 1.6mm
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Hyundai central locking
Abstract: bit 3501 Architecture HY29DL162 HY29DL163
Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
Hyundai central locking
bit 3501 Architecture
HY29DL162
HY29DL163
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PDF
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mobile hardware integration
Abstract: i.MX 6 ARM11 ARM1136JF-S H.264 codec
Text: Multimedia Applications Processors i.MX Family devices, smartphones, mobile gaming consoles, GPS devices and portable media players featuring robust video and multimedia capabilities. The i.MX21 multimedia applications processor provides an exceptional video experience via
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MX31L
mobile hardware integration
i.MX 6
ARM11
ARM1136JF-S
H.264 codec
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Untitled
Abstract: No abstract text available
Text: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG
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OCR Scan
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16-bit
32200S-60/-70/-80
361120GS-60/-70/-80
36-bit
94500S/L-60/-70/-80
B166-H6574-X-X-7600
B166-H6657-X-X-7600
B166-H6657-G1-X-7600
B192-H6641-X3-X-7400
B166-B6336-X-X-7600
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 6 2Q F 168 04 A S eries 512K X 16b¡t fu ll CM O S SRAM Preliminary DESCRIPTION FEATURES T h e H Y 6 2 Q F 1 6 8 0 4 A is a high speed, super low pow er and 8M bit full C M O S S R A M organized as 5 2 4 ,2 8 8 words by 16bits. T h e H Y 6 2 Q F 1 6 8 0 4 A
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16bits.
F16804A
16bit
F6804A
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enb 801 varistor
Abstract: varistor ENB ENB461 capacitor ENB401D-05A ENB461 ENB461M-03A ENB251 FUJI ENB221 enb221 ENB401D-10A
Text: COLLMER SEMICONDUCTOR INC F U J 7M DE I SSBflTTS 0DD07S0 3 È~'T " ft " ¿>2 I Ceramic Surge Absorber Z-TRAP/ENB Series x FUJI Z-TRAP ENB SERIES Transient Suppressors • General description FUJI'S new line of ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors
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0DD0750
10mADC
J22331,
J26374
1985-8/15B
enb 801 varistor
varistor ENB
ENB461 capacitor
ENB401D-05A
ENB461
ENB461M-03A
ENB251
FUJI ENB221
enb221
ENB401D-10A
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dvb t receiver circuit diagram
Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram
Text: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital
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HDM85
HDM8511P
HDM8500
H2-04
LP901
dvb t receiver circuit diagram
Hyundai DBS
raised cosine
Hyundai DVB
Single Chip L-band Tuner DVB Satellite
LP-901
dvb circuit diagram
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PDF
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TPC 8406
Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
Text: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast
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HY51C1000
M131202A-SEP90
HY51C1000
576X1
002-A
K29793/4
K23955/6
TPC 8406
HY51C1000-12
HY51C1000-10
RM1410
W777777
29793
83464
hyundai chip id
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PDF
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yura
Abstract: No abstract text available
Text: h ~7 > V X $ /Transisto rs 2SA1760 2SA1760 E . m m 7 U - + M PNP > U 3 > h 7 > y 3. $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching Strobo Flash, Power Supply Switching of Telephone • ^fJKrt'jisEI/'Dimensions (Unit : mm) &>& O 1)
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2SA1760
--20mA/--
--100mA)
--400V
--20mA/--2mA)
100mA)
yura
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current
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OCR Scan
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HY29F080
S-128
HY29F080
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PDF
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Untitled
Abstract: No abstract text available
Text: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast
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M131202A
HY51C1000
576X1
K29793/4
K23955/6
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PDF
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Pulse Transformer ZKB
Abstract: siemens transformer Pulse Transformer VAC ZKB TRANSISTOR SMD MARKING CODE 1P 702 Z smd TRANSISTOR zkb 416 TRANSISTOR SMD MARKING CODE 702 zkb* vac smd transistor n48 vac zkb
Text: SIEM ENS Digital Terminal ICs sv o ^ s SX * * * * S ICs for Communications Power Controller PSB 2120 PSB 2121 Data Sheets 12.92 "*• 0 3 1 3 4 PSB 2120; PSB 2121 Revision History: Original Version 12.92 Previous Releases: Page Subjects changes since last revision
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B115-H6622-X-X-7600
Pulse Transformer ZKB
siemens transformer
Pulse Transformer VAC ZKB
TRANSISTOR SMD MARKING CODE 1P
702 Z smd TRANSISTOR
zkb 416
TRANSISTOR SMD MARKING CODE 702
zkb* vac
smd transistor n48
vac zkb
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