16F5
Abstract: 4c1m16
Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh
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16E0-60)
ZDDQ15
ZDDQ11
ZDDQ10
A54C1M16FS
42-pin
-60JC
AS4C1M16F5-50JC
AS4C1M16F5
16F5
4c1m16
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MT4C16270DJ-7
Abstract: No abstract text available
Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16270
512-cycle
MT4C16270DJ-7
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C1204B
Abstract: t2g memory
Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BJ
16Bit
C1204B
t2g memory
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16v1204
Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1204BJ
1Mx16Bit
1Mx16
Q323tÃ
5CK44
-TSOP2-400R
825-oocÂ
35-q1q
003b2b0
16v1204
C1204B
KM416V1204BJ
74142
74142 NOTE
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C1204B
Abstract: No abstract text available
Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BT
16Bit
1Mx16
03042b
C1204B
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Untitled
Abstract: No abstract text available
Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
KM416V256DJ
0G322tM
QG322bS
7Tb4142
00322bfci
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