sc6202
Abstract: SC-6202 ZENER DIODE 2A MARKING DL 2SD2167 T100
Text: 2SD2167 Power Transistor 31±4V, 2A 2SD2167 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due
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2SD2167
40x40x0
SC-62
/50mA
30MHz
sc6202
SC-6202
ZENER DIODE 2A
MARKING DL
2SD2167
T100
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2A 5v ZENER DIODE
Abstract: 2sd2170 T100 marking DM zener diode transistor collector diode protection SC-62 EIAJ
Text: 2SD2170 Transistors_ Medium Power Transistor Motor, Relay drive (903, 2A) 2SD2170 •Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to
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2SD2170
SC-62
30MHz
2A 5v ZENER DIODE
2sd2170
T100
marking DM zener diode
transistor collector diode protection
SC-62 EIAJ
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2SC5060
Abstract: 2SC5060 equivalent transistor 2sc5060 2sg50
Text: 2SC5060 Transistor, NPN, Darlington Features Dimensions Units : mm • • • • • • available in ATV TV 2 package built-in 90 ±10 V Zener diode between collector and base low Zener voltage fluctuation highly resistant to surge damper diode incorporated
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2SC5060
2SG5060
2SC5060
2SC5060 equivalent
transistor 2sc5060
2sg50
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in5349b
Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Text: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C
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1N5333B
1N5388B
in5349b
IN5339B
IN5378B
IN5343b
in5364B
in5378b ZENER DIODE
IN5358B
IN5378
IN5339B diode
IN5357B
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2SD2010
Abstract: No abstract text available
Text: 2SD2010 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • built-in 60 V Zener diode between collector and base • resistant to surges • damper diode incorporated j_o • built-in resistors between base and emitter
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2SD2010
2SD2010,
2SD2010
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2SC5576
Abstract: No abstract text available
Text: 2SC5576 Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to
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2SC5576
100ms
30MHz
2SC5576
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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zener diode c 531
Abstract: 20kv diode 6N diode zener diode array IEC1000-4-2 zener diode 531 2.5kV ZENER DIODE
Text: STZ5.6N Diodes_ Zener Diode Array STZ5.6N •Applications Constant voltage control For the ESD measure of a signal line •External dimensions Units : mm •Features 1) Designed for mounting on small surface areas 2) High reliability
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SC-59
200pFÂ
150pF
zener diode c 531
20kv diode
6N diode
zener diode array
IEC1000-4-2
zener diode 531
2.5kV ZENER DIODE
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marking lt
Abstract: 2SD2028 IC 2803
Text: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage
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2SD2028
2SD2028-applied
marking lt
IC 2803
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2SD1866
Abstract: 2SD2143 2SD2212 2SD2397 T100
Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60+1OV, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"
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2SD2212
2SD2143
2SD1866
2SD2397
2SD221212SD214312SD186612SD2397
2SD2212
2SD1866
O-22QFN
2SD2397
T100
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Untitled
Abstract: No abstract text available
Text: ATEI HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) • Optional Zener Diode output (additional protection against inductive
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HDR2606
16-bit
16-bit)
MIL-STD-883
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Pulsating
Abstract: 1H5011 2SD412 amplifier 2606 LSE B3 transformer natel engineering 15-V 74LS138 74LS163 HDR2606-14S
Text: ATEL HDR2606 2 VA Output, Microprocessor Compatible 16-bit Digital-to-Resolver Converter Features ¿¿*55 • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) ôri3 006391 tM • Optional Zener Diode output
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HDR2606
16-bit
16-bit)
MIL-STD-883B
395/USA/single
HDR2606-14S)
Pulsating
1H5011
2SD412
amplifier 2606
LSE B3 transformer
natel engineering
15-V
74LS138
74LS163
HDR2606-14S
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2SD1701
Abstract: PA33
Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1701 The 2SD1701 is NPN silicon epitaxial darlington transistor designed fo r pulse m otor driver, printer driver, solenoid driver. FEATURES • High DC Current gain. • Zener Diode between Collector and Base fo r Absorbing
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2SD1701
2SD1701
PA33
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diode zener c25
Abstract: IGBT FF 300
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
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OT223)
MMG05N60D
318E-04
0E-05
0E-04
4-T19
diode zener c25
IGBT FF 300
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ic 2028
Abstract: 2028b IC 2803
Text: ¡^Ordering num ber: EN 2803 2SD2028 No.2803 NPN Epitaxial P lana r Silicon T ransistor Low-Frequency Power Amp A pplications F eatures • With Zener diode 11 ± 3V between collector and base •Large cu rren t capacity ■Low collector to em itter satu ra tio n voltage
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2SD2028
2SD2028-applied
2SD2028
44-fiJS
D148MO
ic 2028
2028b
IC 2803
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability
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2SD2176
250mm2
7149MO
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SD2263-Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92 1 • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Table 1 Absolute M aximum Ratings (Ta = 25°C) Item Symbol Rating
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2SD2263-------------Silicon
2SD2263
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Collector to base voltage
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2SD1976
-220A
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline T O -2 2 0 A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating
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2SD1976
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD1976
-220AB
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DARLINGTON TRANSISTOR ARRAYS 2A
Abstract: PU4422 PU3122 PU4122
Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B
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PU3122,
PU4122,
PU4422
200mJ
PU3122:
PU4122:
DARLINGTON TRANSISTOR ARRAYS 2A
PU4422
PU3122
PU4122
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low -frequency am plification Unit: mm 4 . 5+ 0.1 • Features • • • • High foward current transfer ratio hpe. 60V zener diode built in between collector and base. Darlington connection.
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2SD2416
-50mA,
200MHz
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2SC4674
Abstract: No abstract text available
Text: 2SD2170 2SC4574 Transistors I Medium Power Transistor Motor or Relay drive 2SD 2170 •F e a tu re s 1) 2) 3) 4) 5) 6) •A b s o lu te maximum ratings (T a = 2 5 ”C ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.
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2SD2170
2SC4574
94L-686-D
2SC4674
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